Pressure sensor generating a transduced signal with reduced ambient temperature dependence, and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-10962431-B2
Application number	US-201816220498-A
Country	US
Kind code	B2
Filing date	Dec 14, 2018
Priority date	Jun 22, 2015
Publication date	Mar 30, 2021
Grant date	Mar 30, 2021

Abstract

A pressure sensor designed to detect a value of ambient pressure of the environment external to the pressure sensor includes: a first substrate having a buried cavity and a membrane suspended over the buried cavity; a second substrate having a recess, hermetically coupled to the first substrate so that the recess defines a sealed cavity the internal pressure value of which provides a pressure-reference value; and a channel formed at least in part in the first substrate and configured to arrange the buried cavity in communication with the environment external to the pressure sensor. The membrane undergoes deflection as a function of a difference of pressure between the pressure-reference value in the sealed cavity and the ambient-pressure value in the buried cavity.

First claim

The invention claimed is:

1. A method, comprising:
forming, in a first semiconductor body, a buried cavity and a membrane suspended over the buried cavity;
forming, in a second semiconductor body, a recess;
coupling the second semiconductor body to the first semiconductor body so that the recess faces the membrane, thus defining a sealed cavity having an internal pressure value that provides a pressure-reference value; and
forming a channel at least in part in the first semiconductor body and in fluidic communication with the buried cavity.

2. The method according to claim 1 , further comprising forming a transducer assembly in a surface region of the membrane facing inside of the sealed cavity, the transducer assembly being configured to generate a transduced electrical signal as a function of a deflection of the membrane.

3. The method according to claim 1 , wherein forming the buried cavity and forming the channel in the first semiconductor body are performed simultaneously.

4. The method according to claim 1 , wherein forming the channel comprises:
etching the first semiconductor body as partial prolongation of the buried cavity, in a same plane as the buried cavity; and
cutting the first semiconductor body for exposing the channel at a side wall, orthogonal to the plane, of the first semiconductor body.

5. The method according to claim 1 , wherein forming the channel comprises:
etching the first semiconductor body as partial prolongation of the buried cavity in a first direction belonging to a plane of the buried cavity, to form a first subchannel; and
etching the first semiconductor body in a second direction orthogonal to the first direction, for connecting the first subchannel fluidically with a side of the first semiconductor body exposed towards an external environment, to form a second subchannel.

6. The method according to claim 5 , wherein manufacturing includes:
forming a coupling region that surrounds the membrane completely; and
hermetically coupling together the first and second semiconductor bodies via the coupling region, wherein forming the second subchannel comprises etching the first semiconductor body outside the coupling region.

7. The method according to claim 1 , wherein forming the channel comprises:
etching the first semiconductor body as partial prolongation of the buried cavity, along a first direction belonging to a plane of the buried cavity, to form a first subchannel;
etching the first semiconductor body along a second direction orthogonal to the first direction, for connecting the first subchannel fluidically with a side of the first semiconductor body facing the second semiconductor body, to form a second subchannel; and
etching the second semiconductor body to form a through hole fluidically connected to the buried cavity via the first and second subchannels.

8. The method according to claim 7 , wherein manufacturing includes:
forming a coupling region that surrounds the membrane completely;
forming a through hole in the coupling region; and
hermetically coupling together the first and second semiconductor bodies via the coupling region, wherein forming the second subchannel comprises etching the first and second semiconductor bodies in an area corresponding to the through hole of the coupling region.

9. The method according to claim 1 wherein forming the membrane and the buried cavity comprise:
etching first trenches in the first semiconductor body, the first trenches delimiting between them first walls of semiconductor material;
growing epitaxially, starting from the first walls, a closing layer of semiconductor material, said closing layer closing the first trenches at the top to form the membrane; and
carrying out a thermal treatment such as to cause migration of the semiconductor material of the first walls and forming the buried cavity.

10. The method according to claim 9 , wherein:
forming the channel comprises etching second trenches in the first semiconductor body, as partial prolongation of the first trenches, the second trenches delimiting between them second walls of semiconductor material;
growing the closing layer epitaxially further comprises closing the second trenches at the tops of the second trenches; and
carrying out the thermal treatment further comprises causing migration of the semiconductor material of the second walls and forming the channel.

11. A method, comprising:
forming a first group of discrete recesses on a first surface of a first substrate of a first material, the first group of discrete recesses arranged within a first area of the first surface and being separated from one another by a first substrate column;
forming a layer over the first surface and covering the first group of discrete recesses and the first substrate column;
after the forming the layer, forming a buried cavity in the first substrate by annealing the first substrate such that the first substrate column at least partially dissolves due to atoms of the first material migrating;
forming a recess on a second surface of a second substrate, the recess having an opening at the second surface, the opening having a size that is larger than the first area;
coupling the second surface of the second substrate with the first surface of the first substrate such that the opening of the recess is fully overlapped by the first substrate and such that the opening of the recess overlaps the first area; and
forming a channel at least in part in the first substrate and in fluidic communication with the buried cavity.

12. The method of claim 11 , wherein the forming the layer is conducted in a deoxidizing environment.

13. The method of claim 12 , wherein the deoxidizing environment includes hydrogen.

14. The method of claim 13 , wherein the forming the layer traps the hydrogen of the deoxidizing environment within the first group of discrete recesses covered by the layer.

15. The method of claim 14 , wherein the annealing is conducted in a hydrogen containing environment.

16. The method of claim 11 , wherein the layer includes a same first material as the first substrate.

17. The method of claim 11 , further comprising:
forming a second group of discrete recesses on a second area of the first surface that is adjacent to the first area, the second group of discrete recesses being separated from one another by a second substrate column, the second group of discrete recesses being separated from one or more discrete recess in the first group of discrete recesses by a third substrate column, and
wherein the annealing the first substrate at least partially dissolves the second substrate column and the third substrate column such that a first channel is formed through the second group of recesses which communicates with a buried space formed through the first substrate column at least partially dissolving.

18. The method of claim 17 , further comprising forming a second channel through the second substrate and connecting to the first channel.

19. A method, comprising:
coupling a first substrate with a second substrate, the first substrate having a buried cavity underneath a membrane on a first surface of the first substrate, the buried cavity being fully encapsulated, the second substrate having a recess opening only through a second surface of the second substrate, the first surface facing the second surface, and the recess fully encapsulated at least partially by the first substrate; and
after the coupling, opening a channel in fluidic communication with the buried cavity.

Assignees

• St Microelectronics Srl

Inventors

• Duqi Enri
• Conti Sebastiano
• Costantini Sonia

Classifications

• B81B2201/0264

  Pressure sensors · CPC title

• B81B7/0061

  suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound · CPC title

• B81C2201/0116

  Thermal treatment for structural rearrangement of substrate atoms, e.g. for making buried cavities · CPC title

• G01L9/0054 Primary

  integral with a semiconducting diaphragm · CPC title

• G01L9/065

  with temperature compensating means (non electric temperature compensating means G01L19/04) · CPC title