Micromechanical resonator and method for trimming micromechanical resonator

Patent metadata

Field	Value
Publication number	US-10965267-B2
Application number	US-201716314125-A
Country	US
Kind code	B2
Filing date	Jun 29, 2017
Priority date	Jul 1, 2016
Publication date	Mar 30, 2021
Grant date	Mar 30, 2021

Abstract

The present disclosure describes micromechanical resonator, a resonator element for the resonator, and a method for trimming the resonator. The resonator comprises a resonator element having a length, a width, and a thickness, where the length and the width define a plane of the resonator element. The resonator element comprises at least two regions ( 52, 53 ) in the plane of the resonator element, wherein the at least two regions have different thicknesses.

First claim

The invention claimed is:

1. A micromechanical resonator comprising a resonator element having a length, a width, and a thickness, the length and the width defining a plane of the resonator element, wherein the resonator element is a compound comprising
a base layer structure comprising a first layer made of a semiconductor material, and
a second layer on top of the base layer structure, the second layer forming a topmost layer in the resonator element,
wherein
the linear temperature coefficients of the first layer and the second layer have opposite signs, and
the second layer comprises at least two regions in the plane of the resonator element, the at least two regions of the second layer having different thicknesses.

2. A resonator according to claim 1 , wherein the second layer is made of molybdenum or wherein the second layer is in the form of polysilicon deposited on top of the first layer.

3. A resonator according to claim 1 , wherein the resonator element is a monolithic silicon structure, where the first layer and the second layer are in the form of layers with different doping levels within the monolithic silicon structure.

4. A resonator according to claim 1 , wherein the at least two regions comprise
a frequency-adjusting region in a peripheral region of the resonator element in the plane of the resonator.

5. A resonator according to claim 4 , wherein a surface area of the frequency-adjusting region is 20% or less of the total surface area of a cross section of the resonator in the plane of the resonator.

6. A wafer comprising a plurality of micromechanical resonators, wherein the resonators comprise at least one micromechanical resonator according to claim 1 , and wherein at least one thickness of the regions in at least one resonator element of the resonators differs from a thickness of a corresponding region in another resonator so that the thicknesses of the regions are such that they produce essentially the same frequency and/or essentially the same linear temperature coefficients.

7. A wafer according to claim 6 , wherein the variation of the frequencies of the resonators are within a range of −100 ppm to +100 ppm and/or the variation of the linear temperature coefficients of frequency (TCF) of the resonators are within 0.1 ppm/° C. of a desired value.

8. A method for trimming a micromechanical resonator comprising a resonator element having a length, a width, and a thickness, the length and the width defining a plane of the resonator, the resonator element being a compound comprising a base layer structure comprising a first layer made of a semiconductor material and a second layer on top of the base layer structure, the second layer forming a topmost layer in the resonator element, wherein the linear temperature coefficients of the first layer and the second layer have opposite signs, wherein the method comprises
forming at least two regions in the second layer in the plane of the resonator, wherein the at least two regions have different thicknesses, wherein the thicknesses are selected in response to a deviation of a resonator frequency with respect to a target value and/or a deviation of a linear temperature coefficient of the resonator frequency with respect to a target value.

9. A method according to claim 8 , wherein the forming of the at least two regions in the second layer comprises
changing a thickness of at least one portion of the second layer in order to form the at least two regions, wherein a difference between the thicknesses of the at least two regions are adjusted in response to a deviation of a linear temperature coefficient of the resonator element from a desired value.

10. A method according to claim 9 , wherein shapes and positions of the at least two regions are selected such that an effect of the difference between the thickness of the at least two regions on the resonator frequency is minimized.

11. A method according to claim 9 , wherein the method comprises
adding at least a second layer of material on top of a surface of a first, base layer of the resonator element, and
removing matter from the second layer in order to form the at least two regions of the resonator element.

12. A method according to claim 11 , wherein the removing of matter is performed by using laser ablation or ion beam trimming.

13. A method according to claim 8 , wherein the forming of the at least two regions comprises
forming a frequency-adjusting region in a peripheral region of the resonator element in the plane of the resonator, wherein a surface area of the frequency-adjusting region is selected such that said surface area is sufficiently large for reaching any deviation of the resonator frequency within a set deviation range by adjusting a thickness of the frequency-adjusting region, and
adjusting the thickness of the frequency-adjusting region in response to the deviation of the resonator frequency.

Assignees

• Teknologian Tutkimuskeskus Vtt Oy

Inventors

• Jaakkola Antti
• Pensala Tuomas
• Oja Aarne
• Pekko Panu
• Dekker James R

Classifications

• H03H3/0076

  for obtaining desired frequency or temperature coefficients · CPC title

• H03H3/0077

  by tuning of resonance frequency · CPC title

• B81B3/0086

  Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage · CPC title

• H03H9/2447

  Beam resonators (H03H9/2468 takes precedence) · CPC title

• H03H9/02393 Primary

  Post-fabrication trimming of parameters, e.g. resonance frequency, Q factor · CPC title