Photodiode with improved power absorption

Patent metadata

Field	Value
Publication number	US-10950739-B2
Application number	US-201815952683-A
Country	US
Kind code	B2
Filing date	Apr 13, 2018
Priority date	Apr 13, 2017
Publication date	Mar 16, 2021
Grant date	Mar 16, 2021

Abstract

A photodiode which includes a core of a first waveguide that terminates in a tapered termination that extends above a core, made of germanium or of SiGe, of a second waveguide, a matching strip that extends opposite the tapered termination on one side and opposite the core of the second waveguide on the opposite side, this matching strip being coupled optically to the core of the second waveguide by an evanescent coupling and including a first zone inside which its effective propagation index is equal to the effective propagation index of a second zone of the tapered termination, these first and second zones optically coupling the tapered termination to the matching strip through a modal coupling, and a low-index layer that extends between the matching strip and the tapered termination.

First claim

The invention claimed is:

1. A photodiode for detecting an optical signal, comprising:
a substrate that extends mainly in a plane,
first and second contact terminals,
first and second waveguides that have, over their entire length, different effective propagation indices, each of these waveguides including a core surrounded by a cladding, the optical signal propagating essentially inside the core, the cores of the first and second waveguides each extending mainly parallel to the plane of the substrate and being coupled optically to one another, the core of the second waveguide being made from germanium or from SiGe so as to transform the optical signal into electrical charges,
first and second oppositely doped regions that electrically connect the core of the second waveguide, respectively, to the first and second contact terminals, such that the magnitude of the current between the first and second contact terminals varies depending on the power of the optical signal absorbed by the core of the second waveguide,
wherein:
the core of the first waveguide terminates in a tapered termination that extends parallel to the plane of the substrate,
the cores of the first and second waveguides are separated by a low-index layer to form a stacked structure, with the core of the first waveguide being above or below the core of the second waveguide,
the photodiode includes a matching strip that extends opposite the tapered termination on one side and opposite the core of the second waveguide on the opposite side, the matching strip being coupled optically to the core of the second waveguide by an evanescent coupling and including a first zone inside which its effective propagation index is equal to the effective propagation index of a second zone of the tapered termination situated opposite the first zone, these first and second zones thus optically coupling the tapered termination to the matching strip through a modal coupling, and
the low-index layer extends parallel to the plane of the substrate between the matching strip and the tapered termination, the low-index layer being made from a material whose refractive index is less than 0.8n min , where n min is the value of the smallest refractive index chosen from the group consisting of the refractive indices of the materials used to form the cores of the first and second waveguides, respectively, the refractive indices being measured, in the same conditions, at the wavelength λ of the optical signal.

2. The photodiode according to claim 1 , wherein the matching strip is mechanically directly in contact with the core of the second waveguide.

3. The photodiode according to claim 1 , wherein the length of the core of the second waveguide in the direction of propagation of the optical signal is less than 50 μm.

4. The photodiode according to claim 1 , wherein the width of the entire cross section of the matching strip opposite the core of the second waveguide, in a direction parallel to the plane of the substrate and perpendicular to the direction of propagation of the optical signal, is less than or equal to the width of the core of the second waveguide in the same direction.

5. The photodiode according to claim 4 , wherein the width of the entire cross section of the matching strip opposite the core of the second waveguide is equal to the width of the core of the second waveguide.

6. The photodiode according to claim 1 , wherein the first zone of the matching strip is situated opposite a third zone of the core of the second waveguide, this third zone being situated in the direction of propagation of the optical signal, inside the first quarter of the core of the second waveguide.

7. The photodiode according to claim 1 , wherein the tapered termination includes lateral flanks that gradually and continuously approach one another, going in the direction of propagation of the optical signal, from the second zone as far as a distal end beyond which the core of the first waveguide no longer exists.

8. The photodiode according to claim 1 , wherein the core of the first waveguide and the matching strip are made from silicon.

9. The photodiode according to claim 1 , wherein the thickness of the low-index layer is greater than or equal to 20 nm and less than λ, where λ is the wavelength of the optical signal propagating inside the first waveguide.

10. The photodiode according to claim 1 , wherein, regardless of the selected zones opposite the first and second waveguides, the difference between the effective propagation indices of the first and second waveguides inside these two opposite zones is greater than 0.05n eff1 , where n eff1 is the effective propagation index inside the zone of the first waveguide.

Assignees

• Commissariat Energie Atomique

Inventors

• Hassan Karim
• Boutami Salim
• Kopp Christophe

Classifications

• H10F77/206

  for devices having potential barriers · CPC title

• H10F71/1215

  comprising at least two Group IV elements, e.g. SiGe · CPC title

• H10F71/1212

  consisting of germanium · CPC title

• H10F30/223

  the potential barrier being a PIN barrier · CPC title

• H10F77/413 Primary

  directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42) · CPC title