Method of manufacturing mold and method of manufacturing polarizer
US-2016114502-A1 · Apr 28, 2016 · US
US10926564B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10926564-B2 |
| Application number | US-201715628083-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 20, 2017 |
| Priority date | Jul 19, 2016 |
| Publication date | Feb 23, 2021 |
| Grant date | Feb 23, 2021 |
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A method of manufacturing an imprint stamp including forming an imprint resist only in a second area of a sample substrate including a first area and the second area, pressing the imprint resist with the imprint stamp and curing the imprint resist, in which the imprint stamp includes a fine protrusion pattern that corresponds to the first area and the second area of the sample substrate, and separating the imprint stamp from the sample substrate such that a portion of the fine protrusion pattern corresponding to the second area is separated from the imprint stamp by the cured imprint resist.
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What is claimed is: 1. A method of manufacturing an imprint stamp, the method comprising: forming an imprint resist only in a second area of a sample substrate, the sample substrate comprising a first area and the second area; pressing the imprint resist with a preliminary imprint stamp and curing the imprint resist, the preliminary imprint stamp comprising a fine protrusion pattern that corresponds to the first area and the second area of the sample substrate; and separating the preliminary imprint stamp from the sample substrate, such that a portion of the fine protrusion pattern corresponding to the second area is separated from the preliminary imprint stamp by the cured imprint resist. 2. The method of claim 1 , wherein the fine protrusion pattern has the same pattern as a wire grid pattern. 3. The method of claim 2 , wherein a pitch of the fine protrusion pattern is 50 nm to 150 nm. 4. The method of claim 2 , wherein the sample substrate comprises a sample pattern in the second area. 5. The method of claim 4 , wherein: the sample substrate comprises a display substrate of a display apparatus; and the sample pattern comprises a black matrix pattern of the display apparatus. 6. The method of claim 5 , wherein a line width of the sample pattern is at least 10 μm. 7. The method of claim 1 , wherein the imprint resist comprises at least one of thermosetting resin and photocurable resin. 8. The method of claim 7 , wherein the fine protrusion pattern of the imprint stamp is formed by curing the at least one of the thermosetting resin and photocurable resin. 9. The method of claim 8 , wherein the imprint resist and the fine protrusion pattern comprise the same material. 10. The method of claim 1 , wherein in the step of separating the preliminary imprint stamp from the sample substrate, a process condition is set such that a bonding force between the cured imprint resist and the fine protrusion pattern is: greater than a releasing force between the cured imprint resist and the fine protrusion pattern; and greater than strength of a structure of the fine protrusion pattern. 11. The method of claim 1 , wherein the imprint resist is formed only in the second area using an inkjet method. 12. The method of claim 11 , wherein the imprint resist contacts the sample substrate. 13. The method of claim 11 , wherein: a sample pattern is formed in the second area of the sample substrate; and the imprint resist is disposed on the sample pattern.
comprising electrically conductive elements, e.g. wire grids, conductive particles · CPC title
Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title
Stamping surfaces impregnated with ink, or made of material leaving a mark after stamping contact · CPC title
Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title
Manufacture or treatment of nanostructures · CPC title
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