SiC heater

US10966288B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10966288-B2
Application numberUS-201716322425-A
CountryUS
Kind codeB2
Filing dateAug 2, 2017
Priority dateAug 2, 2016
Publication dateMar 30, 2021
Grant dateMar 30, 2021

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

This SiC heater includes a heating element having a thin plate-shaped silicon carbide sintered body and an insulating coat film formed on a surface of the silicon carbide sintered body, a pair of electrodes for conducting electricity in the heating element, and a heater base that holds the heating element from one surface side while insulating the heating element from heat from the heating element, the insulating coat film is located on a surface of the silicon carbide sintered body opposite to the heater base, an electrical resistivity at room temperature of the insulating coat film is 109 Ω·cm or more, a thermal expansion coefficient of the insulating coat film is 2×10−6/K or more and 6×10−6/K or less, SiO2 is included as a matrix, 1% by weight or more and 35% by weight or less of a first additive component including at least one of B2O3 and Al2O3 is contained, and 1% by weight or more and 35% by weight or less of a second additive component including at least one of MgO and CaO is contained.

First claim

Opening claim text (preview).

The invention claimed is: 1. A SiC heater comprising: a heating element comprising a thin plate-shaped silicon carbide sintered body and an insulating coat film formed on a surface of the silicon carbide sintered body; a pair of electrodes for conducting electricity in the heating element; and a heater base that holds the heating element from one surface side while blocking the heat from the heating element, wherein the insulating coat film is located on a surface of the silicon carbide sintered body, the surface being on the reverse side of the heater base-side surface, an electrical resistivity at room temperature of the insulating coat film is 10 9 Ω·cm or more, a thermal expansion coefficient of the insulating coat film is 2×10 −6 /K or more and 6×10 −6 /K or less, the insulating coat film is consisting essentially of a matrix and first and second additive components added to the matrix, the matrix is SiO 2 , the first additive component is one or both of B 2 O 3 and Al 2 O 3 , the second additive component is one, two or three of BaO, MgO and CaO and includes at least one of MgO and CaO, a proportion of the first additive component is 1% by weight or more and 35% by weight or less of a total weight of the insulating coat film, a proportion of the second additive component is 1% by weight or more and 35% by weight or less of the total weight of the insulating coat film. 2. The SiC heater according to claim 1 , wherein the second additive component includes both of MgO, and CaO. 3. The SiC heater according to claim 2 , wherein the second additive component includes all of BaO, MgO, and CaO. 4. The SiC heater according to claim 3 , wherein a total of contents of MgO and CaO of the second additive component is equal to or more than and twice or less than a content of BaO. 5. The SiC heater according to claim 1 , wherein a shape of the heating element is a substantial S shape in a plan view having two slits notched from two facing sides of a substantially square shape or a substantially rectangular shape in a plan view toward opposite sides respectively, and both end portions of the substantial S shape are respectively connected to the pair of electrodes. 6. The SiC heater according to claim 1 , wherein the insulating coat film is made of at least one of borosilicate glass or aluminosilicate glass. 7. The SiC heater according to claim 1 , wherein a proportion of the first additive component is 1% by weight or more and 30% by weight or less of the total weight of the insulating coat film. 8. The SiC heater according to claim 1 , wherein a sintered body density of the silicon carbide sintered body is 2.5 g/cm 3 or more, and an electrical resistivity at 25° C. is 0.1 Ω·cm or more and 100 Ω·cm or less. 9. The SiC heater according to claim 2 , wherein a shape of the heating element is a substantial S shape in a plan view having two slits notched from two facing sides of a substantially square shape or a substantially rectangular shape in a plan view toward opposite sides respectively, and both end portions of the substantial S shape are respectively connected to the pair of electrodes. 10. The SiC heater according to claim 2 , wherein the insulating coat film is made of at least one of borosilicate glass or aluminosilicate glass. 11. The SiC heater according to claim 2 , wherein a proportion of the first additive component is 1% by weight or more and 30% by weight or less of the total weight of the insulating coat film. 12. The SiC heater according to claim 2 , wherein a sintered body density of the silicon carbide sintered body is 2.5 g/cm 3 or more, and an electrical resistivity at 25° C. is 0.1 Ω·cm or more and 100 Ω·cm or less. 13. The SiC heater according to claim 3 , wherein a shape of the heating element is a substantial S shape in a plan view having two slits notched from two facing sides of a substantially square shape or a substantially rectangular shape in a plan view toward opposite sides respectively, and both end portions of the substantial S shape are respectively connected to the pair of electrodes. 14. The SiC heater according to claim 3 , wherein the insulating coat film is made of at least one of borosilicate glass or aluminosilicate glass. 15. The SiC heater according to claim 3 , wherein a proportion of the first additive component is 1% by weight or more and 30% by weight or less of the total weight of the insulating coat film. 16. The SiC heater according to claim 3 , wherein a sintered body density of the silicon carbide sintered body is 2.5 g/cm 3 or more, and an electrical resistivity at 25° C. is 0.1 Ω·cm or more and 100 Ω·cm or less. 17. The SiC heater according to claim 4 , wherein a shape of the heating element is a substantial S shape in a plan view having two slits notched from two facing sides of a substantially square shape or a substantially rectangular shape in a plan view toward opposite sides respectively, and both end portions of the substantial S shape are respectively connected to the pair of electrodes. 18. The SiC heater according to claim 4 , wherein the insulating coat film is made of at least one of borosilicate glass or aluminosilicate glass. 19. The SiC heater according to claim 4 , wherein a proportion of the first additive component is 1% by weight or more and 30% by weight or less of the total weight of the insulating coat film. 20. The SiC heater according to claim 4 , wherein a sintered body density of the silicon carbide sintered body is 2.5 g/cm 3 or more, and an electrical resistivity at 25° C. is 0.1 Ω·cm or more and 100 Ω·cm or less.

Assignees

Inventors

Classifications

  • C03C3/091Primary

    containing aluminium · CPC title

  • the material being non-metallic · CPC title

  • obtained by pressure sintering · CPC title

  • characterised by the composition or nature of the conductive material · CPC title

  • expressed by specific surface values · CPC title

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Frequently asked questions

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What does patent US10966288B2 cover?
This SiC heater includes a heating element having a thin plate-shaped silicon carbide sintered body and an insulating coat film formed on a surface of the silicon carbide sintered body, a pair of electrodes for conducting electricity in the heating element, and a heater base that holds the heating element from one surface side while insulating the heating element from heat from the heating elem…
Who is the assignee on this patent?
Sumitomo Osaka Cement Co Ltd
What technology area does this patent fall under?
Primary CPC classification C03C3/091. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Mar 30 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).