Perovskite light-emitting device

Patent metadata

Field	Value
Publication number	US-10964896-B2
Application number	US-201916398230-A
Country	US
Kind code	B2
Filing date	Apr 29, 2019
Priority date	Nov 6, 2014
Publication date	Mar 30, 2021
Grant date	Mar 30, 2021

Abstract

Provided are: a light-emitting layer for a perovskite light-emitting device; a method for manufacturing the same; and a perovskite light-emitting device using the same. The method of the present invention for manufacturing a light-emitting layer for a halide perovskite light-emitting device comprises a step of forming a first nanoparticle thin film by coating, on a member for coating a light-emitting layer, a solution comprising halide perovskite nanoparticles including a perovskite nanocrystal structure. Thereby, a nanoparticle light emitter has therein a halide perovskite having a crystal structure in which FCC and BCC are combined; and can show high color purity. In addition, it is possible to improve the luminescence efficiency and luminance of a device by making perovskite as nanoparticles and then introducing the same into a light-emitting layer.

First claim

The invention claimed is:

1. A particle comprising:
one or more nanocrystals of a perovskite having a nanocrystal size greater than 10 nm and smaller than 900 nm that is configured to emit light, wherein the wavelength of the light emitted from the perovskite does not change substantially over the nanocrystal size thereof unlike a quantum dot that substantially changes a wavelength of light emitted therefrom over a nanocrystal size thereof; and
a plurality of ligands attached to the one or more nanocrystals and configured to make the one or more nanocrystals more dispersible than without such ligands in a medium.

2. The particle of claim 1 , wherein the plurality of ligands attached to the one or more nanocrystals surround the one or more nanocrystals.

3. The particle of claim 1 , wherein the plurality of ligands attached to the one or more nanocrystals during particle synthesis are substituted with a plurality of ligands with different chemical structures after synthesis thereof.

4. The particle of claim 1 ,
wherein the perovskite comprises at least one crystal structure selected from the group consisting of ABX 3 , A 2 BX 4 , ABX 4 , and A n−1 B n X 3n+1 (n is an integer ranging from 2 to 6); and
wherein A is at least one selected from the group consisting of organic ammonium, inorganic alkali metal, and a combination thereof, B is at least one metal, and X is at least one halogen.

5. The particle of claim 1 , wherein the size of perovskite nanocrystal is inversely proportional to the length of the ligands attached to the one or more nanocrystals.

6. The particle of claim 1 , wherein the particle was mixed with at least one organic semiconductor.

7. The particle of claim 6 , wherein the organic semiconductor comprises at least one selected from the group consisting of tris(8-quinolinolate) aluminum (Alq3), 3-(Biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole(TAZ), 1,3,5-tris[(3-phenyl-6-tri-fluoromethyl)quinoxaline-2-yl]benzene(TPQ1), 1,3,5-tris[{3-(4-t-butylphenyl)-6-trisfluoromethyl}quinoxaline-2-yl]benzene (TPQ2), 4,7-diphenyl-1,10-phenanthroline(Bphen), Bathocuproine (BCP), Bis(10-hydroxybenzo[h]quinolinato)beryllium (BeBq 2 ), Bis(8-hydroxy-2-methylquinoline)-(4-phenylphenoxy)aluminum(BAlq), 4,4′-N, N′-dicarbazole-biphenyl) (CBP), 9,10-di(naphthalen-2-yl) anthracene (ADN), tris(N-carbazolyl) triphenylamine) (TCTA), 1,3,5-tris (N-phenylbenzimidazole-2-yl) benzene (TPBI), 3-tert-butyl-9,10-di (naphth-2-yl) anthracene (TBADN), and terfluorene (E3).

8. The particle of claim 1 , wherein the plurality of ligands comprises alkyl halides, carboxylic acid, acetic acid, 5-aminosalicylic acid, an acrylic acid, L-aspentic acid, 6-bromohexanoic acid, a bromoacetic acid, a dichloro acetic acid, ethylenediaminetetraacetic acid, isobutyric acid, itaconic acid, maleic acid, r-maleimidobutyric acid, L-malic acid, 4-Nitrobenzoic acid, 1-pyrenecarboxylic acid, oleic acid, surfactant, acid alcohol, 3-mercaptopropionic acid, trioctylphosphine and trioctylphosphine oxide, crosslinking agent, p-substituted aniline, alkylamine, oleylamine, hexadecyl amine, 9-Octadecenylamine, 1-Amino-9-octadecene, phenyl ammonium, and fluorine ammonium, and octadecyltrichlorosilane.

