Semiconductor device

Patent metadata

Field	Value
Publication number	US-10964688-B2
Application number	US-201615764397-A
Country	US
Kind code	B2
Filing date	Sep 27, 2016
Priority date	Oct 1, 2015
Publication date	Mar 30, 2021
Grant date	Mar 30, 2021

Abstract

A semiconductor device 100 has a power transistor N1 of vertical structure and a temperature detection element 10a configured to detect abnormal heat generation by the power transistor N1. The power transistor N1 includes a first electrode 208 formed on a first main surface side (front surface side) of a semiconductor substrate 200, a second electrode 209 formed on a second main surface side (rear surface side) of the semiconductor substrate 200, and pads 210a-210f positioned unevenly on the first electrode 208. The temperature detection element 10a is formed at a location of the highest heat generation by the power transistor N1, the location (near the pad 210b where it is easiest for current to be concentrated) being specified using the uneven positioning of the pads 210a-210f.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a power transistor with a vertical structure; and
a temperature sensing element configured to detect abnormal heat generation in the power transistor,
wherein
the power transistor includes:
a first electrode formed on a first-principle-face side of a semiconductor substrate;
a second electrode formed on a second-principle-face side of the semiconductor substrate; and
at least one pad located upon the first electrode in a thickness direction of the semiconductor device so as to be connected to the first electrode electrically and arranged in a lopsided manner on the first electrode, and

the temperature sensing element is formed at a most heat-generating spot in the power transistor that is identified by lopsided arrangement of the pad.

2. The semiconductor device according to claim 1 , wherein
the at least one pad comprises a plurality of pads, and
the pads are arranged in a lopsided manner such that one pad on which current tends to concentrate most is uniquely identifiable.

3. The semiconductor device according to claim 2 , wherein
the plurality of pads are arranged in a lopsided manner on the first electrode such that current concentrates most at a corner of a pad, among the plurality of pads, that is closest to a temperature protection circuit.

4. The semiconductor device according to claim 3 , wherein
the temperature sensing element is disposed in a vicinity of the corner.

5. The semiconductor device according to claim 3 , wherein
the temperature sensing element is arranged along, of a plurality of directions pointing from the corner to edges of the first electrode, a direction along which a distance from the corner to an edge is longer.

6. The semiconductor device according to claim 3 , wherein
the plurality of pads comprises a main pad and a sub pad, the sub pad being smaller than the main pad.

7. The semiconductor device according to claim 1 , wherein
the at least one pad comprises one pad, and
the pad is arranged in a lopsided manner such that a current density distribution around the pad is lopsided in a particular direction.

8. The semiconductor device according to claim 1 , wherein
the second electrode is a substrate electrode for applying a supply voltage to the semiconductor substrate.

9. The semiconductor device according to claim 8 , further comprising:
a power line formed on the first-principle-face side of the semiconductor substrate; and
a via connecting between the substrate electrode and the power line.

10. The semiconductor device according to claim 1 , wherein
the power transistor functions as a high-side switch of which the first electrode is connected to a load and of which the second electrode is connected to a power terminal.

11. The semiconductor device according to claim 1 , wherein
the power transistor is configured to function as a low-side switch of which the first electrode is connected to a ground terminal and of which the second electrode is connected to a load.

12. The semiconductor device according to claim 1 , wherein
the first electrode has formed therein a slit through which a conductor from the temperature sensing element is led up to an edge of the first electrode.

13. The semiconductor device according to claim 12 , wherein
the temperature sensing element is disposed in a vicinity of the at least one pad, and
the slit is formed to extend in a direction opposite to the at least one pad.

14. The semiconductor device according to claim 1 , further comprising:
a temperature protection circuit configured to forcibly turn OFF the power transistor when the temperature sensing element detects abnormal heat generation in the power transistor.

15. An electronic appliance comprising:
the semiconductor device according to claim 14 .

16. A vehicle comprising:
a battery; and
the electronic appliance according to claim 15 , the electronic appliance operating by being fed with a supply voltage from the battery.

Assignees

• Rohm Co Ltd

Inventors

• Takahashi Naoki

Classifications

• H10W72/9445

  Top-view layouts, e.g. mirror arrays · CPC title

• H10W72/926

  Multiple bond pads having different sizes · CPC title

• H10W40/00

  Arrangements for thermal protection or thermal control (integrated devices comprising arrangements for thermal protection H10D89/60) · CPC title

• H10D84/00

  Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers · CPC title

• H10D84/0126

  the components including insulated gates, e.g. IGFETs · CPC title