Scintillation crystal, a radiation detection system including the scintillation crystal, and a method of using the radiation detection system

US10947452B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10947452-B2
Application numberUS-201916560468-A
CountryUS
Kind codeB2
Filing dateSep 4, 2019
Priority dateJun 6, 2011
Publication dateMar 16, 2021
Grant dateMar 16, 2021

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Abstract

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A scintillation crystal can include Ln (1-y) RE y X 3 , wherein Ln represents a rare earth element, RE represents a different rare earth element, y has a value in a range of 0 to 1, and X represents a halogen. In an embodiment, RE is Ce, and the scintillation crystal is doped with Sr, Ba, or a mixture thereof at a concentration of at least approximately 0.0002 wt. %. In another embodiment, the scintillation crystal can have unexpectedly improved linearity and unexpectedly improved energy resolution properties. In a further embodiment, a radiation detection system can include the scintillation crystal, a photosensor, and an electronics device. Such a radiation detection system can be useful in a variety of radiation imaging applications.

First claim

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What is claimed is: 1. A method comprising: placing precursors into a crucible; melting the precursors to form a melt; and forming a scintillation crystal from the melt, wherein the scintillation crystal comprises La (1-y) RE y X 3 :Me 2+ , wherein: RE represents a different rare earth element than La; y has a value in a range of 0 to 0.5; X represents a halogen; and Me 2+ represents Sr, Ba, or any mixture thereof and has a concentration in a range of 0.0002 wt. % to 0.05 wt. %. 2. The method of claim 1 , wherein the scintillation crystal has a property including: for a radiation energy range of 60 keV to 356 keV, the scintillation crystal has an average value for a departure from perfect linearity of no less than −0.35%; for a radiation energy range of 2000 keV to 2600 keV, the scintillation crystal has an average value for a departure from perfect linearity of no greater than 0.07%; for a radiation energy range of 60 keV to 356 keV, the scintillation crystal has an absolute value for a furthest departure from perfect linearity of no greater than 0.7%; or any combination thereof. 3. The method of claim 2 , wherein the average value for the departure from perfect linearity (DFPL average ) is determined by: DFPL average = ∫ E lower E upper ⁢ DFPL ⁡ ( E i ) · dE i E upper - E lower , where DFPL(Ei) is DFPL at energy E i ; E upper is the upper limit of the energy range; and E lower is the lower limit of the energy range. 4. The method of claim 1 , wherein the concentration of Me 2+ is no greater than 0.03 wt. %. 5. The method of claim 4 , wherein y has a value in a range of 0.0001 to 0.2. 6. The method of claim 1 , wherein RE is Ce. 7. The method of claim 6 , wherein y has a value in a range of 0.0001 to 0.2. 8. The method of claim 1 , wherein Me 2+ represents Sr. 9. The method of claim 1 , wherein Me 2+ represents Ba. 10. The method of claim 1 , wherein Me 2+ does not include any divalent metal element other than Sr, Ba, or any combination thereof. 11. The method of claim 1 , wherein the concentration of Me 2+ is in a range of 0.005 wt. % to 0.02 wt. %. 12. The method of claim 1 , further comprising placing the scintillation crystal within casing. 13. The method of claim 2 , further comprising placing an optical interface adjacent to a surface of the scintillation crystal. 14. The method of claim 1 , wherein the precursors comprise a rare earth halide precursor. 15. The method of claim 1 , wherein the precursors comprise a strontium halide, a barium halide, or any combination thereof. 16. The method of claim 1 , further comprising roughening a surface of the scintillation crystal. 17. A method, comprising: placing into a crucible precursors including: a rare earth halide precursor; and a dopant precursor that includes a strontium halide, a barium halide, or any combination thereof; melting the precursors to form a melt; and forming a scintillation crystal from the melt, wherein the scintillation crystal comprises La (1-y) RE y X 3 :Me 2+ , wherein: RE represents a rare earth element other than La; y has a value in a range of 0 to 0.5; X represents a halogen; and Me 2+ represents Sr, Ba, or any mixture thereof and has a concentration in a range of 0.0002 wt. % to 0.05 wt. %. 18. The method of claim 17 , wherein the scintillation crystal has a property including: for a radiation energy range of 60 keV to 356 keV, the scintillation crystal has an average value for a departure from perfect linearity of no less than −0.35%; for a radiation energy range of 2000 keV to 2600 keV, the scintillation crystal has an average value for a departure from perfect linearity of no greater than 0.07%; for a radiation energy range of 60 keV to 356 keV, the scintillation crystal has an absolute value for a furthest departure from perfect linearity of no greater than 0.7%; or any combination thereof. 19. A method, comprising: placing precursors into a crucible; melting the precursors to form a melt; contacting the melt with a seed crystal; and using the seed crystal to form a scintillation crystal from the melt, wherein the scintillation crystal comprises La (1-y) RE y X 3 :Me 2+ , wherein: RE represents a rare earth element other than La; y has a value in a range of 0 to 0.5; X represents a halogen; and Me 2+ represents Sr, Ba, or any mixture thereof and has a concentration in a range of 0.0002 wt. % to 0.05 wt. %. 20. The method of claim 19 , wherein the scintillation crystal has a property including: for a radiation energy range of 60 keV to 356 keV, the scintillation crystal has an average value for a departure from perfect linearity of no less than −0.35%; for a radiation energy range of 2000 keV to 2600 keV, the scintillation crystal has an average value for a departure from perfect linearity of no greater than 0.07%; for a radiation energy range of 60 keV to 356 keV, the scintillation crystal has an absolute value for a furthest departure from perfect linearity of no greater than 0.7%; or any combination thereof.

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What does patent US10947452B2 cover?
A scintillation crystal can include Ln (1-y) RE y X 3 , wherein Ln represents a rare earth element, RE represents a different rare earth element, y has a value in a range of 0 to 1, and X represents a halogen. In an embodiment, RE is Ce, and the scintillation crystal is doped with Sr, Ba, or a mixture thereof at a concentration of at least approximately 0.0002 wt. %. In another embodiment, the …
Who is the assignee on this patent?
Saint Gobain Ceramics
What technology area does this patent fall under?
Primary CPC classification C09K11/7772. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Mar 16 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).