Luminescent complex, luminescent material, substrate for display and production method thereof, and display apparatus
US-10287498-B2 · May 14, 2019 · US
US10975014B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10975014-B2 |
| Application number | US-201615741756-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 2, 2016 |
| Priority date | Jul 1, 2016 |
| Publication date | Apr 13, 2021 |
| Grant date | Apr 13, 2021 |
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The present disclosure provides quantum dot organic ligand and preparation method thereof, quantum dot structure material, quantum-dot-containing layer, and quantum-dot-containing light emitting diode. The quantum dot organic ligand have the following structure R1-(R2) n -R3, wherein R1 is a chelating group capable of chelating with a metal; R2 is a group having a conjugated electron pair, and n is a positive integer; and R3 is organic group. The conjugated electron pair structure of R2 facilitates delocalization of electrons, which can improve the transport and conduction of electrons and/or holes, thereby improving the efficiency of quantum dots and lowering the turn-on voltage.
Opening claim text (preview).
What is claimed is: 1. A quantum dot organic ligand, comprising a structure represented by a formula selected from a group consisting of: and R1-(R2-R3) n , wherein R1 is a chelating group capable of chelating with a metal, R2 comprises a structure selected from the group consisting of a 9, 10-di(2-naphthyl)anthracene structure, a rubrene structure, and a combination thereof, R3 is an organic group connected to R2; wherein n is a positive integer. 2. The quantum dot organic ligand according to claim 1 , wherein R1 comprises a group selected from the group consisting of a phosphine group, a phosphonic acid group, an amino group, a mercapto group, a hydroxyl group, and a combination thereof. 3. The quantum dot organic ligand according to claim 1 , wherein R3 comprises an alkane group. 4. A quantum dot structure, comprising: the quantum dot organic ligand according to claim 1 in chelated form; and a core or a core-shell; wherein the quantum dot organic ligand is chelated to the core, or to a shell part of the core-shell. 5. The quantum dot structure of claim 4 , comprising a structure represented by Formula (3): wherein: QD is an inorganic part of the quantum dot structure, comprising the core or the core-shell. 6. The quantum dot structure according to claim 5 , wherein the inorganic part of the quantum dot structure is made of one or more materials selected from CdS, CdSe, CdTe, ZnSe, InP, PbS, CsPbCl 3 , CsPbBr 3 , CsPhI 3 , CsPbCl x Br 3-x , CsPbBr x I 3-x , CdS/ZnS, CdSe/ZnS, ZnSe, InP/ZnS, PbS/ZnS, CsPbCl 3 /ZnS, CsPbBr 3 /ZnS, CsPhI 3 /ZnS, CsPbClxBr 3-x /ZnS, CsPbBrxI 3-x /ZnS, or a combination thereof, wherein x is a positive integer and x<3. 7. The quantum dot structure of claim 4 , comprising a structure represented by Formula (4) wherein: QD represents an inorganic part of the quantum dot structure, comprising the core or the core-shell. 8. The quantum dot structure according to claim 7 , wherein the inorganic part of the quantum dot structure is made of one or more materials selected from CdS, CdSe, CdTe, ZnSe, InP, PbS, CsPbCl 3 , CsPbBr 3 , CsPhI 3 , CsPbCl x Br 3-x , CsPbBr x I 3-x , CdS/ZnS, CdSe/ZnS, ZnSe, InP/ZnS, PbS/ZnS, CsPbCl 3 /ZnS, CsPbBr 3 /ZnS, CsPhI 3 /ZnS, CsPbClxBr 3-x /ZnS, CsPbBrxI 3-x /ZnS, or a combination thereof, wherein x is a positive integer and x<3. 9. A quantum-dot-containing layer, comprising the quantum dot structure according to claim 4 . 10. A quantum-dot-based light emitting diode, comprising a quantum-dot-containing layer according to claim 9 .
containing condensed ring systems · CPC title
by splitting-off the elements of hydrogen halide from a single molecule · CPC title
by isomerisation; by change of size of the carbon skeleton · CPC title
Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes · CPC title
conjugated, e.g. PPV-type · CPC title
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