Silicon-containing structure, method of preparing the same, carbon composite using the same, and electrode, lithium battery, and device each including the same

Patent metadata

Field	Value
Publication number	US-10974965-B2
Application number	US-201916253639-A
Country	US
Kind code	B2
Filing date	Jan 22, 2019
Priority date	Jan 26, 2018
Publication date	Apr 13, 2021
Grant date	Apr 13, 2021

Abstract

A silicon-containing structure including: a silicon composite including a porous silicon secondary particle and a first carbon flake on a surface of the porous silicon secondary particle; a carbonaceous coating layer on the porous silicon composite, the carbonaceous coating layer comprising a first amorphous carbon; and the silicon composite comprises a second amorphous carbon and has a density that is equal to or less than a density of the carbonaceous coating layer, wherein the porous silicon secondary particle includes an aggregate of silicon composite primary particles, each including silicon, a silicon suboxide on a surface of the silicon, and a second carbon flake on a surface of the silicon suboxide.

First claim

What is claimed is:

1. A silicon-containing structure comprising:
a silicon composite comprising
a porous silicon secondary particle, and
a first carbon flake on a surface of the porous silicon secondary particle;

a carbonaceous coating layer on the silicon composite, the carbonaceous coating layer comprising a first amorphous carbon; and
the silicon composite comprises a second amorphous carbon and has a density that is equal to or less than a density of the carbonaceous coating layer,
wherein the porous silicon secondary particle comprises an aggregate of silicon composite primary particles, each comprising
silicon,
a silicon suboxide on a surface of the silicon, and
a second carbon flake on a surface of the silicon suboxide, and

wherein pores in the porous silicon secondary particle are filled with the second amorphous carbon.

2. The silicon-containing structure of claim 1 , wherein the silicon suboxide is a film, a matrix, or a combination thereof, and
the first carbon flake and the second carbon flake are each independently a film, a particle, a matrix, or a combination thereof.

3. The silicon-containing structure of claim 1 , wherein the second amorphous carbon is disposed in a pore of the porous silicon secondary particle.

4. The silicon-containing structure of claim 1 , wherein the silicon composite has a porosity of greater than 0 to about 60 percent or less.

5. The silicon-containing structure of claim 1 , wherein the first carbon flake and the second carbon flake are a same carbon flake.

6. The silicon-containing structure of claim 1 , wherein a ratio of a total weight of the first carbon flake and the second carbon flake to a total weight of the first amorphous carbon and the second amorphous carbon is about 1:99 to 99:1.

7. The silicon-containing structure of claim 1 , wherein a ratio of a total weight of the first carbon flake and the second carbon flake to a total weight of the first amorphous carbon and the second amorphous carbon is about 1:1 to about 1:10.

8. The silicon-containing structure of claim 1 , wherein the silicon-containing structure has a non-spherical shape.

9. The silicon-containing structure of claim 1 , wherein the first carbon flake and the second carbon flake each independently comprise graphene, graphite, carbon fiber, graphitic carbon, graphene oxide, or a combination thereof.

10. The silicon-containing structure of claim 1 , wherein the first amorphous carbon and the second amorphous carbon each independently comprise pitch carbon, soft carbon, hard carbon, a meso-phase pitch carbide, a sintered coke, carbon fiber, or a combination thereof.

11. The silicon-containing structure of claim 1 , wherein the carbonaceous coating layer further comprises a crystalline carbon.

12. The silicon-containing structure of claim 11 , wherein the crystalline carbon comprises natural graphite, artificial graphite, graphene, fullerene, carbon nanotubes, or a combination thereof.

13. The silicon-containing structure of claim 1 , wherein the carbonaceous coating layer comprises a first carbonaceous coating layer comprising amorphous carbon, and a second carbonaceous coating layer comprising crystalline carbon.

14. The silicon-containing structure of claim 1 , wherein the carbonaceous coating layer is a non-porous continuous coating layer having a thickness of about 1 nanometer to about 5,000 nanometers.

15. The silicon-containing structure of claim 1 , wherein a total amount of the first carbon flake and the second carbon flake in the silicon-containing structure is about 0.1 parts by weight to about 2,000 parts by weight, based on 100 parts by weight of the silicon in the silicon composite structure.

