Plasma processing apparatus

Patent metadata

Field	Value
Publication number	US-10984993-B2
Application number	US-201013876133-A
Country	US
Kind code	B2
Filing date	Dec 22, 2010
Priority date	Sep 27, 2010
Publication date	Apr 20, 2021
Grant date	Apr 20, 2021

Abstract

A plasma processing apparatus includes a chamber ( 20 ) and a target ( 25 ) above the chamber ( 20 ). The surface of the target ( 25 ) contacts the processing area of the chamber ( 20 ). The chamber ( 20 ) includes an insulating sub-chamber ( 21 ) and a first conductive sub-chamber ( 22 ), which are superposed. The first conductive sub-chamber ( 22 ) is provided under the insulating sub-chamber ( 21 ). The insulating sub-chamber ( 21 ) is made of insulating material, and the first conductive sub-chamber ( 22 ) is made of metal material. A Faraday shield component ( 10 ) which is made of metal material or insulating material electroplated with conductive coatings and includes at least one slit is provided in the insulating sub-chamber ( 21 ). An inductance coil ( 13 ) surrounds the exterior of the insulating sub-chamber ( 21 ). The problem about the wafer contamination due to particles formed on the surface of the coil during the sputtering process can be solved by using the plasma processing apparatus.

First claim

What is claimed is:

1. A plasma processing apparatus, comprising:
a chamber including a first conductive sub-chamber and an insulating sub-chamber arranged on top of the first conductive sub-chamber, such that the first conductive sub-chamber directly contacts the insulating sub-chamber, wherein:
the first conductive sub-chamber includes a first sidewall forming a first space inside the first conductive sub-chamber, and the insulating sub-chamber includes a second sidewall forming a second space inside the insulating sub-chamber,
an inner radius of the first sidewall is approximately equal to an inner radius of the second sidewall, and the second sidewall of the insulating sub-chamber is stacked on top of the first sidewall of the first conductive sub-chamber,
the first conductive sub-chamber is made of a metal material and electrically grounded, and the insulating sub-chamber is made of an insulating material, and
the insulating sub-chamber has a flange at a bottom of the insulating sub-chamber, the flange extending towards a centerline of the plasma processing apparatus;

a target located above the chamber, a surface of the target contacting a processing space, that includes the first space and the second space, inside the chamber;
a Faraday shield component including an axial height less than an axial height of the insulating sub-chamber and provided inside the insulating sub-chamber, wherein:
a bottom end of the Faraday shield component directly contacts a top surface of the flange of the insulating sub-chamber and arranged on the flange,
the Faraday shield component is made of a metal material or an insulating material electroplated with conductive coatings, and
the Faraday shield component includes at least one slit in an axial direction along a full length of the Faraday shield component, the at least one slit being filled with an insulating material,

a first blocking component comprising a first part and a second part, wherein:
the first part connects with the second part to form an L shape in a cross section taken along the inner radius of the second sidewall,
the first part and the bottom end of the Faraday shield component are arranged next to each other on the top surface of the flange,
the second part extends downward and parallels with the first sidewall of the first conductive sub-chamber, the second part being suspended off the flange by the first part and configured to block a slot between the insulating sub-chamber and the first conductive sub-chamber, and
the first blocking component is made of a ceramic material;

a second blocking component comprising a third part and a fourth part, wherein:
the third part connects with the fourth part to form another L-shape in the cross section taken along the inner radius of the second sidewall,
the third part is provided on a top surface of the insulating sub-chamber, and
the fourth part extends downward and parallels with the second sidewall of the insulating sub-chamber, the fourth part being suspended off the top surface of the insulating sub-chamber by the third part; and

an induction coil entirely arranged outside the second sidewall of the insulating sub-chamber, the insulating sub-chamber being surrounded by the induction coil.

2. The plasma processing apparatus according to claim 1 , wherein the insulating sub-chamber has a cylindrical shape, and the flange has a smaller inner radius than the inner radius of the second wall of the insulating sub-chamber.

3. The plasma processing apparatus according to claim 1 , wherein the Faraday shield component has a cylindrical shape.

4. The plasma processing apparatus according to claim 1 , further comprising an isolation component provided between the target and the insulating sub-chamber.

