Method and apparatus for angular-resolved spectroscopic lithography characterization

US10955353B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10955353-B2
Application numberUS-201916270155-A
CountryUS
Kind codeB2
Filing dateFeb 7, 2019
Priority dateAug 16, 2004
Publication dateMar 23, 2021
Grant dateMar 23, 2021

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  5. First independent claim

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Abstract

Official abstract text for this publication.

An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.

First claim

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The invention claimed is: 1. A method, comprising: placing a wavelength multiplexer between a radiation source and a substrate; placing a wavelength demultiplexer between the substrate and a detector located in a pupil plane of a high numerical aperture lens; directing a radiation beam from the radiation source toward the substrate; detecting, using the detector, an angle-resolved spectrum of the radiation beam reflected from a surface of the substrate; and measuring asymmetries between intensities of corresponding diffraction orders in the reflected angle-resolved spectrum to measure a property of the substrate. 2. The method of claim 1 , wherein the measuring comprises measuring at least one of: an intensity of a transverse magnetic and a transverse electric polarized light, and a phase difference between the transverse magnetic and the transverse electric polarized light. 3. The method of claim 1 , further comprising: coupling off a portion of the radiation beam emitted from the radiation source for a separate measurement. 4. A method, comprising: placing a knife edge in one of opposite halves of an intermediate object plane associated with a lens; directing, using the lens, a radiation beam from a radiation source toward a pattern formed on a substrate; and measuring asymmetries between intensities of corresponding diffraction orders in an angle-resolved spectrum of a radiation beam diffracted from the pattern, at a plurality of angles and a plurality of wavelengths substantially simultaneously to measure a property of the substrate. 5. The method of claim 4 , wherein the measuring asymmetries comprises measuring at least one of: an intensity of a transverse magnetic and a transverse electric polarized light, and a phase difference between the transverse magnetic and the transverse electric polarized light. 6. The method of claim 4 , further comprising: coupling off a portion of the radiation beam emitted from the radiation source for a separate measurement. 7. A method, comprising: placing a wavelength multiplexer between a radiation source and a substrate; placing a wavelength demultiplexer between the substrate and a detector located in a pupil plane of a high numerical aperture lens; placing a knife edge in one of opposite halves of an intermediate object plane associated with the high numerical aperture lens; directing, using the high numerical aperture lens, a radiation beam from the radiation source toward the substrate; and measuring, using the detector, an asymmetry in an angle-resolved spectrum of a radiation beam reflected from a surface of the substrate, at a plurality of angles and a plurality of wavelengths substantially simultaneously to measure a property of the substrate.

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Classifications

  • Irradiation branch, e.g. optical system details, illumination mode or polarisation control · CPC title

  • Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection · CPC title

  • Leveling · CPC title

  • Defects, e.g. optical inspection of patterned layer for defects · CPC title

  • Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching · CPC title

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What does patent US10955353B2 cover?
An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.
Who is the assignee on this patent?
Asml Netherlands Bv
What technology area does this patent fall under?
Primary CPC classification G03F7/70341. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Mar 23 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).