Semiconductor quantum dot and method of carrying out chemical reaction or photoluminescence reaction by using the same

US10981139B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10981139-B2
Application numberUS-201916572785-A
CountryUS
Kind codeB2
Filing dateSep 17, 2019
Priority dateSep 19, 2014
Publication dateApr 20, 2021
Grant dateApr 20, 2021

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A semiconductor quantum dot is provided with a non-metallic substrate, and has a particle size ranged from 0.3 to 100 nm. A method of carrying out a chemical reaction or a photoluminescence reaction by using the semiconductor quantum dot is also provided. A redox reaction of a target sample is carried out, an active substance is generated, or an electron-hole pair is produced from the semiconductor quantum dot by providing the semiconductor quantum dot with a predetermined energy. Photons are released by the combination of the electron-hole pair so as to perform the photoluminescence reaction.

First claim

Opening claim text (preview).

What is claimed is: 1. A method of carrying out a chemical reaction by using a semiconductor quantum dot, comprising steps of: (1) mixing a target sample and the semiconductor quantum dot, wherein the semiconductor quantum dot comprises oxidized graphene oxide and has a particle size ranging from 0.3 to 100 nm; and (2) providing the semiconductor quantum dot with a predetermined energy, so that the semiconductor quantum dot generates electron-hole pairs, and a redox reaction of the target sample is carried out by the electron-hole pairs; or the target sample or a surrounding molecule thereof generates an active substance, and a redox reaction of the target sample is carried out by the active substance. 2. The method according to claim 1 , wherein the semiconductor quantum dot comprises at least one dopant. 3. The method according to claim 2 , wherein the dopant is selected from at least one of group IIIA element, group IVA element, group VA element, group VIA element, and transition element having an empty d orbital. 4. The method according to claim 2 , wherein the dopant is at least one of O, N, P, B, Fe, Co, and Ni. 5. The method according to claim 2 , wherein the dopant has a doping ratio more than 0 mol % and less than 50 mol %. 6. The method according to claim 1 , wherein the semiconductor quantum dot is disc-shaped, and has a thickness ranged from 0.1 nm to 10 nm. 7. The method according to claim 1 , wherein the semiconductor quantum dot has a surface with at least one functional group selected from H, a group-VA-element functional group, or a group-VIA-element functional group. 8. The method according to claim 7 , wherein the group-VA-element functional group is an amino group, P, or a phosphate group. 9. The method according to claim 7 , wherein the group-VIA-element functional group is hydroxyl, carbonyl, carboxyl, or acyl. 10. The method according to claim 1 , wherein the predetermined energy is provided by a laser, a mercury lamp, a visible light, an ultraviolet light, an infrared light, an endoscopic light, an X-ray, an ultrasound, an electric field, a magnetic field, a nuclear magnetic resonance, or a light-emitting diode in the step (2). 11. The method according to claim 1 , wherein the redox reaction in the step (2) comprises decomposition of the target sample, polymerization of the target sample, activation of the target sample, or deactivation of the target sample. 12. The method according to claim 11 , wherein the active substance is a free radical or a peroxide. 13. The method according to claim 12 , wherein the free radical is O 2. or OH.; and the peroxide is H 2 O 2 . 14. The method according to claim 1 , wherein the target sample is selected from biological cells, bacteria, viruses, parasites, cell secretions, biological molecules, an organic compound, or an inorganic compound. 15. The method according to claim 14 , wherein the organic compound is an aromatic compound, alcohol, aldehyde, ketone, acid, amine, urea, or a polymer thereof. 16. The method according to claim 14 , wherein the inorganic compound is water, nitrite, nitrate or ammonia. 17. The method according to claim 14 , wherein the biological molecules are peptides, nucleic acids, lipids, carbohydrates, vitamins, hormones, or a polymer thereof. 18. The method according to claim 14 , wherein the cell secretions are extracellular vesicles or extracellular matrix.

Assignees

Inventors

Classifications

  • wherein the radiation-sensitive semiconductor devices and the electric light source share a common body having dual-functionality of light emission and light detection · CPC title

  • Infrared light · CPC title

  • employing sonic or ultrasonic vibrations · CPC title

  • containing silicon · CPC title

  • Nitrogen compounds · CPC title

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What does patent US10981139B2 cover?
A semiconductor quantum dot is provided with a non-metallic substrate, and has a particle size ranged from 0.3 to 100 nm. A method of carrying out a chemical reaction or a photoluminescence reaction by using the semiconductor quantum dot is also provided. A redox reaction of a target sample is carried out, an active substance is generated, or an electron-hole pair is produced from the semicondu…
Who is the assignee on this patent?
Univ Nat Cheng Kung, National Cheng Kung Univ Hospital
What technology area does this patent fall under?
Primary CPC classification B01J19/087. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Apr 20 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).