9. The particle of claim 8 , wherein the crosslinking agent includes at least one functional group selected from the group consisting of an amine group (—NH 2 ), a thiol group (—SH), and a carboxyl group and include at least one selected from the group consisting of a bis(phenyl azide)-based material, a diaminoalkane-based material, a dithiol-based material, dicarboxylate, an ethylene glycol di(meth)acrylate derivative, a methylenebisacrylamide derivative, and divinylbenzene (DVB).

10. A light emitting device comprising:
a first electrode and a second electrode stacked on a substrate;
a light emitting layer disposed between the first electrode and the second electrode, the light emitting layer comprising the first thin film of the particle of claim 1 , which comprises a perovskite nanocrystal structure.

11. The light emitting device of claim 10 ,
wherein the substrate has the transparent or flexible properties.

12. The light emitting device of claim 11 ,
wherein the substrate comprises one least one selected from a group consisting of poly(ethylene terephthalate)(PET), polystyrene (PS), polyimide (PI), poly(vinyl chloride)(PVC), Polyvinylpyrrolidone (PVP), and polyethylene(PE).

13. The light emitting device of claim 10 , further comprising an exciton buffer layer disposed between the first electrode and the light emitting layer,
wherein the exciton buffer layer comprises a conductive material and a fluorine-based material having surface energy less than that of the conductive material.

14. The light emitting device of claim 13 ,
further comprising a surface buffer layer disposed between the exciton buffer layer and the light emitting layer;
wherein the surface buffer layer comprises at least one additive selected from the group consisting of carbon nanotubes, graphenes, reduced oxide graphenes, metal nanowires, metal carbon nanotubes, semiconductor quantum dots, semiconductor nanowires, and metal nano dots,
wherein the surface buffer layer further includes a crosslinking agent comprising a bis(phenyl azide) material.

15. The light emitting device of claim 13 ,
wherein the fluorine-based material comprises a perfluorinated ionomer or a fluorinated ionomer containing at least one F.

16. The light emitting device of claim 13 ,
wherein the conductive material comprises at least one selected from the group consisting of a conductive polymer, metallic carbon nanotube, graphene, reduced graphene oxide, metal nanowire, semiconductor nanowire, metal grid, metal nano dots, and conductive oxide.

17. The light emitting device of claim 16 ,
wherein the conductive polymer comprises at least one selected from the group consisting of polythiophene, polyaniline, polypyrrole, polystyrene, sulfonated polystyrene, poly(3,4-ethylenedioxythiophene), self-doped conductive polymers, and derivatives thereof.

18. A light emitting layer comprising:
a light emitting layer coating member; and
a light emitting layer disposed on the light emitting layer coating member and comprising a first thin film of the particle, which comprises a perovskite nanocrystal structure of claim 1 , wherein the light emitting layer coating member comprises at least one layer selected from the group consisting of a substrate, an electrode and a semiconductor.

19. The light emitting layer of claim 9 , wherein the first thin film of the particle has a multilayer structure.

20. The light emitting layer of claim 9 , wherein a second thin film of perovskite comprising the perovskite crystal structure or their particles is more disposed between the light emitting layer coating member and the first thin film of the particle or on the first thin film of the particle.

Assignees

• Postech Acad Ind Found
• Sn Display Co Ltd

Inventors

• Lee Tae-Woo
• Im Sanghyuk
• Cho Himchan
• Kim Young-Hoon

Classifications

• H10K50/81

  Anodes · CPC title

• H10K50/18

  Carrier blocking layers · CPC title

• H10K30/353

  comprising blocking layers, e.g. exciton blocking layers · CPC title

• H10K30/35

  comprising inorganic nanostructures, e.g. CdSe nanoparticles · CPC title

• H10F99/00

  Subject matter not provided for in other groups of this subclass · CPC title