Single crystal material and method of forming the same and stacked structure and ceramic electronic component and device

Patent metadata

Field	Value
Publication number	US-10937857-B2
Application number	US-201916541883-A
Country	US
Kind code	B2
Filing date	Aug 15, 2019
Priority date	Feb 14, 2019
Publication date	Mar 2, 2021
Grant date	Mar 2, 2021

Abstract

A stacked structure including: a single crystal substrate and, single crystal material on the single crystal substrate, wherein the single crystal material has a same crystallographic orientation as a crystallographic orientation of the single crystal substrate. Also a method of forming the stacked structure, a ceramic electronic component, and a device.

First claim

What is claimed is:

1. A stacked structure, comprising:
a single crystal substrate, and
a single crystal material on the single crystal substrate, the single crystal material being formed from a plurality of nanosheets,
wherein the single crystal material has a same crystallographic orientation as a crystallographic orientation of the single crystal substrate, and
wherein the single crystal material is a multinary single crystal material comprising at least three elements.

2. The stacked structure of claim 1 , wherein a crystal structure of the single crystal material is identical to a crystal structure of the single crystal substrate.

3. The stacked structure of claim 1 , wherein the single crystal material comprises elements composed of elements of a plurality of nanosheets.

4. The stacked structure of claim 1 , wherein the single crystal material is in a form of a film having a thickness of about 0.5 nanometers to about 100 nanometers.

5. A stacked structure, comprising:
a single crystal substrate, and
a single crystal material on the single crystal substrate, the single crystal material being formed from a plurality of nanosheets,
wherein the single crystal material has a same crystallographic orientation as a crystallographic orientation of the single crystal substrate, and
wherein the nanosheet comprises an exfoliated nanostructure of a layered material, a chalcogenide, a carbon structure, or a heterostructure.

6. The stacked structure of claim 3 , wherein the single crystal material comprises a sintered product of the nanosheets.

7. The stacked structure of claim 5 , wherein the single crystal substrate comprises a metal, a semi-metal, a binary compound, an oxide, a nitride, a sulfide, a phosphide, an arsenide, a carbide, or a combination thereof.

8. The stacked structure of claim 5 , wherein the exfoliated nanostructure of the layered material is an exfoliated nanostructure of a layered perovskite.

9. The stacked structure of claim 7 , wherein the exfoliated structure of the layered material is represented by one of Chemical Formulas 1 to 3 Chemical Formula 1
A (n−1) M n O (3n+1)   Chemical Formula 1

A p M (p−1) O 3p   Chemical Formula 2

M p O (2p+1)   Chemical Formula 3

wherein, in Chemical Formulas 1 to 3,
A is independently at least one of Na, K, Rb, Mg, Ca, Sr, Ba, Bi, Hf, Ag, Cd, Ti, Pb, and lanthanide elements,
M is different from A and is independently at least one Li, Sc, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Zn, Al, Ga, In, Ge, Sn, Sb, Bi, and Te,
n≥1, and p≥1.

10. A stacked structure, comprising:
a single crystal substrate, and
a single crystal material on the single crystal substrate, the single crystal material being formed from a plurality of nanosheets,
wherein the single crystal material has a same crystallographic orientation as a crystallographic orientation of the single crystal substrate, and wherein the single crystal substrate comprises at least one of barium and strontium, and titanium.

11. A ceramic electronic component comprising:
a stacked structure, wherein the stacked structure comprises
a single crystal substrate, and
a single crystal material on the single crystal substrate, the single crystal material being formed from a plurality of nanosheets,

wherein the single crystal material has a same crystallographic orientation as a crystallographic orientation of the single crystal substrate.

12. A device comprising the ceramic electronic component of claim 11 .

13. A single crystal material consisting of:
a product of heat-treating a plurality of nanosheets,
wherein a crystal structure of the single crystal material is different from a crystal structure of the plurality of nanosheets.

14. The single crystal material of claim 13 , wherein the single crystal material consists of elements from the plurality of nanosheets.

15. The single crystal material of claim 13 , wherein the single crystal material comprises at least three elements.

16. The single crystal material of claim 13 , wherein the single crystal material is a form of a film having a thickness of about 0.5 nanometers to about 100 nanometers.

17. A ceramic electronic component comprising the single crystal material of claim 13 .

18. A device comprising the ceramic electronic component of claim 17 .

19. A method of forming a single crystal material, the method comprising
providing a plurality of nanosheets,
disposing the plurality of nanosheets on a single crystal substrate, and
heat-treating to form a single crystal material having a same crystallographic orientation as a crystallographic orientation of the single crystal substrate to form the single crystal material.

20. The method of claim 19 , wherein the disposing of the plurality of nanosheets comprises
coating a nanosheet dispersion comprising the plurality of nanosheets by a Langmuir-Blodgett method, a layer-by-layer method, spin coating, slit coating, bar coating, or dip coating to form a two-dimensional nanosheet monolayer.

21. The method of claim 19 , wherein the heat-treating is performed at a temperature which is greater than a temperature at which the crystal structures of the nanosheets are changed.

22. The method of claim 19 , further comprising annealing after the heat-treating at a temperature which is less than the temperature of the heat-treating.

23. The method of claim 20 , wherein the disposing of the plurality of nanosheets comprises disposing the plurality of two-dimensional nanosheet monolayers a plurality of times.

24. The method of claim 21 , wherein the heat-treating is performed at about 300° C. to about 1800° C.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Hyungjun
• Jung Doh Won
• Kwak Chan
• Kim Ki Hong
• Yang Daejin
• Lee Chang Soo

Classifications

• H01G4/33 Primary

  Thin- or thick-film capacitors {(thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)} · CPC title

• H01G4/10

  Metal-oxide dielectrics {(H01G4/085 takes precedence)} · CPC title

• C04B35/495

  based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates · CPC title

• B32B18/00

  Layered products essentially comprising ceramics, e.g. refractory products · CPC title

• B05D1/20

  substances to be applied floating on a fluid · CPC title