Interconnect bump structures for photo detectors

Patent metadata

Field	Value
Publication number	US-10957733-B2
Application number	US-202016902318-A
Country	US
Kind code	B2
Filing date	Jun 16, 2020
Priority date	Sep 12, 2018
Publication date	Mar 23, 2021
Grant date	Mar 23, 2021

Abstract

A method of assembling a photodetector assembly includes depositing bumps on a read out integrated circuit (ROIC) without depositing bumps on a photodiode array (PDA). The method includes assembling the PDA and ROIC together wherein each bump electrically interconnects the ROIC with a respective contact of the PDA. A photodetector assembly includes a PDA. A ROIC is assembled to the PDA, wherein the ROIC is electrically interconnected with the PDA through a plurality of electrically conductive bumps. Each bump is confined within a respective pocket between the ROIC and a respective contact of the PDA. The disclosed methods can enable focal plane array manufacturers to achieve low-cost production of ultra-fine pitch, large format imaging arrays.

First claim

What is claimed is:

1. A method of assembling a photodetector assembly comprising:
depositing bumps on a read out integrated circuit (ROIC) without depositing bumps on a photodiode array (PDA); and
assembling the PDA and ROIC together wherein each bump electrically interconnects the ROIC with a respective contact of the PDA, wherein assembling the PDA to the ROIC includes confining each bump in a respective pocket between the ROIC and the respective contact of the PDA, further comprising plasma treating the PDA and ROIC to remove local oxidation on contacts of the PDA and ROIC, wherein plasma treating the PDA and ROIC includes adjusting the surface polarity of a dielectric outer surface sub-layer of a sidewall passivation layer of the PDA and ROIC to reduce wettability of bump material to the dielectric sub-layer.

2. The method as recited in claim 1 , wherein depositing bumps on the ROIC includes using evaporation to deposit the bumps, wherein the bumps include indium.

3. The method as recited in claim 1 , wherein depositing the bumps on the ROIC includes keeping the bumps under a dimension of 11.tm in a direction from the ROIC toward the PDA.

4. The method as recited in claim 1 , wherein assembling the PDA and ROIC together includes reflow of the PDA and/or ROIC to achieve intermetallic bonding between the ROIC, the contacts, and the bumps, so traditional high press pressure for hybridization is avoided.

5. The method as recited in claim 1 , wherein confining each bump in the respective pocket results in no bump material flowing out of the respective pocket.

6. A method of assembling a photodetector assembly comprising:
depositing bumps on a read out integrated circuit (ROIC) without depositing bumps on a photodiode array (PDA); and
assembling the PDA and ROIC together wherein each bump electrically interconnects the ROIC with a respective contact of the PDA, wherein assembling the PDA to the ROIC includes confining each bump in a respective pocket between the ROIC and the respective contact of the PDA, wherein the bumps are completely enclosed by a passivation layer edge and a sidewall passivation layer edge surrounding a lateral perimeter of each bump and an opposed substrate assembly, and a respective contact enclosing a top and a bottom of the respective pocket.

7. The method as recited in claim 6 , wherein depositing bumps on the ROIC includes using evaporation to deposit the bumps, wherein the bumps include indium.

8. The method as recited in claim 6 , wherein depositing the bumps on the ROIC includes keeping the bumps under a dimension of 11.tm in a direction from the ROIC toward the PDA.

9. The method as recited in claim 6 , wherein assembling the PDA and ROIC together includes reflow of the PDA and/or ROIC to achieve intermetallic bonding between the ROIC, the contacts, and the bumps, so traditional high press pressure for hybridization is avoided.

10. The method as recited in claim 6 , further comprising:
plasma treating the PDA and ROIC to remove local oxidation on contacts of the PDA and ROIC.

11. The method as recited in claim 6 , wherein confining each bump in the respective pocket results in no bump material flowing out of the respective pocket.

Assignees

• Sensors Unlimited Inc

Inventors

• Zhang Wei
• Malchow Douglas Stewart
• Evans Michael J
• Huang Wei
• Bereznycky Paul L
• Paik Namwoong

Classifications

• H10W72/07252

  changes in structures or sizes · CPC title

• H10W72/07236

  Soldering or alloying · CPC title

• H10W72/01271

  Cleaning, e.g. oxide removal or de-smearing · CPC title

• H10W72/01238

  in gaseous form, e.g. by CVD or PVD · CPC title

• H10W72/287

  Flow barriers · CPC title