Radiation-emitting semiconductor body and method of producing a semiconductor layer sequence

Patent metadata

Field	Value
Publication number	US-10971653-B2
Application number	US-201716348662-A
Country	US
Kind code	B2
Filing date	Nov 22, 2017
Priority date	Dec 1, 2016
Publication date	Apr 6, 2021
Grant date	Apr 6, 2021

Abstract

A radiation-emitting semiconductor body includes a semiconductor layer sequence including an active region that generates radiation, an n-conducting semiconductor layer and a p-conducting semiconductor layer, wherein the active region is arranged between the n-conducting semiconductor layer and the p-conducting semiconductor layer and the p-conducting semiconductor layer includes a first doping region with a first dopant and a second doping region with a second dopant different from the first dopant, and the p-conducting semiconductor layer includes a further doping region doped with the first dopant and has a thickness of at most 2 nm.

First claim

The invention claimed is:

1. A radiation-emitting semiconductor body comprising a semiconductor layer sequence comprising an active region that generates radiation, an n-conducting semiconductor layer and a p-conducting semiconductor layer, wherein the active region is arranged between the n-conducting semiconductor layer and the p-conducting semiconductor layer and the p-conducting semiconductor layer comprises a first doping region with a first dopant and a second doping region with a second dopant different from the first dopant, and the p-conducting semiconductor layer comprises a further doping region doped with the first dopant and has a thickness of at most 2 nm.

2. The radiation-emitting semiconductor body according to claim 1 , wherein the first doping region has a thickness of at most 2 nm.

3. The radiation-emitting semiconductor body according to claim 1 , wherein the first dopant and the second dopant each effect a p-doping.

4. The radiation-emitting semiconductor body according to claim 1 , wherein the semiconductor body is based on a III-V compound semiconductor material.

5. The radiation-emitting semiconductor body according to claim 4 , wherein the first dopant is incorporated on group V lattice points.

6. The radiation-emitting semiconductor body according to claim 1 , wherein the first dopant is carbon.

7. The radiation-emitting semiconductor body according to claim 6 , wherein the second dopant is incorporated on group III lattice points.

8. The radiation-emitting semiconductor body according to claim 1 , wherein the first doping region is arranged between the active region and the second doping region.

9. The radiation-emitting semiconductor body according to claim 1 , wherein the first doping region and the second doping region directly adjoin one another.

10. The radiation-emitting semiconductor body according to claim 1 , wherein the first doping region forms a charge carrier barrier for electrons.

11. The radiation-emitting semiconductor body according to claim 1 , wherein the first doping region and the further doping region are spaced apart from one another by at most 5 nm.

12. A method of producing a semiconductor layer sequence comprising:
a) providing a substrate; and
b) growing a semiconductor layer sequence comprising an active region that generates radiation, an n-conducting semiconductor layer and a p-conducting semiconductor layer, wherein the active region is arranged between the n-conducting semiconductor layer and the p-conducting semiconductor layer and the p-conducting semiconductor layer comprises a first doping region with a first dopant and a second doping region with a second dopant different from the first dopant, and the p-conducting semiconductor layer comprises a further doping region doped with the first dopant and has a thickness of at most 2 nm.

13. The method according to claim 12 , wherein the first doping region is deposited at a temperature of at most 600° C.

14. The method according to claim 12 , wherein the semiconductor layer sequence is based on a III-V compound semiconductor material, and the first doping region is formed at a low III/V ratio.

15. The method according to claim 12 , wherein the semiconductor layer sequence is based on a III-V compound semiconductor material and, to produce the first doping region, exclusively gas with the first dopant is supplied at least temporarily without feeding a further gas for the group III atoms and the group V atoms.

16. The method according to claim 12 , in which a semiconductor body comprising a semiconductor layer sequence comprising an active region that generates radiation, an n-conducting semiconductor layer and a p-conducting semiconductor layer, wherein the active region is arranged between the n-conducting semiconductor layer and the p-conducting semiconductor layer and the p-conducting semiconductor layer comprises a first doping region with a first dopant and a second doping region with a second dopant different from the first dopant, and the p-conducting semiconductor layer comprises a further doping region doped with the first dopant and has a thickness of at most 2 nm is produced.

17. A radiation-emitting semiconductor body comprising a semiconductor layer sequence comprising an active region that generates radiation, an n-conducting semiconductor layer and a p-conducting semiconductor layer, wherein the active region is arranged between the n-conducting semiconductor layer and the p-conducting semiconductor layer and the p-conducting semiconductor layer comprises a first doping region with a first dopant and a second doping region with a second dopant different from the first dopant, and the second doping region is at least five times as thick as the first doping region, and the first doping region and the second doping region directly adjoin one another.

Assignees

• Osram Opto Semiconductors Gmbh
• Osram Oled Gmbh

Inventors

• Tonkikh Alexander
• Stauss Peter

Classifications

• H10H20/812 Primary

  within the light-emitting regions, e.g. having quantum confinement structures · CPC title

• H10H20/013

  having light-emitting regions comprising only Group III-V materials · CPC title

• H10H20/8242 Primary

  characterised by the dopants · CPC title

• H01L33/305 Primary

  Electricity · mapped topic

• H01L33/0062

  Electricity · mapped topic