Methods of forming materials for at least a portion of a NFT and NFTs formed using the same
US-9245573-B2 · Jan 26, 2016 · US
US10971180B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10971180-B2 |
| Application number | US-201715638453-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 30, 2017 |
| Priority date | Dec 6, 2013 |
| Publication date | Apr 6, 2021 |
| Grant date | Apr 6, 2021 |
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A method of forming a near field transducer (NFT), the method including the steps of depositing a primary material; and implanting a secondary element, wherein both the primary material and the secondary element are chosen such that the primary material is densified via implantation of the secondary element.
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What is claimed is: 1. A method of forming a near field transducer (NFT), the method comprising the steps of: depositing a primary material; implanting a secondary element into the primary material, wherein both the primary material and the secondary element are chosen such that the primary material is densified via implantation of the secondary element; and depositing a second portion of the primary material onto the densified primary material, wherein the primary material and the secondary element are the same and are selected from gold, copper, rhodium, and aluminum. 2. The method according to claim 1 , wherein the primary material is rhodium (Rh) and the secondary element is rhodium (Rh). 3. The method according to claim 1 , wherein the primary material is gold (Au) and the secondary element is gold. 4. The method according to claim 1 , wherein the primary material is copper (Cu) and the secondary element is copper (Cu). 5. The method according to claim 1 further comprising annealing after implanting the secondary element. 6. The method according to claim 1 , wherein implanting the secondary element comprises patterning steps. 7. The method according to claim 1 , wherein the secondary element is implanted at a fluence from about 1×10 11 to about 1×10 16 ions/cm 2 . 8. The method according to claim 1 , wherein the secondary element is implanted at an incident energy from about 1×10 12 to about 5×10 15 ions/cm 2 . 9. A method of forming a near field transducer (NFT), the method comprising the steps of: depositing a primary material; implanting a secondary element into the primary material; depositing a second portion of the primary material on the implanted primary material and forming at least part of a near field transducer (NFT) from the implanted primary material and the second portion of the primary material, wherein the primary material and the secondary element are the same and are selected from gold, copper, rhodium, and aluminum. 10. The method according to claim 9 , wherein the primary material and the secondary element are rhodium (Rh). 11. A method according to claim 9 , wherein the primary material is densified via implantation of the secondary element. 12. The method according to claim 9 , wherein the primary material and the secondary element are gold (Au). 13. The method according to claim 9 , wherein the primary material and the secondary element are copper (Cu). 14. The method according to claim 9 , wherein the primary material and the secondary element are aluminum (Al). 15. The method according to claim 9 further comprising depositing an encapsulant material after implanting the secondary element. 16. The method according to claim 9 further comprising annealing the primary material after the secondary element is implanted. 17. The method according to claim 9 , wherein the secondary element is implanted at a fluence from about 1×10 11 to about 1×10 16 ions/cm 2 . 18. The method according to claim 9 , wherein the secondary element is implanted at an incident energy from about 1×10 12 to about 5×10 15 ions/cm 2 . 19. A method of forming a near field transducer (NFT), the method comprising the steps of: depositing a primary material; implanting a secondary element into the primary material, wherein both the primary material and the secondary element are chosen such that the primary material is densified via implantation of the secondary element; and depositing a second portion of the primary material onto the densified primary material, wherein the primary material is copper and the secondary element is xenon.
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