5. The plasma processing apparatus according to claim 1 , further comprising a coil protection cover provided outside of the induction coil.

6. The plasma processing apparatus according to claim 1 , wherein the plasma processing apparatus is a physical vapor deposition device.

7. The plasma processing apparatus according to claim 1 , wherein the insulating material filling in the at least one slit of the Faraday shield component is ceramic or quartz.

8. The plasma processing apparatus according to claim 1 , wherein the insulating sub-chamber, the first conductive sub-chamber, and the Faraday shield component are formed in co-axial cylindrical shapes.

9. The plasma processing apparatus according to claim 1 , wherein the insulating sub-chamber is ceramic or quartz.

10. The plasma processing apparatus according to claim 1 , wherein the second blocking component is made of a metal material.

11. The plasma processing apparatus according to claim 1 , wherein the flange, at the bottom of the insulating sub-chamber, comprises a plurality of protruding parts distributed on an inner side of the second sidewall of the insulating sub-chamber at intervals.

12. The plasma processing apparatus according to claim 1 , further comprising an electrostatic chuck provided at a bottom of the processing space, the electrostatic chuck being electrically grounded or being connected with a radio frequency (RF) power supply.

13. The plasma processing apparatus according to claim 4 , wherein the second blocking component is provided between the insulating sub-chamber and the isolation component.

14. A plasma processing apparatus, comprising: a chamber including a first conductive sub-chamber, a second conductive sub-chamber, and an insulating sub-chamber arranged on top of the first conductive sub-chamber, such that the first conductive sub-chamber directly contacts the insulating sub-chamber, wherein:
the first conductive sub-chamber includes a first sidewall forming a first space inside the first conductive sub-chamber, and the insulating sub-chamber includes a second sidewall forming a second space inside the insulating sub-chamber,
an inner radius of the first sidewall is approximately equal to an inner radius of the second sidewall, and the second sidewall of the insulating sub-chamber is stacked on top of the first sidewall of the first conductive sub-chamber,
the first conductive sub-chamber is made of a metal material and electrically grounded, and the insulating sub-chamber is made of an insulating material,
the second conductive sub-chamber is provided between an isolation component and the insulating sub-chamber, the isolation component being disposed between the second conductive sub-chamber and the target, and
the insulating sub-chamber has a flange at a bottom of the insulating sub-chamber, the flange extending towards a centerline of the plasma processing apparatus;
a target located above the chamber, a surface of the target contacting a processing space, that includes the first space and the second space, inside the chamber;
a Faraday shield component including an axial height less than an axial height of the insulating sub-chamber and provided inside the insulating sub-chamber, wherein:
a bottom end of the Faraday shield component directly contacts a top surface of the flange of the insulating sub-chamber and arranged on the flange,
the Faraday shield component is made of a metal material or an insulating material electroplated with conductive coatings, and
the Faraday shield component includes at least one slit in an axial direction along a full length of the Faraday shield component, the at least one slit being filled with an insulating material;
a first blocking component comprising a first part and a second part, wherein:
the first part connects with the second part to form an L shape in a cross section taken along the

Assignees

• Chen Peng
• Zhao Mengxin
• Wei Gang
• Zhang Liang
• Yang Bai
• Wu Guilong
• Ding Peijun
• Beijing Naura Microelectronics Equipment Co Ltd

Inventors

• Chen Peng
• Zhao Mengxin
• Wei Gang
• Zhang Liang
• Yang Bai
• Wu Guilong
• Ding Peijun

Classifications

• H01J37/34

  operating with cathodic sputtering (H01J37/36 takes precedence {; methods of cathodic sputtering C23C14/34}) · CPC title

• C23C14/35 Primary

  by application of a magnetic field, e.g. magnetron sputtering {(C23C14/3457 takes precedence)} · CPC title

• H01J37/3488 Primary

  Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus · CPC title

• H01J37/32651

  Shields, e.g. dark space shields, Faraday shields · CPC title

• C23C14/50

  Substrate holders · CPC title