Chemical mechanical polishing system and method

Patent metadata

Field	Value
Publication number	US-10967479-B2
Application number	US-201916439965-A
Country	US
Kind code	B2
Filing date	Jun 13, 2019
Priority date	Jun 19, 2017
Publication date	Apr 6, 2021
Grant date	Apr 6, 2021

Abstract

The present disclosure relates to a chemical mechanical polishing (CMP) pad, and an associated method to perform a CMP process. In some embodiments, the CMP pad comprises a polishing layer having a front surface with protruding asperities while a back surface being planar. A film electrode is attached to the back surface of the polishing layer and is isolated from the front surface of the polishing layer. The CMP pad further comprises an insulating layer covering sidewall and bottom surfaces of the film electrode.

First claim

What is claimed is:

1. A chemical mechanical polishing (CMP) pad, comprising:
a polishing layer having a front surface with protruding asperities while a back surface being planar;
a film electrode attached to the back surface of the polishing layer and isolated from the front surface of the polishing layer; and
an insulating layer covering sidewall and bottom surfaces of the film electrode.

2. The CMP pad of claim 1 , wherein the film electrode is configured to affect movements of charged abrasive particles through applying electrical field during an operation of a CMP system.

3. The CMP pad of claim 1 , wherein the film electrode is provided onto a central region of the back surface of the polishing layer and configured to be integrally coupled to one polarity of a power supply.

4. The CMP pad of claim 1 , wherein the film electrode comprises an upper conductive layer comprising a first plurality of components and a second plurality of components staggered arranged and configured to be connected to opposite polarities of a power supply.

5. The CMP pad of claim 4 , wherein the film electrode further comprises a lower conductive layer away from the polishing layer, the lower conductive layer being integrally coupled to one polarity of the power supply.

6. The CMP pad of claim 5 , wherein the insulation layer includes a first portion separates the upper conductive layer from the lower conductive layer and a second portion covers and protects the lower conductive layer.

7. A chemical mechanical polishing (CMP) pad, comprising:
a polishing layer attached to a polishing platen and having a front surface configured to interact with a wafer to be processed; and
a film electrode attached to a back surface of the polishing layer opposite to the front surface, and configured to affect movements of charged abrasive particles through applying an electrical field during an operation of a CMP process;
wherein the film electrode comprises a first plurality of circular rings and a second plurality of circular rings concentric to the polishing layer and staggered arranged.

8. The CMP pad of claim 7 , wherein the film electrode is provided onto a central region of the back surface of the polishing layer.

9. The CMP pad of claim 7 , wherein the film electrode is isolated from the wafer to be processed by the polishing layer during the operation of the CMP process.

10. The CMP pad of claim 7 , wherein the film electrode comprises a round shaped component that is concentric to the polishing layer with a diameter smaller than that of the polishing layer.

11. The CMP pad of claim 7 , wherein the first plurality of circular rings and the second plurality of circular rings are configured to be connected to opposite polarities of a power supply.

12. The CMP pad of claim 7 , wherein the first plurality of circular rings and the second plurality of circular rings are in direct contact with the polishing layer.

13. The CMP pad of claim 12 , further comprising a lower conductive layer away from the polishing layer, wherein an insulation layer separates the first plurality of circular rings and the second plurality of circular rings from the lower conductive layer.

14. The CMP pad of claim 13 , wherein the lower conductive layer is integrally coupled to one polarity of a power supply.

15. The CMP pad of claim 7 , wherein the film electrode comprises copper, silver, graphite, or conductive polymer.

16. The CMP pad of claim 7 , wherein the front surface of the polishing layer comprises protruding asperities while the back surface of the polishing layer is planar.

17. A chemical mechanical polishing (CMP) pad, comprising:
a polishing layer attached to a polishing platen and configured to polish a facing down wafer that interacts with a front surface of the polishing layer; and
a film electrode attached to a back surface of the polishing layer opposite to the front surface and configured to apply an electrical field to attract charged abrasive particles towards the polishing layer during a CMP operation;
wherein the film electrode comprises an upper conductive layer close to the polishing layer and a lower conductive layer away from the polishing layer, wherein an insulation layer separates the upper conductive layer from the lower conductive layer.

18. The CMP pad of claim 17 ,
wherein one of the upper conductive layer and the lower conductive layer comprises a round shaped continuous integral that is uniformly pasted onto a central region of the back surface of the polishing layer and is concentric to the polishing layer; and
wherein the other one of the upper conductive layer and the lower conductive layer comprises a first plurality of components and a second plurality of components staggered arranged and connected to opposite polarities of a power supply.

19. The CMP pad of claim 17 ,
a continuous insulation layer covering sidewall and bottom surfaces of the round shaped continuous integral of the film electrode;
wherein the continuous insulation layer has an outer sidewall aligned with an outer sidewall of the polishing layer.

20. The CMP pad of claim 17 , wherein the film electrode is separated from the wafer by the polishing layer.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Liang Chin-Wei
• Kuang Hsun-Chung
• Chu Yen-Chang

Classifications

• H10P95/062

  involving a dielectric removal step · CPC title

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• B24B37/046 Primary

  using electric current · CPC title

• B24B37/34

  Accessories · CPC title