Magnetoresistance effect element

Patent metadata

Field	Value
Publication number	US-10937951-B2
Application number	US-201815911689-A
Country	US
Kind code	B2
Filing date	Mar 5, 2018
Priority date	Mar 3, 2017
Publication date	Mar 2, 2021
Grant date	Mar 2, 2021

Abstract

A magnetoresistance effect element according to an aspect of the present disclosure includes a first ferromagnetic layer as a magnetization fixed layer including a ferromagnetic Heusler alloy, a second ferromagnetic layer as a magnetization free layer including a ferromagnetic Heusler alloy, and a nonmagnetic spacer layer provided between the first ferromagnetic layer and the second ferromagnetic layer, and the nonmagnetic spacer layer includes a nonmagnetic Fe group, Co group, or Ni group Heusler alloy.

First claim

What is claimed is:

1. A magnetoresistance effect element comprising:
a first ferromagnetic layer as a magnetization fixed layer including a ferromagnetic Heusler alloy;
a second ferromagnetic layer as a magnetization free layer including a ferromagnetic Heusler alloy; and
a nonmagnetic spacer layer provided between the first ferromagnetic layer and the second ferromagnetic layer,
wherein the nonmagnetic spacer layer includes a nonmagnetic (i) Fe group Heusler alloy selected from the group consisting of Fe 2 TiSi, Fe 2 ZrGe, Fe 2 HfSn, Fe 2 TaAl, Fe 2 NbGa, Fe 2 CrZn, Fe 2 MoCd, Fe 2 WSr, and Fe 2 ScBi, or (ii) Co group Heusler alloy selected from the group consisting of Co 2 ZnGe, Co 2 ScAl, and Co 2 ScGa.

2. The magnetoresistance effect element according to claim 1 , wherein the nonmagnetic Heusler alloy has a B2 structure or a L2 1 structure.

3. The magnetoresistance effect element according to claim 2 , wherein at least one of the ferromagnetic Heusler alloy included in the first ferromagnetic layer and the second ferromagnetic layer includes a Heusler alloy expressed by a composition formula of Co 2 QR, Q is one or more elements selected from the group consisting of Cr, Mn, and Fe, and R is one or more elements selected from the group consisting of Al, Si, Ga, Ge, In, and Sn.

4. The magnetoresistance effect element according to claim 1 , wherein at least one of the ferromagnetic Heusler alloy included in the first ferromagnetic layer and the second ferromagnetic layer includes a Heusler alloy expressed by a composition formula of Co 2 QR, Q is one or more elements selected from the group consisting of Cr, Mn, and Fe, and R is one or more elements selected from the group consisting of Al, Si, Ga, Ge, In, and Sn.

5. The magnetoresistance effect element according to claim 1 , wherein at least one of the ferromagnetic Heusler alloy included in the first ferromagnetic layer and the second ferromagnetic layer includes a Heusler alloy expressed by general formula (1):
Co 2 Q α R β   (1)

where Q is one or more elements selected from a group consisting of Cr, Mn, and Fe, R is one or more elements selected from a group consisting of Al, Si, Ga, Ge, In, and Sn, and 2<α+β<2.6.

6. The magnetoresistance effect element according to claim 1 , wherein the nonmagnetic spacer layer includes the nonmagnetic Fe group Heusler alloy.

7. The magnetoresistance effect element according to claim 6 , wherein the nonmagnetic Heusler alloy has a B2 structure or a L2 1 structure.

8. The magnetoresistance effect element according to claim 7 , wherein at least one of the ferromagnetic Heusler alloy included in the first ferromagnetic layer and the second ferromagnetic layer includes a Heusler alloy expressed by a composition formula of Co 2 QR, Q is one or more elements selected from the group consisting of Cr, Mn, and Fe, and R is one or more elements selected from the group consisting of Al, Si, Ga, Ge, In, and Sn.

9. The magnetoresistance effect element according to claim 6 , wherein at least one of the ferromagnetic Heusler alloy included in the first ferromagnetic layer and the second ferromagnetic layer includes a Heusler alloy expressed by a composition formula of Co 2 QR, Q is one or more elements selected from the group consisting of Cr, Mn, and Fe, and R is one or more elements selected from the group consisting of Al, Si, Ga, Ge, In, and Sn.

Assignees

• Tdk Corp

Inventors

• Nakada Katsuyuki
• INUBUSHI Kazuumi

Classifications

• H01F10/1936

  Half-metallic, e.g. epitaxial CrO2 or NiMnSb films · CPC title

• H10N50/85 Primary

  Materials of the active region · CPC title

• H01F10/3268

  the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn · CPC title

• H01F1/0036

  showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity, (H01F1/153, H01F1/42 and H01F10/00 take precedence; magnetoresistive sensors G01D5/16, G01R33/06; magnetoresistive recording G11B5/39; magnetic-field-controlled resistors H10N50/10) · CPC title

• H01L43/08

  Electricity · mapped topic