16. The silicon-containing structure of claim 1 , wherein the first carbon flake of the porous silicon secondary particle is a first graphene flake, the first graphene flake comprises about 1 to about 30 graphene layers, and
a total thickness of the first graphene flake is about 0.3 nanometers to about 50 nanometers.

17. The silicon-containing structure of claim 16 , wherein the first graphene flake is oriented at an angle of about 0° to about 90° with respect to a major axis of the silicon, and the first graphene flake is spaced apart from the silicon suboxide by a distance of about 1,000 nm or less.

18. The silicon-containing structure of claim 1 , wherein the second carbon flake of the silicon composite primary particle is a second graphene flake, which comprises about 1 to about 30 graphene layers, and
a total thickness of the second carbon flake is about 0.3 nanometers to about 50 nanometers.

19. The silicon-containing structure of claim 1 , wherein the second carbon flake is oriented at an angle of about 0° to about 90° with respect to a major axis of the silicon, and the second graphene flake is spaced apart from the silicon suboxide by a distance of about 10 nm or less.

20. The silicon-containing structure of claim 1 , wherein the silicon suboxide has a thickness of about 30 micrometers or less.

21. The silicon-containing structure of claim 1 , wherein a shape of the silicon comprises a sphere, a nanowire, a needle, a rod, a particle, a nanotube, a nanorod, a wafer, a nanoribbon, or a combination thereof.

22. The silicon-containing structure of claim 1 , wherein the porous silicon secondary particle has an average particle diameter of about 200 nanometers to about 50 micrometers, a specific surface area of about 0.1 square meters per gram to about 100 square meters per gram, and a density of about 0.1 grams per cubic centimeter to about 2.8 grams per cubic centimeter.

23. The silicon-containing structure of claim 1 , wherein the silicon comprises particles having an average size of about 10 nanometers to about 30 micrometers.

24. The silicon-containing structure of claim 1 , wherein the silicon composite has a D50 particle size of about 1 micrometer to about 30 micrometers, a D10 particle size of about 0.001 micrometer to about 10 micrometers, and a D90 particle size of about 10 micrometers to about 60 micrometers.

25. A method of preparing the silicon-containing structure of claim 1 , the method comprising:
providing the porous silicon secondary particle;
supplying a gas comprising a carbon source to the porous silicon secondary particle and thermally treating the porous silicon secondary particle to prepare the silicon composite;
combining the silicon composite, the first amorphous carbon, and an additive;
forming the carbonaceous coating layer comprising the first amorphous carbon on a surface of the silicon composite; and
disposing the second amorphous carbon in pores of the porous silicon secondary particle to form the silicon-containing structure.

26. The method of claim 25 , wherein the providing of the porous silicon secondary particle comprises preparing a composition comprising a dispersing agent, a first solvent, and particles comprising silicon and silicon suboxide on a surface of the silicon.

27. The method of claim 25 , wherein an amount of the first amorphous carbon in the composition obtained by combining the silicon composite, the first amorphous carbon, and an additive is about 3 parts by weight to about 60 parts by weight with respect to 100 parts by weight of the silicon composite.

28. The method of claim 25 , wherein the combining of the silicon composite, the first amorphous carbon, and the ad

Assignees

• Samsung Electronics Co Ltd
• Samsung Sdi Co Ltd

Inventors

• Moon Jongseok
• Kim Mijong
• Kim Sewon
• Shim Kyueun
• Han Sungsoo
• Son Inhyuk
• Lee Jumyeung
• Lim Minwoo

Classifications

• C01B33/00

  Silicon; Compounds thereof ({C01B6/00,} C01B21/00, C01B23/00 take precedence; persilicates C01B15/14; carbides C01B32/956) · CPC title

• H01M4/0428

  Chemical vapour deposition · CPC title

• H01M4/0416

  involving impregnation with a solution, dispersion, paste or dry powder (H01M4/0438 takes precedence) · CPC title

• C01B32/186

  by chemical vapour deposition [CVD] · CPC title

• H01M4/1395

  of electrodes based on metals, Si or alloys · CPC title