Method for dehydrating semiconductor structure and dehydrating method of the same

Patent metadata

Field	Value
Publication number	US-10971353-B2
Application number	US-201916675934-A
Country	US
Kind code	B2
Filing date	Nov 6, 2019
Priority date	Mar 28, 2018
Publication date	Apr 6, 2021
Grant date	Apr 6, 2021

Abstract

The present disclosure provides a method for dehydrating a semiconductor structure, including providing a semiconductive substrate, forming a trench on the semiconductive substrate, dispensing an agent in liquid form into the trench, solidifying the agent, and dehydrating a surface in the trench by transforming the agent from solid form to vapor form.

First claim

What is claimed is:

1. A method for dehydrating a semiconductor structure, comprising:
providing a substrate;
forming a trench on the substrate;
dispensing diluted hydrogen fluoride into the trench;
dispensing isopropanol into the trench subsequent to dispensing diluted hydrogen fluoride;
dispensing an agent in liquid form into the trench subsequent to dispensing isopropanol;
solidifying the agent; and
transforming the agent from solid form to vapor form.

2. The method of claim 1 , wherein solidifying the agent includes cooling the substrate.

3. The method of claim 1 , wherein solidifying the agent is through lowering a temperature of the agent to at least 5 degrees below a melting point of the agent.

4. The method of claim 2 , wherein cooling the substrate is performed by purging a coolant on a surface of the substrate.

5. The method of claim 4 , wherein the surface is at an opposite side to the trench.

6. The method of claim 1 , further comprising dispensing deionized water into the trench prior to dispensing isopropanol.

7. The method of claim 1 , wherein a melting point of the agent is ranging from 0° C. to 25° C. under pressure 1 atm.

8. The method of claim 1 , wherein a saturated vapor pressure of the agent under pressure 1 atm and 5 degrees below the melting point is at least 1 kPa.

9. A method for fabricating a semiconductor structure, comprising:
forming a transistor, comprising:
providing a substrate;
forming a plurality of fins over the substrate; dispensing diluted fluoride into the spaces between the plurality of fins;
dispensing deionized water into the trench subsequent to dispensing diluted fluoride;
dispensing isopropanol into the trench subsequent to dispensing deionized water;
flowing an agent in spaces between the plurality of fins;
solidifying the agent in the spaces;
transforming the solidified agent into vapor in a chamber; and
providing gaseous H 2 O steam in the chamber subsequent to transforming the solidified agent into vapor.

10. The method of claim 9 , further comprising
dispensing deionized water between the plurality of fins; and
dispensing isopropanol between the plurality of fins subsequent to dispensing deionized water over the substrate.

11. The method of claim 9 , wherein a Young's modulus of the plurality of fins is lower than 200 GPa.

12. The method of claim 9 , wherein a melting point of the agent is ranging from 0° C. to 25° C. under 1 atm.

13. The method of claim 12 , wherein solidifying the agent is through lowering a temperature of the agent to at least 5 degrees below the melting point of the agent.

14. The method of claim 13 , wherein solidifying the agent includes cooling the substrate by purging a coolant on a surface of the substrate.

15. A method for dehydrating a substrate, comprising:
providing a substrate; dispensing diluted fluoride over the substrate;
dispensing deionized water over the substrate subsequent to dispensing diluted fluoride;
dispensing isopropanol into the trench subsequent to dispensing deionized water;
dispensing an agent in liquid form over the substrate;
solidify the agent;
vaporizing the agent from solid form to vapor form inside a chamber; and
providing gaseous H 2 O steam in the chamber subsequent to vaporizing the agent.

16. The method of claim 15 , wherein solidifying the agent is through lowering a temperature of the agent to at least 5 degrees below a melting point of the agent.

17. The method of claim 15 , wherein the saturated vapor pressure of the agent under 1 atm and 5 degrees below the melting point is at least 1 kPa.

18. The method of claim 15 , wherein the substrate is cooled down prior to providing gaseous H 2 O steam.

19. The method of claim 15 , further comprising dispensing diluted hydrogen fluoride over the substrate prior to dispensing the agent in liquid form over the substrate.

20. The method of claim 15 , further comprising
dispensing deionized water over the substrate; and
dispensing isopropanol over the substrate subsequent to dispensing deionized water over the substrate.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Lee Chung-Chieh

Classifications

• H10P72/7618

  characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel · CPC title

• H10P50/242

  of Group IV materials · CPC title

• H10P70/20 Primary

  Cleaning during device manufacture · CPC title

• F26B21/40

  using gases other than air · CPC title

• B08B3/10

  with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration · CPC title