Substrate processing apparatus and control method for a substrate processing apparatus
US-2024120204-A1 · Apr 11, 2024 · US
US10927457B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10927457-B2 |
| Application number | US-201514847487-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 8, 2015 |
| Priority date | Mar 4, 2015 |
| Publication date | Feb 23, 2021 |
| Grant date | Feb 23, 2021 |
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A semiconductor manufacturing apparatus in this embodiment includes a reactor, a pump, an exhaust pipe and a mesh member. The reactor houses a semiconductor substrate to treat the semiconductor substrate. The pump exhausts a gas inside the reactor. The exhaust pipe connects between the reactor and the pump. The mesh member is located at a flow inlet of the pump for the gas or in the exhaust pipe and has a main plane having a plurality of meshes arranged thereon. The mesh member has a protrusion and/or protruding shape projecting upstream of the gas.
Opening claim text (preview).
The invention claimed is: 1. A semiconductor manufacturing apparatus comprising: a reactor that houses a semiconductor substrate to treat the semiconductor substrate; a pump that exhausts a gas inside the reactor; an exhaust pipe that connects between the reactor and the pump; and a mesh member that is located at a flow inlet of the pump for the gas or in the exhaust pipe and is divided into two pieces arranged on different planes separated by a gap in a flowing direction of the gas, each of the two pieces including two mesh parts arranged at angular intervals of ninety degrees in a circumferential direction of the mesh member and separated by gaps in the circumferential direction, the mesh member comprises a plurality of protrusions, the protrusions projecting on an upstream side of each mesh part in the flowing direction of the gas and aligning with the flowing direction of the gas, the protrusions being formed one or more on the outer periphery of each mesh part, and the mesh parts on the different planes are overlapped with each other at end portions thereof and not overlapped at inner areas thereof, when the mesh parts are viewed from the flowing direction of the gas, and the mesh parts have a fan shape when viewed from the flowing direction of the gas. 2. The semiconductor manufacturing apparatus according to claim 1 , wherein the mesh member has a circular shape when viewed from the flowing direction of the gas.
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