Semiconductor nanocrystal, and method of preparing the same

Patent metadata

Field	Value
Publication number	US-10950741-B2
Application number	US-201816234694-A
Country	US
Kind code	B2
Filing date	Dec 28, 2018
Priority date	Oct 26, 2012
Publication date	Mar 16, 2021
Grant date	Mar 16, 2021

Abstract

A nanocrystal including a core including a Group III element and a Group V element, and a monolayer shell on the surface of the core, the shell including a compound of the formula ZnSexS(1-x), wherein 0≤x≤1, and wherein an average mole ratio of Se:S in the monolayer shell ranges from about 2:1 to about 20:1.

First claim

What is claimed is:

1. A nanocrystal comprising:
a core comprising a Group III element, and a Group V element; and
a shell overcoating the core and comprising ZnSeS multi-layers comprising Zn, Se, and S,
wherein each of the ZnSeS multi-layers of the shell comprises a compound of the formula ZnSe y S (1-y) , wherein 0≤y≤1, and
wherein the ZnSeS multi-layers have a Se:S concentration ratio gradient, wherein the Se:S concentration ratio gradient comprises an increasing concentration of Se and a decreasing concentration of S in a direction from the core to a predetermined monolayer; and a decreasing concentration of Se and an increasing concentration of S in a direction from the predetermined monolayer to an outermost monolayer, wherein the predetermined monolayer is located between a first monolayer directly disposed on a surface of the core and the outermost monolayer.

2. The nanocrystal of claim 1 , wherein an average ratio of y:(1−y) ranges from about 5:1 to about 20:1 in the first monolayer directly disposed on the surface of the core.

3. The nanocrystal of claim 1 , wherein the core further comprises a Group II metal.

4. The nanocrystal of claim 1 , wherein the core comprises a compound selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, and InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, AlGaN, AlGaP, AlGaAs, AlGaSb, InGaN, InGaP, InGaAs, InGaSb, AlInN, AlInP, AlInAs, and AlInSb, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInNAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, or a combination thereof.

5. The nanocrystal of claim 3 , wherein the Group II metal is selected from Zn, Cd, Hg, Mg, or a combination thereof.

6. The nanocrystal of claim 1 , wherein the Group III element comprises In, and wherein the Group V element comprises P.

7. The nanocrystal of claim 1 , wherein the outermost monolayer comprises ZnS.

8. The nanocrystal of claim 1 , wherein the core comprises InZnP.

9. The nanocrystal of claim 1 , wherein a photoluminescence of the nanocrystal has a full width at half maximum of less than or equal to about 45 nanometers.

10. The nanocrystal of claim 1 , wherein the nanocrystal has a luminous efficiency QY of greater than or equal to about 70 percent.

11. The nanocrystal of claim 1 , wherein the nanocrystal has a diameter of greater than or equal to about 6 nanometers.

12. The nanocrystal of claim 1 , wherein the nanocrystal has a light emitting region in a photoluminescence spectrum of about 500 nanometers to about 750 nanometers.

13. The nanocrystal of claim 1 , wherein the nanocrystal has a photoluminescence emission peak at a wavelength ranging from 535 nanometers to 545 nanometers.

14. A method of preparing a nanocrystal comprising a core comprising a Group III element, and a Group V element, and a shell comprising ZnSeS multi-layers comprising Zn, Se, and S, and formed on a surface of the core, the method comprising:
providing a nanocrystal core comprising a Group III element, and a Group V element, and
contacting the nanocrystal core with a precursor of Zn, Se, and S to form the ZnSeS multi-layers of the shell overcoating the core and prepare the nanocrystal,
wherein each of the ZnSeS multi-layers of the shell comprising a compound of the formula ZnSe y S (1-y) , wherein 0≤y≤1, and
wherein forming the ZnSeS multi-layers comprises introducing Zn, Se and S precursors in a mole ratio such that the ZnSeS multi-layers have a Se:S concentration ratio gradient, wherein the Se:S concentration ratio gradient comprises an increasing concentration of Se and a decreasing concentration of S in a direction from the core to a predetermined monolayer; and a decreasing concentration of Se and an increasing concentration of S in a direction from the predetermined monolayer to an outermost monolayer, wherein the predetermined monolayer is located between a first monolayer directly disposed on a surface of the core and the outermost monolayer.

15. The method of claim 14 , wherein the Zn, Se, and S precursors are present in a mole ratio of about 1:2 to about 60:1 to form the first monolayer directly disposed on the surface of the core to have a Se:S mole ratio of from about 5:1 to about 20:1.

16. The method of claim 14 , wherein the core further comprises a Group II metal.

17. The method of claim 16 , wherein the Group II metal is selected from Zn, Cd, Hg, Mg, or a combination thereof.

18. The method of claim 14 , wherein the outermost monolayer comprises ZnS.

19. A light emitting device comprising the nanocrystal according to claim 1 .

20. The light emitting device of claim 19 , wherein the light emitting device is a display, a sensor, a photodetector, a solar cell, a hybrid composite, or a bio-labeling device.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Jun Shin Ae
• Jang Eun Joo
• Kwon Soo Kyung
• Kim Taek Hoon
• Lee Won Joo

Classifications

• H10P14/20 Primary

  of semiconductor materials · CPC title

• H10F77/1433

  Quantum dots · CPC title

• H10F77/124

  comprising only Group III-V materials, e.g. GaAs · CPC title

• H10F77/123 Primary

  comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe · CPC title

• Y10S977/89

  Deposition of materials, e.g. coating, cvd, or ald · CPC title