Cmos image sensor and fabrication method thereof
US-2017170224-A1 · Jun 15, 2017 · US
US10950178B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10950178-B2 |
| Application number | US-201916279809-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 19, 2019 |
| Priority date | Feb 20, 2018 |
| Publication date | Mar 16, 2021 |
| Grant date | Mar 16, 2021 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A vertically stacked pixel circuit is provided that includes a high voltage device for driving a pixel on an upper silicon layer, and low voltage circuitry (such as matrix addressing circuitry, data storage circuitry and uniformity compensation circuitry) on a lower silicon layer. The circuitry on the upper and lower silicon layers are electrically connected via a through-silicon via. This unique arrangement allows the high voltage device for driving a pixel to be physically located on top of the larger number of low voltage devices in the lower silicon layer in order to achieve a substantial reduction in overall pixel emission area. The vertically stacked pixel circuit is particularly suited for organic light-emitting diode microdisplays.
Opening claim text (preview).
What is claimed is: 1. A vertically stacked pixel circuit, comprising: a lower portion comprising (1) low voltage circuitry that includes at least one low voltage transistor and (2) data storage circuitry that includes at least one trench capacitor; and an upper portion, disposed above the lower portion, comprising at least one high voltage transistor and pixel drive circuitry configured to drive a first organic light-emitting diode (OLED), wherein the upper portion includes a first through-silicon via (TSV) and at least one high voltage transistor; wherein the upper and lower portions are electrically connected via a single electrical connection point that includes the first TSV. 2. The circuit of claim 1 , wherein the high voltage transistor has an operating voltage that is greater than 3 volts, and wherein the at least one low voltage transistor has an operating voltage of 3 volts or lower. 3. The circuit of claim 1 , wherein the lower portion further includes (3) matrix-addressing circuitry and (4) uniformity-compensation circuitry. 4. The circuit of claim 1 wherein the upper portion is formed on a first silicon layer and the lower portion is formed on a second silicon layer, and wherein the first silicon layer and second silicon layer are bonded together. 5. The circuit of claim 1 , wherein the upper portion further comprises the first OLED. 6. The circuit of claim 1 , wherein a length and width of the circuit are less than 4 μm×4 μm. 7. A vertically stacked pixel circuit, comprising: a lower portion comprising (1) low voltage circuitry that includes at least one low voltage transistor having an operating voltage of 3 volts or lower and (2) data storage circuitry that includes at least one trench capacitor; and an upper portion, disposed above the lower portion, comprising a first organic light-emitting diode (OLED) and pixel drive circuitry configured to drive the first OLED, wherein the upper portion includes a first through-silicon via (TSV) and high voltage circuitry that includes at least one high voltage transistor having an operating voltage greater than 3 volts; wherein the upper and lower portions are electrically connected via a single electrical connection point that includes the first TSV. 8. The pixel circuit of claim 7 , wherein the lower portion further comprises matrix addressing circuitry and uniformity compensation circuitry. 9. The pixel circuit of claim 8 , wherein the matrix addressing circuitry comprises a selection switch and the trench capacitor is a storage capacitor. 10. The pixel circuit of claim 7 , wherein the lower portion and the upper portion are formed on respective silicon layers. 11. The pixel circuit of claim 10 , wherein the silicon layer containing the lower portion and the silicon layer containing the upper portion are bonded together. 12. The pixel circuit of claim 10 , wherein a length and width of the pixel circuit are less than 4 μm×4 μm. 13. A microdisplay comprising a plurality of sub-pixels, wherein each sub-pixel comprises the pixel drive circuit of claim 7 .
Active-matrix OLED [AMOLED] displays · CPC title
with pixel circuitry controlling the voltage across the light-emitting element · CPC title
using silicon technology, e.g. SiGe · CPC title
organic, e.g. using organic light-emitting diodes [OLED] · CPC title
Three-dimensional [3D] integrated devices · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.