Method of manufacturing semiconductor device and non-transitory computer-readable recording medium

Patent metadata

Field	Value
Publication number	US-10985017-B2
Application number	US-201916285881-A
Country	US
Kind code	B2
Filing date	Feb 26, 2019
Priority date	Mar 27, 2018
Publication date	Apr 20, 2021
Grant date	Apr 20, 2021

Abstract

Described herein is a technique capable of improving a quality of a substrate processing performed using hydrogen peroxide. According to one aspect of the technique described herein, there is provided a method of manufacturing a semiconductor device including: (a) supplying a first process gas containing water and a first concentration of hydrogen peroxide to a substrate having a silicon-containing film formed on a surface thereof; and (b) supplying a second process gas containing water and a second concentration of hydrogen peroxide higher than the first concentration to the substrate after (a).

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, comprising:
(a) supplying a first process gas containing water and a first concentration of hydrogen peroxide to a substrate having a silicon-containing film formed on a surface thereof; and
(b) supplying a second process gas containing water and a second concentration of hydrogen peroxide higher than the first concentration to the substrate after (a).

2. The method of claim 1 , wherein the silicon-containing film is oxidized in (a) and the silicon-containing film oxidized in (a) is further oxidized in (b).

3. The method of claim 1 , wherein impurities contained in the silicon-containing film are removed in (a) and (b).

4. The method of claim 1 , wherein the silicon-containing film comprises a silicon oxide film containing impurities.

5. The method of claim 3 , wherein the impurities comprise at least one of hydrogen and nitrogen.

6. The method of claim 3 , wherein the silicon-containing film comprises a film containing a silazane bond.

7. The method of claim 6 , wherein nitrogen contained in the silicon-containing film is removed in (a) and (b).

8. The method of claim 1 , wherein the first process gas comprises water vapor free of hydrogen peroxide.

9. The method of claim 1 , wherein the first process gas comprises water vapor free of hydrogen peroxide, and a temperature of the wafer is within a range from 250° C. to 600° C. in (a).

10. The method of claim 9 , wherein the temperature of the wafer is within a range from 400° C. to 600° C. in (a).

11. The method of claim 1 , wherein the first process gas contains water and hydrogen peroxide, and the temperature of the wafer is within a range from 80° C. to 250° C. in (a).

12. The method of claim 1 , wherein the first process gas is continuously supplied for a first time duration in (a), and the second process gas is continuously supplied for a second time duration in (b).

13. The method of claim 12 , wherein the first process gas is continued to be supplied until the water permeates into the silicon-containing film throughout an entire region in a thickness direction of the silicon-containing film in (a).

14. The method of claim 1 , further comprising:
(c) supplying a gas containing water and hydrogen peroxide to the substrate between (a) and (b) while continuously increasing a concentration of hydrogen peroxide contained in the gas.

15. A non-transitory computer-readable recording medium storing a program used for a substrate processing apparatus, wherein the program causes the substrate processing apparatus to perform:
(a) supplying a first process gas containing water and a first concentration of hydrogen peroxide to a substrate having a silicon-containing film formed on a surface thereof in a process chamber of the substrate processing apparatus; and
(b) supplying a second process gas containing water and a second concentration of hydrogen peroxide higher than the first concentration to the substrate after (a).

Assignees

• Kokusai Electric Corp

Inventors

• Yamamoto Katsuhiko
• Joda Takuya
• Kakuda Toru
• Horii Sadayoshi

Classifications

• H10P14/69215 Primary

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6304

  Formation by oxidation, e.g. oxidation of the substrate · CPC title

• H10P14/6519

  the substance being oxygen · CPC title

• H10P14/6529 Primary

  by exposure to a gas or vapour · CPC title

• H10P14/6334 Primary

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title