Method for preparing silicon and/or germanium nanowires

Patent metadata

Field	Value
Publication number	US-10968107-B2
Application number	US-201716079936-A
Country	US
Kind code	B2
Filing date	Feb 28, 2017
Priority date	Feb 29, 2016
Publication date	Apr 6, 2021
Grant date	Apr 6, 2021

Abstract

The invention relates to a method for preparing a material made of silicon and/or germanium nanowires, comprising the steps of:
i) placing a source of silicon and/or a source of germanium in contact with a catalyst comprising a binary metal sulfide or a multinary metal sulfide, said metal(s) being selected from among Sn, In, Bi, Sb, Ga, Ti, Cu, and Zn, by means of which silicon and/or germanium nanowires are obtained, ii) optionally recovering the silicon and/or germanium nanowires obtained in step (i); the catalyst and, optionally, the source of silicon and/or the source of germanium being heated before, during and/or after being placed in contact under temperature and pressure conditions that allow the growth of the silicon and/or germanium nanowires.

First claim

The invention claimed is:

1. Method for preparing a material made of silicon and/or germanium nanowires, that comprises the steps of:
i) placing a silicon source and/or a germanium source in contact with a catalyst comprising a binary metal sulfide or a multinary metal sulfide, said metal(s) being selected from Sn, In, Bi, Sb, and Ga, by means of which the silicon and/or germanium nanowires are obtained,
ii) optionally recovering the silicon and/or germanium nanowires obtained in step (i);
the catalyst, and optionally the silicon source and/or the germanium source, being heated before, during, and/or after the placing in contact under temperature and pressure conditions allowing the growth of silicon and/or germanium nanowires, the heating being done at a temperature of between 200° C. and 500° C.

2. Method according to claim 1 , wherein the metal is tin.

3. Method according to claim 1 , wherein the silicon source is selected from silanes and organosilanes.

4. Method according to claim 1 , wherein the germanium source is selected from germanes and organogermanes.

5. Method according to claim 1 , wherein the catalyst is in the form of nanoparticles.

6. Method according to claim 1 , wherein said catalyst is present on a substrate.

7. Method according to claim 1 , wherein the catalyst is present on a substrate, said catalyst being in the form of one or more thin layers on said substrate.

8. Method according to claim 1 , wherein the catalyst is present on a substrate, said catalyst being in the form of nanoparticles on said substrate.

9. Method according to claim 1 , wherein the silicon source is selected from SiH 4 and SiCl 4 .

10. Method according to claim 1 , wherein the germanium source is selected from GeH 4 and GeCl 4 .

Assignees

• Commissariat Energie Atomique

Inventors

• Chenevier Pascale
• Reiss Peter

Classifications

• B01J2235/00

  Indexing scheme associated with group B01J35/00, related to the analysis techniques used to determine the catalysts form or properties · CPC title

• B01J35/77

  Compounds characterised by their crystallite size · CPC title

• B01J35/45

  Nanoparticles · CPC title

• B01J35/395

  Thickness of the active catalytic layer · CPC title

• B01J2235/15

  X-ray diffraction · CPC title