Radio frequency power amplifier and power amplifier module

Patent metadata

Field	Value
Publication number	US-10972060-B2
Application number	US-201916569271-A
Country	US
Kind code	B2
Filing date	Sep 12, 2019
Priority date	Sep 14, 2018
Publication date	Apr 6, 2021
Grant date	Apr 6, 2021

Abstract

In a radio frequency power amplifier, a semiconductor chip includes at least one first transistor amplifying a radio frequency signal, a first external-connection conductive member connected to the first transistor, a bias circuit including a second transistor that applies a bias voltage to the first transistor, and a second external-connection conductive member connected to the second transistor. The second external-connection conductive member at least partially overlaps with the second transistor when viewed in plan.

First claim

What is claimed is:

1. A radio frequency power amplifier including a semiconductor chip, the semiconductor chip comprising:
at least one first transistor amplifying a radio frequency signal;
a first external-connection conductive member connected to the first transistor;
a bias circuit including a second transistor that applies a bias voltage to the first transistor; and
a second external-connection conductive member connected to the second transistor,
wherein the second external-connection conductive member at least partially overlaps with the second transistor when viewed in plan.

2. The radio frequency power amplifier according to claim 1 , wherein
the bias circuit further includes a temperature compensation element controlling the second transistor that reduces the bias voltage, which is applied to the first transistor, with a temperature rise, and
a shortest distance from the first transistor to the second transistor is longer than a shortest distance from the first transistor to the temperature compensation element.

3. The radio frequency power amplifier according to claim 2 , wherein
the bias circuit further includes, in addition to the second transistor and the temperature compensation element, a bias element that is at least one of a resistance, a capacitance, and a transistor, and
the bias element does not overlap with the first external-connection conductive member and overlaps with the second external-connection conductive member or another external-connection conductive member when viewed in plan.

4. The radio frequency power amplifier according to claim 2 , wherein
the at least one first transistor is a plurality of the first transistors disposed on the semiconductor chip, the plurality of the first transistors are divided into at least two groups, the first external-connection conductive member is disposed for each of the at least two groups, and
the temperature compensation element is disposed between the first transistor belonging to one of the at least two groups and the first transistor belonging to the other group.

5. The radio frequency power amplifier according to claim 1 , wherein
the first transistor is a hetero-junction bipolar transistor, the first external-connection conductive member is connected to an emitter or a collector of the first transistor, and
the second transistor applies a voltage to a base or the collector of the first transistor.

6. The radio frequency power amplifier according to claim 1 , wherein
the first transistor is a field effect transistor,
the first external-connection conductive member is connected to a drain or a source of the first transistor, and
the second transistor applies a voltage to a gate or the drain of the first transistor.

7. The radio frequency power amplifier according to claim 1 , wherein the first transistor is contained within a contour of the first external-connection conductive member when viewed in plan.

8. The radio frequency power amplifier according to claim 3 , wherein
the at least one first transistor is a plurality of the first transistors disposed on the semiconductor chip, the plurality of the first transistors are divided into at least two groups, the first external-connection conductive member is disposed for each of the at least two groups, and
the temperature compensation element is disposed between the first transistor belonging to one of the at least two groups and the first transistor belonging to the other group.

9. The radio frequency power amplifier according to claim 2 , wherein
the first transistor is a hetero-junction bipolar transistor, the first external-connection conductive member is connected to an emitter or a collector of the first transistor, and
the second transistor applies a voltage to a base or the collector of the first transistor.

10. The radio frequency power amplifier according to claim 2 , wherein
the first transistor is a field effect transistor,
the first external-connection conductive member is connected to a drain or a source of the first transistor, and
the second transistor applies a voltage to a gate or the drain of the first transistor.

11. A power amplifier module comprising:
a semiconductor chip; and
a module substrate onto which the semiconductor chip is mounted,
the semiconductor chip comprising:
at least one first transistor amplifying a radio frequency signal;
a first external-connection conductive member connected to the first transistor;
a bias circuit including a second transistor that applies a bias voltage to the first transistor; and
a second external-connection conductive member connected to the second transistor,
wherein
the second external-connection conductive member at least partially overlaps with
the second transistor when viewed in plan, and
the module substrate comprises:
a dielectric portion made of a dielectric material;
a first land and a second land that are opposed respectively to the first external-connection conductive member and the second external-connection conductive member and that are connected respectively to the first external-connection conductive member and the second external-connection conductive member; and
a conductor pattern disposed as an inner layer in the dielectric portion, connected to the second land, and having a size and a shape containing a contour of the second land when viewed in plan.

12. The power amplifier module according to claim 11 , wherein
the bias circuit further includes a temperature compensation element controlling the second transistor that reduces the bias voltage, which is applied to the first transistor, with a temperature rise, and
a shortest distance from the first transistor to the second transistor is longer than a shortest distance from the first transistor to the temperature compensation element.

13. The power amplifier module according to claim 12 , wherein
the bias circuit further includes, in addition to the second transistor and the temperature compensation element, a bias element that is at least one of a resistance, a capacitance, and a transistor, and
the bias element does not overlap with the first external-connection conductive member and overlaps with the second external-connection conductive member or another external-connection conductive member when viewed in plan.

14. The power amplifier module according to claim 12 , wherein
the at least one first transistor is a plurality of the first transistors disposed on the semiconductor chip, the first transistors are divided into at least two groups,
the first external-connection conductive member is disposed for each of the at least two groups, and
the temperature compensation element is disposed between the first transistor belonging to one of the at least two groups and the first transistors belonging to the other group.

15. The power amplifier module according to claim 11 , wherein
the first transistor is a hetero-junction bipolar transistor, the first external-connection conductive member is connected to an emitter or a collector of the first transistor, and
the second transistor applies a voltage to a base or the collector of the first transistor.

16. The power amplifier module according to claim 11 , wherein the first transistor is a field effect transistor, the first external-connection conductive member is connected to a drain or a source of the first transistor, and the second transistor applies a voltage to a gate or the drain of the first transistor.

17. The power amplifier module according to claim 11 , wherein the first transistor is contain

Assignees

• Murata Manufacturing Co

Inventors

• Sasaki Kenji
• Obu Isao
• Tsutsui Takayuki

Classifications

• H10W72/926

  Multiple bond pads having different sizes · CPC title

• H10W72/936

  Multiple bond pads having different shapes · CPC title

• H10W72/29

  Bond pads specially adapted therefor · CPC title

• H10W72/9415

  relative to the surface, e.g. recessed, protruding · CPC title

• H10W72/352

  comprising metals or metalloids, e.g. solders · CPC title