Semiconductor device package and manufacturing method thereof
US-9966300-B1 · May 8, 2018 · US
US10957649B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10957649-B2 |
| Application number | US-201616329080-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 30, 2016 |
| Priority date | Sep 30, 2016 |
| Publication date | Mar 23, 2021 |
| Grant date | Mar 23, 2021 |
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Official abstract text for this publication.
A system in package device includes an overpass die on a package substrate and the overpass die includes a recess on the back side in order to straddle a landed die also on the package substrate. The recess is bounded by at least two overpass walls. Communication between the dice is done with a through-silicon via and communication between the overpass die and the package substrate is also done with a through-silicon via.
Opening claim text (preview).
The invention claimed is: 1. A system in package comprising: an overpass first die disposed on a package substrate, wherein the overpass first die includes an active surface and a backside surface, wherein the backside surface is connected to the package substrate by a through-silicon via (TSV) and a backside bump, and wherein the overpass first die includes a first recess in the backside surface that is bounded by at least two overpass walls; and a landed first die disposed on the package substrate, wherein the overpass first die straddles the landed first die at the first recess, and wherein the landed first die is flip-chip mounted on the package substrate, and wherein the overpass first die and the landed first die are coupled by a TSV that communicates into the first recess. 2. The system in package device of claim 1 , further including a landed first die disposed on the package substrate, wherein the overpass first die straddles the landed first die at the first recess. 3. The system in package device of claim 1 , further including a second recess in the overpass first die, and wherein the second recess opens the backside surface and is also bounded by at least two overpass walls. 4. The system in package device of claim 1 , further including a second recess in the overpass first die, and wherein the second recess opens the backside surface and is also bounded by at least two overpass walls, further including a landed first die disposed on the package substrate, wherein the overpass first die straddles the landed first die at the first recess. 5. The system in package device of claim 1 , further including a second recess in the overpass first die, and wherein the second recess opens the backside surface and is also bounded by at least two overpass walls, further including a landed first die disposed on the package substrate, wherein the overpass first die straddles the landed first die at the first recess, and further including a landed subsequent die disposed on the package substrate, wherein the overpass first die straddles the landed subsequent die at the second recess. 6. The system in package device of claim 1 , further including an overpass subsequent die disposed on the package substrate, the overpass subsequent die including a subsequent recess. 7. The system in package device of claim 1 , further including an overpass subsequent die disposed on the package substrate, the overpass subsequent die including a subsequent recess, further including a landed first die disposed on the package substrate, wherein the overpass first die straddles the landed first die at the first recess. 8. The system in package device of claim 1 , further including an overpass subsequent die disposed on the package substrate, the overpass subsequent die including a subsequent recess, further including a landed first die disposed on the package substrate, wherein the overpass first die straddles the landed first die at the first recess, and wherein the overpass subsequent die also straddles the landed first die at the subsequent recess. 9. The system in package device of claim 1 , further including: an overpass subsequent die disposed on the package substrate, the overpass subsequent die including a subsequent recess; a landed first die disposed on the package substrate, wherein the overpass first die straddles the landed first die at the first recess, wherein the overpass subsequent die also straddles the landed first die at the subsequent recess; and a landed subsequent die disposed on the package substrate, wherein the landed subsequent die is straddled by the overpass first die at a second recess. 10. The system in package device of claim 1 , further including: an overpass subsequent die disposed on the package substrate, the overpass subsequent die including a subsequent recess; and an overpass third die disposed on the package substrate, the overpass third die including a third die recess. 11. The system in package device of claim 1 , further including: an overpass subsequent die disposed on the package substrate, the overpass subsequent die including a subsequent recess; a landed first die disposed on the package substrate, wherein the overpass first die straddles the landed first die at the first recess, wherein the overpass subsequent die also straddles the landed first die at the subsequent recess; a landed subsequent die disposed on the package substrate, wherein the landed subsequent die is straddled by the overpass first die at a second recess; and a landed third die disposed on the package substrate, and wherein the landed third die is also straddled by one of the respective overpass first die and overpass subsequent die. 12. The system in package device of claim 1 , wherein the overpass first die includes the first recess, a second recess and a third recess, all recesses of which open the overpass die backside surface. 13. The system in package device of claim 1 , wherein the overpass first die functions principally as a semiconductive bridge. 14. A system in package device comprising: a landed first die that is flip-chip disposed on a package substrate; an overpass first die disposed on the package substrate, wherein the overpass first die includes an active surface and a backside surface, wherein the backside surface is connected to the package substrate by a through-silicon via (TSV) and a backside bump, wherein the overpass first die includes a first recess in the backside surface that is bounded by at least two overpass walls, and wherein the overpass first die and the landed first die are coupled by a TSV that communicates into the first recess; and a component mounted on the package substrate, wherein the component is coupled to at least one of the overpass first die and the landed first die through a connection within the package substrate, and wherein the component, is selected from one of the group consisting of a semiconductive device, and a passive device. 15. The system in package device of claim 14 , further including a second recess in the overpass first die, and wherein the second recess opens the backside surface and is also bounded by at least two overpass walls. 16. The system in package device of claim 14 , further including a second recess in the overpass first die, and wherein the second recess opens the backside surface and is also bounded by at least two overpass walls, wherein the overpass first die straddles the landed first die at the first recess. 17. The system in package device of claim 14 further including a second recess in the overpass first die, and wherein the second recess opens the backside surface and is also bounded by at least two overpass walls, wherein the overpass first die straddles the landed first die at the first recess, and further including a landed subsequent die disposed on the package substrate, wherein the overpass first die straddles the landed subsequent die at the second recess. 18. The system in package device of claim 14 , further including an overpass subsequent die disposed on the package substrate, the overpass subsequent die including a subsequent recess. 19. The system in package device of claim 14 , further including an overpass subsequent die disposed on the package substrate, the overpass subsequent die including a subsequent recess, wherein the overpass first die straddles the landed first die at the first recess. 20. The system in package device of claim 14 , further including overpass subsequent die disposed on the package substrate, the ove
between a chip and a stacked insulating package substrate, interposer or RDL · CPC title
between stacked chips · CPC title
characterised by the relative positions of pads or connectors relative to package parts · CPC title
characterised by the through-semiconductor vias [TSVs] in the stacked chips · CPC title
Configurations of stacked chips · CPC title
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