Crack-resistant silicon-based planarizing compositions, methods and films

Patent metadata

Field	Value
Publication number	US-10947412-B2
Application number	US-201816210153-A
Country	US
Kind code	B2
Filing date	Dec 5, 2018
Priority date	Dec 19, 2017
Publication date	Mar 16, 2021
Grant date	Mar 16, 2021

Abstract

A composition for planarizing a semiconductor device surface includes a silicon-based material and a cross-linker including a siloxane compound according to the general formula:

wherein R is an aliphatic comprising group and R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 are each independently selected from the group consisting of: H or an alkyl group with substituted or unsubstituted carbons.

First claim

What is claimed is:

1. A composition for planarizing a surface of a semiconductor device, the composition comprising:
a silicon-based material including a polysiloxane resin, the polysiloxane resin formed from monomers consisting of methyltriethoxysilane, dimethyldiethoxysilane, and phenyl triethoxysilane;
at least one solvent;
a catalyst; and
a cross-linker including a siloxane compound according to the general formula:

wherein R is an aliphatic comprising group and R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 are each independently selected from the group consisting of: H or an alkyl group with substituted or unsubstituted carbons.

2. The composition of claim 1 , wherein the cross-linker includes at least one of: bis-(trimethoxysilylpropyl) amine, bis(triethoxysilyl) methane, 1,2-bis(triethoxysilyl) ethane and 1-(triethoxysilyl)-2-(diethoxymethylsilyl) ethane.

3. The composition of claim 2 , wherein the cross-linker consists of bis-(trimethoxysilylpropyl) amine.

4. The composition of claim 1 , wherein a concentration of the cross-linker is from 0.01 weight percent to 5 weight percent of the composition.

5. The composition of claim 1 , wherein the at least one solvent includes at least one of: ethyl lactate, propylene glycol propyl ether, propylene glycol monomethyl ether acetate, ethanol, isopropyl alcohol, and n-butyl acetate.

6. The composition of claim 1 , wherein the catalyst includes at least one of: tetramethylammonium acetate, tetramethylammonium hydroxide, tetrabutylammonium acetate, cetyltrimethylammonium acetate, and tetramethylammonium nitrate.

7. The composition of claim 1 , further including a surfactant.

8. A method for making a planarizing composition, the method comprising:
dissolving a silicon-based material in one or more solvents to form a silicon-based material solution, the silicon-based material including a polysiloxane resin, the polysiloxane resin formed from monomers consisting of methyltriethoxysilane, dimethyldiethoxysilane, and phenyl triethoxysilane;
adding a catalyst to the silicon-based material solution; and
adding a cross-linker to the silicon-based material solution, the cross-linker includes a siloxane compound according to the general formula:

wherein R is an aliphatic comprising group and R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 are each independently selected from the group consisting of: H or an alkyl group with substituted or unsubstituted carbons.

9. The method of claim 8 , wherein the cross-linker includes at least one of: bis-(trimethoxysilylpropyl) amine, bis(triethoxysilyl) methane, 1,2-bis(triethoxysilyl) ethane, and 1-(triethoxysilyl)-2-(diethoxymethylsilyl) ethane.

10. The method of claim 9 , wherein the cross-linker consists of bis-(trimethoxysilylpropyl) amine.

11. The method of claim 8 , wherein the catalyst includes at least one of: tetramethylammonium acetate, tetramethylammonium hydroxide, tetrabutylammonium acetate, cetyltrimethylammonium acetate, and tetramethylammonium nitrate.

12. The method of claim 8 , wherein a concentration of the cross-linker is from 0.01 weight percent to 5 weight percent of the composition.

13. A planarizing film for a semiconductor device, the film comprising:
a cured silicon-based polymer including a polysiloxane resin, the polysiloxane resin formed from monomers consisting of methyltriethoxysilane, dimethyldiethoxysilane, and phenyl triethoxysilane;
a residue of a catalyst; and
a residue of a cross-linker, the residue of the cross-linker including a residue of a siloxane compound according to the general formula:

wherein R is an aliphatic comprising group and R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 are each independently selected from the group consisting of: H or an alkyl group with substituted or unsubstituted carbons.

14. The planarizing film of claim 13 , wherein the residue of the cross-linker includes a residue of at least one of: bis-(trimethoxysilylpropyl) amine, bis(triethoxysilyl) methane, 1,2-bis(triethoxysilyl) ethane, and 1-(triethoxysilyl)-2-(diethoxymethylsilyl) ethane.

15. The planarizing film of claim 13 , wherein the residue of the catalyst includes at least one of: tetramethylammonium acetate, tetramethylammonium hydroxide, tetrabutylammonium acetate, cetyltrimethylammonium acetate, and tetramethylammonium nitrate.

16. The planarizing film of claim 13 , wherein the planarizing film has a film thickness over a portion of the semiconductor device that is greater than 3 microns.

Assignees

• Honeywell Int Inc

Inventors

• Huang Hong Min
• Xu Helen Xiao

Classifications

• H10P95/06

  Planarisation of inorganic insulating materials · CPC title

• H10P14/6342

  Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title

• H10P14/6686

  the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane · CPC title

• H10P14/6922

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• C09G1/16 Primary

  on natural or synthetic resins · CPC title