Method and apparatus for angular-resolved spectroscopic lithography characterization
US-10241055-B2 · Mar 26, 2019 · US
US10955353B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10955353-B2 |
| Application number | US-201916270155-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 7, 2019 |
| Priority date | Aug 16, 2004 |
| Publication date | Mar 23, 2021 |
| Grant date | Mar 23, 2021 |
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An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.
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The invention claimed is: 1. A method, comprising: placing a wavelength multiplexer between a radiation source and a substrate; placing a wavelength demultiplexer between the substrate and a detector located in a pupil plane of a high numerical aperture lens; directing a radiation beam from the radiation source toward the substrate; detecting, using the detector, an angle-resolved spectrum of the radiation beam reflected from a surface of the substrate; and measuring asymmetries between intensities of corresponding diffraction orders in the reflected angle-resolved spectrum to measure a property of the substrate. 2. The method of claim 1 , wherein the measuring comprises measuring at least one of: an intensity of a transverse magnetic and a transverse electric polarized light, and a phase difference between the transverse magnetic and the transverse electric polarized light. 3. The method of claim 1 , further comprising: coupling off a portion of the radiation beam emitted from the radiation source for a separate measurement. 4. A method, comprising: placing a knife edge in one of opposite halves of an intermediate object plane associated with a lens; directing, using the lens, a radiation beam from a radiation source toward a pattern formed on a substrate; and measuring asymmetries between intensities of corresponding diffraction orders in an angle-resolved spectrum of a radiation beam diffracted from the pattern, at a plurality of angles and a plurality of wavelengths substantially simultaneously to measure a property of the substrate. 5. The method of claim 4 , wherein the measuring asymmetries comprises measuring at least one of: an intensity of a transverse magnetic and a transverse electric polarized light, and a phase difference between the transverse magnetic and the transverse electric polarized light. 6. The method of claim 4 , further comprising: coupling off a portion of the radiation beam emitted from the radiation source for a separate measurement. 7. A method, comprising: placing a wavelength multiplexer between a radiation source and a substrate; placing a wavelength demultiplexer between the substrate and a detector located in a pupil plane of a high numerical aperture lens; placing a knife edge in one of opposite halves of an intermediate object plane associated with the high numerical aperture lens; directing, using the high numerical aperture lens, a radiation beam from the radiation source toward the substrate; and measuring, using the detector, an asymmetry in an angle-resolved spectrum of a radiation beam reflected from a surface of the substrate, at a plurality of angles and a plurality of wavelengths substantially simultaneously to measure a property of the substrate.
Irradiation branch, e.g. optical system details, illumination mode or polarisation control · CPC title
Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection · CPC title
Leveling · CPC title
Defects, e.g. optical inspection of patterned layer for defects · CPC title
Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching · CPC title
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