Semiconductor structure

Patent metadata

Field	Value
Publication number	US-10978575-B2
Application number	US-201916596953-A
Country	US
Kind code	B2
Filing date	Oct 9, 2019
Priority date	Mar 21, 2017
Publication date	Apr 13, 2021
Grant date	Apr 13, 2021

Abstract

A semiconductor structure is provided and includes a substrate; a gate dielectric layer on the substrate; a dielectric barrier layer structure on the gate dielectric layer; a work function layer on the dielectric barrier layer structure; a gate barrier layer structure on the work function layer; and a gate electrode layer on the gate barrier layer structure. The dielectric barrier layer structure is doped with silicon and the gate barrier layer structure is doped with silicon.

First claim

What is claimed is:

1. A semiconductor structure, comprising:
a substrate;
a gate dielectric layer on the substrate;
a dielectric barrier layer structure on the gate dielectric layer, wherein the dielectric barrier layer structure is doped with silicon;
a work function layer on the dielectric barrier layer structure;
a gate barrier layer structure on the work function layer, wherein the gate barrier layer structure is doped with silicon; and
a gate electrode layer on the gate barrier layer structure.

2. The structure according to claim 1 , wherein the dielectric barrier layer structure includes:
a first dielectric barrier layer doped with silicon on the gate dielectric layer, and
a second dielectric barrier layer on the first dielectric barrier layer.

3. The structure according to claim 1 , wherein:
the first dielectric barrier layer has a thickness in a range of approximately from 20 Å to 40 Å.

4. The structure according to claim 2 , wherein:
the first dielectric barrier layer is made of a material including silicon-doped titanium nitride.

5. The structure according to claim 2 , wherein:
an atomic percentage concentration of silicon in the first dielectric barrier layer is in a range of approximately 5%-15%.

6. The structure according to claim 2 , wherein:
the second dielectric barrier layer has a thickness in a range of approximately from 10 Å to 20 Å.

7. The structure according to claim 2 , wherein:
the second dielectric barrier layer is made of a material including titanium nitride.

8. The structure according to claim 2 , wherein:
the average atomic percentage concentration of silicon in the dielectric barrier layer structure is smaller than the average atomic percentage concentration of silicon in the first dielectric barrier layer.

9. The structure according to claim 1 , wherein:
the gate dielectric layer is made of a material including hafnium oxide; and
the gate electrode layer is made of a material including aluminum.

10. The structure according to claim 1 , wherein:
a thickness of the dielectric barrier layer structure in a range of approximately from 30 Å to 60 Å.

11. The structure according to claim 1 , wherein:
a thickness of the gate barrier layer structure is in a range of approximately from 30 Å to 60 Å.

12. The structure according to claim 1 , wherein the gate barrier layer structure includes:
a first gate barrier layer on the work function layer, and
a second gate barrier layer on the first gate barrier layer, wherein the second gate barrier layer is doped with silicon.

13. The structure according to claim 12 , wherein:
a thickness of the first gate barrier layer is in a range of approximately from 10 Å to 20 Å.

14. The structure according to claim 12 , wherein:
the first gate barrier layer is made of a material including titanium nitride.

15. The structure according to claim 12 , wherein:
a thickness of the second gate barrier layer is in a range of approximately from 20 Å to 40 Å.

16. The structure according to claim 12 , wherein:
the second gate barrier layer is made of a material including silicon-doped titanium nitride.

17. The structure according to claim 12 , wherein:
an atomic percentage concentration of silicon in the second gate barrier layer is in a range of approximately 5%-15%.

18. The structure according to claim 12 , wherein:
the dielectric barrier layer structure has a stacked structure and an average atomic percentage concentration of silicon in the dielectric barrier layer structure is smaller than an average atomic percentage concentration of silicon in a layer of the stacked structure adjacent to the work function layer.

19. The structure according to claim 12 , wherein:
the gate barrier layer structure has stacked structures, and
an average atomic percentage concentration of silicon in the gate barrier layer structure is smaller than an average atomic percentage concentration of silicon in the second gate barrier layer.

Assignees

• Semiconductor Mfg Int Shanghai Corp
• Semiconductor Mfg Int Beijing Corp

Inventors

• Deng Hao

Classifications

• H10P14/6334

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title

• H10D64/01318

  the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN (comprising a layer of alloys of Si, Ge or C H10D64/01314) · CPC title

• H10W20/074

  of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers · CPC title

• H10W20/033

  in openings in dielectrics · CPC title

• H10W10/011

  of isolation regions comprising dielectric materials · CPC title