Method for manufacturing a semiconductor device and semiconductor device

Patent metadata

Field	Value
Publication number	US-10950455-B2
Application number	US-201916572950-A
Country	US
Kind code	B2
Filing date	Sep 17, 2019
Priority date	Sep 18, 2018
Publication date	Mar 16, 2021
Grant date	Mar 16, 2021

Abstract

A method for manufacturing a semiconductor device in which a semiconductor substrate is provided, including a SOI-wafer having a carrier layer defining a rear side, a functional layer defining a front side. An insulation layer is situated between the carrier layer and functional layer. The functional layer includes a functional area having functional structures. The front side is masked, a first mask opening defines an interior area containing the functional area. The functional layer is removed by etching the front side. The rear side is masked, a second mask opening being configured, and a circumferential edge of the second mask opening is spaced outwardly relative to an outer circumferential edge of the interior area. The carrier layer and the insulation layer are removed at least in the area of the second-mask opening by etching to expose the interior area.

First claim

What is claimed is:

1. A method for manufacturing a semiconductor device, the method comprising:
providing a semiconductor substrate, including a silicon-on-insulator (SOI) wafer having a carrier layer defining a rear side, a functional layer defining a front side and an insulation layer situated between the carrier layer and the functional layer, the functional layer including a functional area having electronic functional structures;
masking the front side of the semiconductor substrate, a first mask opening being configured, which delimits an interior area containing the functional area;
removing a portion of the functional layer which circumferentially surrounds the interior area containing the functional area including the electronic functional structures by etching the front side of the masked semiconductor substrate, the etching of the front side exposing the insulation layer while leaving the interior area containing the functional area including the electronic functional structures intact;
masking the rear side of the semiconductor substrate, a second mask opening being configured, a circumferential edge of the second mask opening being spaced outwardly relative to an outer circumferential edge of the interior area; and
removing the carrier layer and the insulation layer at least in the area of the second mask opening by etching the rear side of the semiconductor substrate to expose the interior area.

2. The method of claim 1 , wherein the functional layer has a layer thickness in a range between 5 μm and 50 μm.

3. The method of claim 1 , wherein the first mask opening is configured with at least one web, which connects the interior area and a surrounding exterior area.

4. The method of claim 3 , wherein, once the rear side is etched, the interior area is separated from the exterior area by severing the at least one web.

5. The method of claim 1 , wherein the masking of the front side includes an application of a first photoresist layer, and the first mask opening is formed in the photoresist layer with a photolithographic process.

6. The method of claim 1 , wherein the masking of the rear side includes an application of a second photoresist layer to the carrier layer and the second mask opening is formed in the second photoresist layer with a photolithographic process to expose the carrier layer.

7. The method of claim 1 , wherein the etching of the rear side of the semiconductor substrate includes an at least partial removal of the carrier layer within the circumferential edge of the second mask opening.

8. The method of claim 1 , wherein the insulation layer is removed with a dry etching process or with a wet etching process.

9. The method of claim 1 , wherein the portion of the functional layer and/or the carrier layer is removed with an ion beam etching process.

10. The method of claim 1 , wherein the functional layer and/or the carrier layer is removed with a deep reactive ion etching (DRIE) process or a reactive ion beam etching (RIE) process.

11. The method as recited in claim 1 , wherein the electronic structures include a complementary metal oxide semiconductor (CMOS) element and/or a doped area.

Assignees

• Bosch Gmbh Robert

Inventors

• Wu Zhenyu
• Schindele Jens
• Kramer Torsten

Classifications

• H10P95/066

  the removal being a selective chemical etching step, e.g. selective dry etching through a mask · CPC title

• H10P76/2041

  Photolithographic processes · CPC title

• H10P50/20

  Dry etching; Plasma etching; Reactive-ion etching · CPC title

• H10P50/692 Primary

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• H10P54/00 Primary

  Cutting or separating of wafers, substrates or parts of devices · CPC title