Micro-LED transfer methods using light-based debonding

Patent metadata

Field	Value
Publication number	US-10985046-B2
Application number	US-201916520674-A
Country	US
Kind code	B2
Filing date	Jul 24, 2019
Priority date	Jun 22, 2018
Publication date	Apr 20, 2021
Grant date	Apr 20, 2021

Abstract

Transfer methods disclosed herein include transferring micro-LEDs from a first carrier to a second carrier. The methods include bonding the micro-LEDs to the first carrier using a first releasable bonding layer that releases when exposed to actinic light. The micro-LEDs are then secured to a second carrier. The first bonding layer is then irradiated through the first releasable bonding layer through the first carrier with the actinic light to release the micro-LEDs from the first carrier. The second carrier can be a display backplane having bonding pads and the micro-LEDs can be secured to the bonding pads.

First claim

What is claimed is:

1. A method of transferring a device from a first carrier to a second carrier, comprising:
a) bonding the device to the first carrier using a first releasable bonding layer that releases when exposed to actinic light;
b) securing the device to the second carrier using a second releasable bonding layer that releases when exposed to actinic light; and
c) irradiating the first releasable bonding layer through the first carrier with the actinic light to release the device from the first carrier.

2. The method according to claim 1 , wherein the act of irradiating comprises scanning the actinic light over the releasable bonding layer.

3. The method according to claim 1 , wherein the device comprises a micro-LED and the method further comprises transferring the micro-LED from a donor wafer to the first carrier prior to the act of securing the micro-LED to the second carrier.

4. The method according to claim 1 , wherein the first releasable bonding layer includes a release material and an adhesive material, wherein the release material is deposited onto a surface of the first carrier and the adhesive material is deposited onto a surface of the device, the method further comprising:
forming the first releasable bonding layer by contacting the release material of the first carrier to the adhesive material of the device.

5. The method according to claim 1 , wherein the device comprises a micro-LED and the second carrier comprises a display backplane having a bonding pad, the method further comprising:
transferring the micro-LED from the first carrier to the bonding pad; and
operably securing the transferred micro-LED to the bonding pad.

6. The method according to claim 1 , wherein the act b) of securing the device to the second carrier is performed prior to the act a) of bonding the device to the first carrier.

7. The method according to claim 6 , further comprising after releasing the device from the first carrier:
transferring the device from the second carrier to a bonding pad on a display backplane by irradiating the second releasable bonding layer through the second carrier to release the device from the second carrier; and
operably bonding the device to the bonding pad.

8. A method of transferring one or more of multiple micro-LEDs from a first carrier to a second carrier, comprising:
a) bonding the multiple micro-LEDs to the first carrier using respective first releasable bonding segments that release when exposed to actinic light;
b) securing the multiple micro-LEDs to the second carrier;
c) irradiating one or more of the first releasable bonding segments through the first carrier with the actinic light to release one or more of the multiple micro-LEDs from the first carrier; and
d) selectively releasing the other of the one or more multiple micro-LEDs from the second carrier so that only said one or more of the multiple micro-LEDs are supported only by the second carrier and so that only said other of the one or more multiple micro-LEDs is supported by the first carrier.

9. The method according to claim 8 , wherein the act c) of irradiating the one or more first releasable bonding segments comprises sequentially scanning the actinic light over each of the one or more first releasable bonding segments.

10. The method according to claim 8 , further comprising prior to act a):
transferring the multiple micro-LEDs from a donor wafer to the first carrier.

11. The method according to claim 10 , further comprising forming the first releasable bonding segments by:
depositing a release material onto a surface of the first carrier as a first layer;
depositing an adhesive material onto a surface of the micro-LED as a second layer;
contacting the first and second layers to form a first releasable bonding layer; and
patterning the first releasable bonding layer to define the first releasable bonding segments.

12. The method according to claim 8 , wherein the multiple micro-LEDs are secured to the second carrier using respective second releasable bonding segments that release when exposed to actinic light, the method further comprising:
transferring the micro-LEDs from the second carrier to respective one or more bonding pads on a display backplane by irradiating the second releasable bonding segments of the one or more micro-LEDs through the second carrier with actinic light to release the micro-LEDs from the second carrier; and
operably bonding the one or more transferred micro-LEDs to their respective one or more bonding pads.

13. The method according to claim 8 , further comprising:
transferring the micro-LEDs from the first carrier to respective one or more bonding pads on a display backplane by irradiating the first releasable bonding segments that hold the micro-LEDs of the first carrier through the first carrier with actinic light to release the micro-LEDs from the first carrier.

14. The method according to claim 13 , further comprising:
operably bonding the one or more transferred micro-LEDs to their respective one or more bonding pads using a thermal process.

15. The method according to claim 8 , wherein the act of securing the micro-LEDs to the second carrier forms a micro-LED carrier structure, and further comprising:
supporting the micro-LED carrier structure on a support stage of an irradiation apparatus that generates the actinic light so that either of the first or second carrier is in contact with the support stage;
performing either the act c) or the act d) on the micro-LED carrier structure using the irradiation apparatus; and
flipping over the micro-LED carrier structure so that the other of the first and second carrier is in contact with the support stage and performing the other of the act c) or the act d) using the irradiation apparatus.

16. A method of transferring one or more of multiple micro-LEDs from a first carrier to a second carrier, comprising:
a) bonding the multiple micro-LEDs to the first carrier using a layer of a releasable bonding material that releases when exposed to actinic light;
b) securing select micro-LEDs of the multiple micro-LEDs to the second carrier using respective segments of the releasable bonding material; and
c) irradiating the first releasable bonding layer through the first carrier with the actinic light to release the select multiple micro-LEDs from the first carrier so that the select micro-LEDs are supported on the second carrier by the respective segments of the releasable bonding material.

17. The method according to claim 16 , further comprising prior to act a):
transferring the multiple micro-LEDs from a donor wafer to the first carrier.

18. The method according to claim 17 , wherein the act of transferring the multiple micro-LEDs from a donor wafer to the first carrier includes a mechanical lift-off operation, a laser lift-off operation, or use of a wet etch.

19. The method according to claim 17 , further comprising forming a support layer on the donor wafer.

20. The method according to claim 19 , wherein the support layer is configured for at least one of (1) use for the laser lift-off operation, (2) use as a hard mask, or (3) to flatten the donor wafer.

21. The method according to claim 20 , wherein a stress of the support layer is controlled during application of the support layer to the donor wafer to flatten the donor wafer.

22. The method according to claim 16 , wherein the second carrier includes mesas, the respective segments of the releasable bonding material

Assignees

• Veeco Instr Inc

Inventors

• Paranjpe Ajit P
• Morath Christopher J

Classifications

• H10P72/7448

  the bond interface between the auxiliary support and the wafer comprising two or more, e.g. multilayer adhesive or adhesive and release layer · CPC title

• H10W72/0198

  batch processes · CPC title

• H10W90/00

  Package configurations · CPC title

• H10W72/072

  of bump connectors · CPC title

• H10W72/073

  of die-attach connectors · CPC title