Distributed reflector laser

US10944241B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10944241-B2
Application numberUS-201916596699-A
CountryUS
Kind codeB2
Filing dateOct 8, 2019
Priority dateMar 6, 2016
Publication dateMar 9, 2021
Grant dateMar 9, 2021

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A distributed reflector (DR) laser may include a distributed feedback (DFB) region and a distributed Bragg reflector (DBR). The DFB region may have a length in a range from 30 micrometers (μm) to 100 μm and may include a DFB grating with a first kappa in a range from 100 cm−1 to 150 cm−1. The DBR region may be coupled end to end with the DFB region and may have a length in a range from 30-300 μm. The DBR region may include a DBR grating with a second kappa in a range from 150 cm−1 to 200 cm−1. The DR laser may additionally include a lasing mode and a p-p resonance frequency. The lasing mode may be at a long wavelength side of a peak of a DBR reflection profile of the DBR region. The p-p resonance frequency may be less than or equal to 70 GHz.

First claim

Opening claim text (preview).

What is claimed is: 1. A distributed reflector (DR) laser, comprising: a distributed feedback (DFB) region comprising a DFB grating; a distributed Bragg reflector (DBR) region coupled end to end with the DFB region, and comprising a DBR grating; a lasing mode aligned to a long wavelength edge of a peak of a DBR reflection profile of the DBR region, wherein the lasing mode changes frequency along the edge of the peak of the DBR reflection profile in response to modulation of the DFB region such that loss of a laser cavity of the DR laser is dynamically modulated responsive to modulation of the DFB region; a photon-photon resonance (PPR) frequency; an intrinsic resonant frequency (F r ), wherein the PPR frequency is greater than or equal to double the intrinsic resonant frequency (F r ); and an external cavity mode within 1 nanometer of the lasing mode. 2. The DR laser of claim 1 , wherein a length of the DFB region is in a range from 30-100 micrometers. 3. The DR laser of claim 2 , wherein the length of the DFB region is 50 micrometers. 4. The DR laser of claim 1 , wherein a length of the DBR region is in a range from 30-100 micrometers. 5. The DR laser of claim 1 , further comprising a photon-photon resonance (PPR) frequency aligned near a null of the DBR reflection profile on the long wavelength side of the peak of the DBR reflection profile. 6. The DR laser of claim 1 , wherein the DFB region further comprises a multiple quantum well (MQW) structure having a large linewidth enhancement factor ax. 7. The DR laser of claim 6 , wherein the linewidth enhancement factor ax of the MQW structure is greater than or equal to 4. 8. The DR laser of claim 1 , wherein the DR laser has a 3-decibel (dB) modulation bandwidth (BW) of at least 50 gigahertz (GHz). 9. The DR laser of claim 1 further comprising a passive waveguide positioned between the DFB region and a front of the DR laser. 10. A distributed reflector (DR) laser, comprising: a distributed feedback (DFB) region comprising a DFB grating; a distributed Bragg reflector (DBR) region coupled end to end with the DFB region and comprising a DBR grating; a lasing mode aligned to a long wavelength edge of a peak of a DBR reflection profile of the DBR region; a photon-photon resonance (PPR) frequency; and an intrinsic resonant frequency (F r ), wherein the PPR frequency is greater than or equal to double the intrinsic resonant frequency (F r ). 11. The DR laser of claim 10 , wherein modulation of the DFB section modulates cavity loss of the DR laser and increases intrinsic speed of the DR laser. 12. The DR laser of claim 10 , wherein a length of the DFB region is in a range from 30-100 micrometers (μm) and a length of the DBR region is in a range from 30-200 μm. 13. The DR laser of claim 10 , wherein the DFB region has a first stop-band that is wider than a second stop-band of the DBR region. 14. The DR laser of claim 13 , wherein the first stop-band of the DFB region is 8 nanometers (nm) in width and the second stop-band of the DBR region is 5 nm in width. 15. The DR laser of claim 10 , wherein the DFB region further comprises a multiple quantum well (MQW) structure having a large linewidth enhancement factor α H . 16. The DR laser of claim 15 , wherein the linewidth enhancement factor α H of the MQW structure is greater than or equal to 4. 17. The DR laser of claim 10 , wherein the DR laser has a 3-decibel (dB) modulation bandwidth (BW) of at least 50 gigahertz (GHz). 18. The DR laser of claim 10 , further comprising an external cavity mode within 1 nanometer of the lasing mode. 19. The DR laser of claim 10 , wherein the PPR frequency is aligned within 1 nanometer of a null of the DBR reflection profile on the long wavelength side of the peak of the DBR reflection profile. 20. A distributed reflector (DR) laser, comprising: a distributed feedback (DFB) region comprising a DFB grating; a distributed Bragg reflector (DBR) region coupled end to end with the DFB region at a rear of the DR laser, and comprising a DBR grating; a passive waveguide positioned between the DFB region and a front of the DR laser, the passive waveguide forming an external cavity with the DFB region with an external cavity mode separated from a lasing mode of the DFB region by a photon-photon resonance (PPR) frequency; the lasing mode of the DFB region aligned to a long wavelength edge of a peak of a reflection profile of the DR laser, wherein modulation of the DFB section modulates cavity loss of the DR laser and increases intrinsic speed of the DR laser; and the external cavity mode within 1 nanometer of the lasing mode.

Assignees

Inventors

Classifications

  • comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers (H01S5/36 takes precedence) · CPC title

  • with DBR-structure · CPC title

  • Detuning between Bragg wavelength and gain maximum · CPC title

  • using a wavelength selective device, e.g. a grating or etalon (H01S5/146 takes precedence) · CPC title

  • with a varying coupling constant along the optical axis · CPC title

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What does patent US10944241B2 cover?
A distributed reflector (DR) laser may include a distributed feedback (DFB) region and a distributed Bragg reflector (DBR). The DFB region may have a length in a range from 30 micrometers (μm) to 100 μm and may include a DFB grating with a first kappa in a range from 100 cm−1 to 150 cm−1. The DBR region may be coupled end to end with the DFB region and may have a length in a range from 30-300 μ…
Who is the assignee on this patent?
Finisar Corp, Ii Vi Delaware Inc
What technology area does this patent fall under?
Primary CPC classification H01S5/06256. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Mar 09 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).