Bonding method

Patent metadata

Field	Value
Publication number	US-10964882-B2
Application number	US-201816135689-A
Country	US
Kind code	B2
Filing date	Sep 19, 2018
Priority date	Mar 25, 2016
Publication date	Mar 30, 2021
Grant date	Mar 30, 2021

Abstract

A bonding layer 3 is formed over a piezoelectric material substrate, and the bonding layer is made of one or more materials selected from the group consisting of silicon nitride, aluminum nitride, alumina, tantalum pentoxide, mullite, niobium pentoxide and titanium oxide. A neutralized beam is irradiated onto a surface of the bonding layer and a surface of a supporting body to activate the surface of the bonding layer and the surface of the supporting body. The surface of the bonding layer and the surface of the supporting body are bonded by direct bonding.

First claim

The invention claimed is:

1. A method of bonding a piezoelectric material substrate and a supporting body comprising a single crystal, said method comprising the steps of:
providing a film consisting of silicon oxide on said piezoelectric material substrate;
forming a bonding layer on said silicon oxide film, said bonding layer consisting of one or more materials selected from the group consisting of aluminum nitride, alumina, tantalum pentoxide, mullite, niobium pentoxide and titanium oxide;
flattening a surface of said bonding layer by polishing said surface of said bonding layer to a surface roughness Ra of 1 nm or lower;
emitting a neutralized atomic beam from a high speed atomic beam source, wherein said neutralized atomic beam is generated from an ion beam composed of atoms of an inert gas that is neutralized at a grid within said high speed atomic source; and
irradiating said neutralized atomic beam onto said surface of said bonding layer and a surface of said supporting body to activate said surface of said bonding layer and said surface of said supporting body; and
bonding said surface of said bonding layer and said surface of said supporting body by direct bonding.

2. The method of claim 1 , further comprising a step of processing said piezoelectric material substrate to form a roughened surface, wherein said silicon oxide film and said bonding layer are provided on said roughened surface.

3. The method of claim 1 , wherein said surface of said bonding layer is activated after said surface of said bonding layer is flattened.

4. The method of claim 1 , wherein said supporting body comprises a material selected from the group consisting of silicon, sapphire and quartz.

5. The method of claim 1 , wherein said piezoelectric material substrate comprises a piezoelectric single crystal.

6. The method of claim 5 , wherein said piezoelectric single crystal comprises lithium niobate, lithium tantalate or lithium niobate-lithium tantalate solid solution.

Assignees

• Ngk Insulators Ltd

Inventors

• Tai Tomoyoshi
• Hori Yuji
• Asai Keiichiro
• Yoshino Takashi
• Goto Masashi
• Namerikawa Masahiko

Classifications

• H10W72/30

  Die-attach connectors · CPC title

• H10N30/073

  by fusion of metals or by adhesives · CPC title

• H03H9/02574 Primary

  of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate · CPC title

• H10N30/086

  by polishing or grinding · CPC title

• H10N30/093 Primary

  Forming inorganic materials · CPC title