Microdisplay with reduced pixel size and method of forming same

US10950178B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10950178-B2
Application numberUS-201916279809-A
CountryUS
Kind codeB2
Filing dateFeb 19, 2019
Priority dateFeb 20, 2018
Publication dateMar 16, 2021
Grant dateMar 16, 2021

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  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A vertically stacked pixel circuit is provided that includes a high voltage device for driving a pixel on an upper silicon layer, and low voltage circuitry (such as matrix addressing circuitry, data storage circuitry and uniformity compensation circuitry) on a lower silicon layer. The circuitry on the upper and lower silicon layers are electrically connected via a through-silicon via. This unique arrangement allows the high voltage device for driving a pixel to be physically located on top of the larger number of low voltage devices in the lower silicon layer in order to achieve a substantial reduction in overall pixel emission area. The vertically stacked pixel circuit is particularly suited for organic light-emitting diode microdisplays.

First claim

Opening claim text (preview).

What is claimed is: 1. A vertically stacked pixel circuit, comprising: a lower portion comprising (1) low voltage circuitry that includes at least one low voltage transistor and (2) data storage circuitry that includes at least one trench capacitor; and an upper portion, disposed above the lower portion, comprising at least one high voltage transistor and pixel drive circuitry configured to drive a first organic light-emitting diode (OLED), wherein the upper portion includes a first through-silicon via (TSV) and at least one high voltage transistor; wherein the upper and lower portions are electrically connected via a single electrical connection point that includes the first TSV. 2. The circuit of claim 1 , wherein the high voltage transistor has an operating voltage that is greater than 3 volts, and wherein the at least one low voltage transistor has an operating voltage of 3 volts or lower. 3. The circuit of claim 1 , wherein the lower portion further includes (3) matrix-addressing circuitry and (4) uniformity-compensation circuitry. 4. The circuit of claim 1 wherein the upper portion is formed on a first silicon layer and the lower portion is formed on a second silicon layer, and wherein the first silicon layer and second silicon layer are bonded together. 5. The circuit of claim 1 , wherein the upper portion further comprises the first OLED. 6. The circuit of claim 1 , wherein a length and width of the circuit are less than 4 μm×4 μm. 7. A vertically stacked pixel circuit, comprising: a lower portion comprising (1) low voltage circuitry that includes at least one low voltage transistor having an operating voltage of 3 volts or lower and (2) data storage circuitry that includes at least one trench capacitor; and an upper portion, disposed above the lower portion, comprising a first organic light-emitting diode (OLED) and pixel drive circuitry configured to drive the first OLED, wherein the upper portion includes a first through-silicon via (TSV) and high voltage circuitry that includes at least one high voltage transistor having an operating voltage greater than 3 volts; wherein the upper and lower portions are electrically connected via a single electrical connection point that includes the first TSV. 8. The pixel circuit of claim 7 , wherein the lower portion further comprises matrix addressing circuitry and uniformity compensation circuitry. 9. The pixel circuit of claim 8 , wherein the matrix addressing circuitry comprises a selection switch and the trench capacitor is a storage capacitor. 10. The pixel circuit of claim 7 , wherein the lower portion and the upper portion are formed on respective silicon layers. 11. The pixel circuit of claim 10 , wherein the silicon layer containing the lower portion and the silicon layer containing the upper portion are bonded together. 12. The pixel circuit of claim 10 , wherein a length and width of the pixel circuit are less than 4 μm×4 μm. 13. A microdisplay comprising a plurality of sub-pixels, wherein each sub-pixel comprises the pixel drive circuit of claim 7 .

Assignees

Inventors

Classifications

  • Active-matrix OLED [AMOLED] displays · CPC title

  • G09G3/3258Primary

    with pixel circuitry controlling the voltage across the light-emitting element · CPC title

  • using silicon technology, e.g. SiGe · CPC title

  • organic, e.g. using organic light-emitting diodes [OLED] · CPC title

  • H10D88/00Primary

    Three-dimensional [3D] integrated devices · CPC title

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What does patent US10950178B2 cover?
A vertically stacked pixel circuit is provided that includes a high voltage device for driving a pixel on an upper silicon layer, and low voltage circuitry (such as matrix addressing circuitry, data storage circuitry and uniformity compensation circuitry) on a lower silicon layer. The circuitry on the upper and lower silicon layers are electrically connected via a through-silicon via. This uniq…
Who is the assignee on this patent?
Emagin Corp
What technology area does this patent fall under?
Primary CPC classification G09G3/3258. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Mar 16 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 6 related publications on this page (citations in our corpus or others sharing the same primary CPC).