Microfluidic chips and methods of producing microfluidic chips
US-2024351025-A1 · Oct 24, 2024 · US
US10933414B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10933414-B2 |
| Application number | US-201715685095-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 24, 2017 |
| Priority date | Aug 24, 2016 |
| Publication date | Mar 2, 2021 |
| Grant date | Mar 2, 2021 |
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The disclosure relates to microchemical (or microfluidic) apparatus as well as related methods for making the same. The methods generally include partial sintering of sintering powder (e.g., binderless or otherwise free-flowing sintering powder) that encloses a fugitive phase material having a shape corresponding to a desired cavity structure in the formed apparatus. Partial sintering removes the fugitive phase and produces a porous compact, which can then be machined if desired and then further fully sintered to form the final apparatus. The process can produce apparatus with small, controllable cavities shaped as desired for various microchemical or microfluidic unit operations, with a generally smooth interior cavity finish, and with materials (e.g., ceramics) able to withstand harsh environments for such unit operations.
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What is claimed is: 1. A method for forming a microchemical apparatus, the method comprising: (a) providing a first metal oxide powder; (b) placing a first fugitive phase material in the first metal oxide powder, the first fugitive phase material having a geometry corresponding to a negative cavity geometry in the formed microchemical apparatus, and (ii) a surface area of 50% or less of a surface area of a layer of the first metal oxide powder in a plane on which the first fugitive phase material is placed; (c) placing a second metal oxide powder over the first metal oxide powder and over the first fugitive phase material; (d) partially sintering the first metal oxide powder and the second metal oxide powder at a temperature and pressure sufficient (i) to convert the first fugitive phase material to a gaseous material and (ii) to convert the first metal oxide powder and the second metal oxide powder to a porous, partially sintered compact, thereby allowing the gaseous material to escape from an interior volume of the partially sintered compact and forming an interior cavity within the partially sintered compact interior volume having a geometry corresponding to the original first fugitive phase material geometry; (e) optionally machining the partially sintered compact; and (f) fully sintering the partially sintered compact at a temperature and pressure sufficient to form a fully sintered microchemical apparatus comprising the interior cavity; wherein: the microchemical apparatus has a structure adapted to function as a combustor; the microchemical apparatus comprises a plurality of inlet ports, an outlet port, and a combustion area defined by the interior cavity; each of the inlet ports and the outlet port are in fluid communication with the combustion area; and each of the inlet ports and the outlet port are in fluid communication with each other via the combustion area. 2. The method of claim 1 , wherein the first metal oxide powder and the second metal oxide powder substantially do not include a binder phase. 3. The method of claim 1 , wherein the first metal oxide powder and the second metal oxide powder independently have a particle size in a range from 1 nm to 1000 nm. 4. The method of claim 1 , wherein the first metal oxide powder and the second metal oxide powder comprise the same or different ceramic material. 5. The method of claim 1 , wherein the first metal oxide powder and the second metal oxide powder comprise one or more of aluminum oxide, zirconium oxide, hydroxyapatite, and zirconiatungstate. 6. The method of claim 1 , wherein the first fugitive phase material comprises graphite. 7. The method of claim 1 , wherein the first fugitive phase material is in the form of a single piece. 8. The method of claim 1 , wherein the first fugitive phase material has a minimum dimension in a range from 1 μm to 1000 μm. 9. The method of claim 1 , wherein the first fugitive phase material has a minimum dimension in a range from 1 nm to 1000 nm. 10. The method of claim 1 , wherein the first fugitive phase material is substantially free from sharp edges. 11. The method of claim 1 , wherein the first fugitive phase material has a coefficient of thermal expansion of 10 μm/(m*K) or less. 12. The method of claim 1 , wherein partially sintering comprises heating to a temperature in a range from 700° C. to 900° C. 13. The method of claim 1 , wherein fully sintering comprises heating to a temperature in a range from 1100° C. to 2000° C. 14. The method of claim 1 , wherein the fully sintered microchemical apparatus has a density of at least 80% relative to the theoretical density of the first and second metal oxide powders. 15. The method of claim 1 , wherein the interior cavity of the microchemical apparatus has a surface roughness of 20 μm or less. 16. The method of claim 1 , further comprising before partially sintering in part (d): placing a second fugitive phase material in the second metal oxide powder, the second fugitive phase material having a geometry corresponding to a negative cavity geometry in the formed microchemical apparatus; and placing a third metal oxide powder over the second metal oxide powder and over the second fugitive phase material; wherein partially sintering in part (d) further comprises: partially sintering the first, second, and third metal oxide powders at a temperature and pressure sufficient (i) to convert the first and second fugitive phase materials to a gaseous material and (ii) to convert the first, second, and third metal oxide powders to a porous, partially sintered compact, thereby allowing the gaseous material to escape from the partially sintered compact interior volume and forming one or more interior cavities within the partially sintered compact interior volume having a geometry corresponding to the original first and second fugitive phase material geometries. 17. The method of claim 1 , wherein the fully sintered microchemical apparatus comprises: a fully sintered metal oxide body comprising the interior cavity within the body; wherein: the interior cavity has a minimum dimension in a range from 1 μm to 1000 μm; and the interior cavity has a surface roughness of 20 μm or less. 18. The method of claim 17 , wherein the fully sintered metal oxide body has a density of at least 80% relative to the theoretical density of the first and second metal oxide powders. 19. The method of claim 17 , wherein the interior cavity is fully enclosed by the fully sintered metal oxide body. 20. The method of claim 17 , wherein the interior cavity is partially enclosed by the fully sintered metal oxide body. 21. The method of claim 1 , further comprising machining the partially sintered compact to define at least one of the inlet ports and the outlet port. 22. The method of claim 1 , wherein the first fugitive phase material has an exposed edge at an external boundary of the microchemical apparatus that defines at least one of the inlet ports and the outlet port. 23. The method of claim 1 , wherein at least one inlet port is disposed on a first side of the interior cavity and at least one other inlet port is disposed on a second side of the interior cavity. 24. The method of claim 1 , wherein: the microchemical apparatus further comprises a plurality of inlet channels and an outlet channel defined by the interior cavity; each inlet channel provides fluid communication between its corresponding inlet port and the combustion area; and the outlet channel provides fluid communication between the outlet port and the combustion area. 25. The method of claim 1 , wherein the microchemical apparatus comprises a first side and a second side and wherein the combustion area has a longitudinal axis that extends between the first and second sides and wherein the inlet ports are arranged along the longitudinal axis. 26. The method of claim 1 , wherein the first metal oxide powder and the second metal oxide powder comprise the same ceramic material. 27. The method of claim 1 , wherein the first fugitive phase material has a surface area of 5% to 30% of a surface area of a layer of the first metal oxide powder in a plane on which the first fugitive phase material is placed.
using moulds and master templates, e.g. for hot-embossing · CPC title
Refractory metal oxides · CPC title
Cooling rate · CPC title
Pressing at temperatures other than sintering temperatures · CPC title
Linear firing shrinkage · CPC title
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