Schottky barrier diode and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-10930797-B2
Application number	US-201615374468-A
Country	US
Kind code	B2
Filing date	Dec 9, 2016
Priority date	Jul 5, 2016
Publication date	Feb 23, 2021
Grant date	Feb 23, 2021

Abstract

A Schottky barrier diode includes: an n− type layer disposed on a first surface of an n+ type silicon carbide substrate; a p+ type region and a p type region disposed on the n− type layer and separated from each other; an anode disposed on the n− type layer, the p+ type region, and the p type region; and a cathode disposed on a second surface of the n+ type silicon carbide substrate. The p type region is in plural, has a hexagonal shape on the plane, and is arranged in a matrix shape, and the n− type layer disposed between the p+ type region and the p type region has a hexagonal shape on the plane and encloses the p type region.

First claim

What is claimed is:

1. A Schottky barrier diode comprising:
an n− type layer disposed on a first surface of an n+ type silicon carbide substrate;
a p+ type region and a plurality of p type regions disposed on the n− type layer;
an anode disposed on the n− type layer, the p+ type region, and the plurality of p type regions; and
a cathode disposed on a second surface of the n+ type silicon carbide substrate,
wherein each of the plurality of p type regions has a hexagonal shape on a plane, and the plurality of p type regions are arranged in a matrix shape on the plane,
on the plane: the n− type layer comprises a plurality of hexagonal shape portions that are spaced apart from each other and that are disposed between the p+ type region and the plurality of p type regions, the p+ type region is disposed between the plurality of hexagonal shape portions of the n− type layer, and the plurality of hexagonal shape portions of the n− type layer enclose the plurality of p type regions, respectively,
on the plane: the p+ type region is an entirely continuous region completely surrounding the plurality of hexagonal shape portions,
the p+ type region and the plurality of p type regions respectively contact the n− type layer, and
on the plane: an area where the p+ type region and the n− type layer contact each other is wider than an area where the plurality of p type regions and the n− type layer contact each other.

2. The Schottky barrier diode of claim 1 , wherein
a horizontal line, which passes through a center point of each of the plurality of p type regions, does not meet a horizontal line of each of the plurality of p type regions that is adjacent thereto in a column direction on the plane.

3. The Schottky barrier diode of claim 1 , wherein
an ion doping concentration of the p+ type region is higher than an ion doping concentration of the plurality of p type regions.

4. The Schottky barrier diode of claim 3 , wherein
the anode includes a Schottky electrode, and
the cathode includes an ohmic electrode.

5. The Schottky barrier diode of claim 4 , further comprising:
an n type layer disposed between the anode and the n− type layer, and
the ion doping concentration of the n type layer is higher than the ion doping concentration of the n− type layer.

6. The Schottky barrier diode of claim 5 , further comprising
a first trench and a second trench disposed on the n type layer, the first trench and the second trench separated from each other.

7. The Schottky barrier diode of claim 6 , wherein
the p+ type region is disposed under a bottom surface of the first trench, and
each of the plurality of p type regions is disposed under the bottom surface of the second trench.

8. The Schottky barrier diode of claim 7 , wherein
the anode includes:
a first anode disposed inside the first trench and the second trench, and
a second anode disposed on the first anode and the n type layer.

9. A Schottky barrier diode comprising:
an n− type layer disposed on a first surface of an n+ type silicon carbide substrate;
a single p+ type region disposed on the n− type layer;
a plurality of p type regions disposed on the n− type layer and dispersed in the single p+ type region;
an anode disposed on the n− type layer, the single p+ type region, and the plurality of p type regions; and
a cathode disposed on a second surface of the n+ type silicon carbide substrate,
wherein each of the plurality of p type regions has a hexagonal shape on a plane, and the plurality of p type regions are arranged in a matrix shape on the plane,
on the plane: the n− type layer comprises a plurality of hexagonal shape portions that are spaced apart from each other and that are disposed between the single p+ type region and the plurality of p type regions, the single p+ type region is disposed between the plurality of hexagonal shape portions of the n− type layer, and the plurality of hexagonal shape portions of the n− type layer enclose the plurality of p type regions, respectively,
on the plane: the single p+ type region completely surrounds the plurality of hexagonal shape portions,
the single p+ type region and the plurality of p type regions respectively contact the n− type layer, and
on the plane: an area where the single p+ type region and the n− type layer contact each other is wider than an area where the plurality of p type regions and the n− type layer contact each other.

10. The Schottky barrier diode of claim 9 , wherein
a horizontal line, which passes through a center point of each of the plurality of p type regions, does not meet a horizontal line of each of the plurality of p type regions that is adjacent thereto in a column direction on the plane.

Assignees

• Hyundai Motor Co Ltd
• Hyundai Motor Company Ltd

Inventors

• Chun Dae Hwan
• Jung Youngkyun
• JOO Nack Yong
• Park Junghee
• Lee Jong Seok

Classifications

• H10P30/2042

  into crystalline silicon carbide · CPC title

• H10P30/21

  of electrically active species · CPC title

• H10D8/051

  of Schottky diodes · CPC title

• H10D64/64

  Electrodes comprising a Schottky barrier to a semiconductor · CPC title

• H10D62/8325

  Silicon carbide · CPC title