Thin film battery, thin film battery manufacturing method and refined microcrystalline electrode manufacturing method

Patent metadata

Field	Value
Publication number	US-10923690-B2
Application number	US-201815865688-A
Country	US
Kind code	B2
Filing date	Jan 9, 2018
Priority date	Oct 17, 2017
Publication date	Feb 16, 2021
Grant date	Feb 16, 2021

Abstract

A refined microcrystalline electrode manufacturing method is provided. The refined microcrystalline electrode manufacturing method includes the following step. First, an active material electrode layer is subjected to a conventional thermal annealing (CTA) process in an oxygen-containing environment at a first temperature interval to form an active material crystallization precursor; the active material crystallization precursor is subjected to a rapid thermal annealing (RTA) process in the oxygen-containing environment at a second temperature interval to form an active material coating layer with uniformly distributed fine microcrystal grains, wherein the temperature range of the second temperature interval is greater than the temperature range of the first temperature interval. In addition, a thin film battery and a thin film battery manufacturing method are also provided.

First claim

What is claimed is:

1. A thin film battery manufacturing method, comprising the steps of:
depositing an active material on a conductive substrate by sputtering to form a first active material electrode layer, wherein the first active material electrode layer is in a solid form;
enabling the first active material electrode layer in the solid form to be subjected to an annealing process, while allowing the annealing process to further include the following steps:
enabling the first active material electrode layer in the solid form to be subjected to a conventional thermal annealing (CTA) process in an oxygen-containing environment at a first temperature interval to form a first active material crystallization precursor; and
enabling the first active material crystallization precursor to be subjected to a rapid thermal annealing (RTA) process in the oxygen-containing environment at a second temperature interval to form a first active material coating layer with uniformly distributed fine microcrystal grains, in a manner that the temperature range of the second temperature interval is greater than the temperature range of the first temperature interval;
forming an electrolyte layer on the first active material coating layer; and
forming an electrode layer on the electrolyte layer while allowing the electrode layer and the first active material coating layer to have opposite polarities.

2. The manufacturing method of claim 1 , wherein the first temperature interval is ranged between 300° C. and 500° C.

3. The manufacturing method of claim 1 , wherein the second temperature interval is ranged between 500° C. and 900° C.

4. The manufacturing method of claim 1 , after the step for forming the first active material coating layer, the method further comprising the following step:
enabling the first active material coating layer to form at least one first protrusion electrode layer.

5. The manufacturing method of claim 1 , before the step for depositing the active material on the conductive substrate, the method further comprises the following steps:
providing a substrate; and
enabling a first collector layer to be formed on the substrate so as to form the conductive substrate.

6. The manufacturing method of claim 5 , wherein the forming of the first collector layer on the substrate further comprises the following step:
forming at least one first collector protrusion on the first collector layer.

7. The manufacturing method of claim 1 , wherein the forming of the electrode layer on the electrolyte layer further comprises the following steps:
forming a second active material coating layer on the electrolyte layer; and
forming a second collector layer on the second active material coating layer.

8. The manufacturing method of claim 7 , before the step for forming the second collector layer on the second active material coating layer, the method further comprises the following step:
forming at least one second collector protrusion on the second collector layer while enabling each second collector protrusion to embed inside the second active material coating layer.

9. The manufacturing method of claim 1 , before the step for forming the first active material coating layer, the method further comprises the following steps:
depositing an active material on the conductive substrate to form a third active material electrode layer; and
enabling the third active electrode layer to be subjected to a conventional thermal annealing (CTA) process in the oxygen-containing environment to form a third active material coating layer with uniformly distributed coarse crystal grains, while enabling the third active material coating layer to be disposed between the conductive substrate and the first active material coating layer.

10. The manufacturing method of claim 9 , wherein the conventional thermal annealing (CTA) process for forming the third active material coating layer is performed in a temperature interval ranged between 500° C. and 900° C.

11. The manufacturing method of claim 9 , after the step for forming the third active material coating layer, the method further comprises the following step:
enabling the third active material coating layer to form at least one third protrusion electrode layer.

12. The manufacturing method of claim 1 , wherein the step for forming the electrolyte layer on the first active material coating layer further comprises the following step:
forming at least one electrolyte protrusion on the electrolyte layer.

13. A refined microcrystalline electrode manufacturing method, comprises the following steps:
enabling an active material electrode layer in a solid form and formed by sputtering to be subjected to a conventional thermal annealing (CTA) process in an oxygen-containing environment at a first temperature interval to form an active material crystallization precursor; and
enabling the active material crystallization precursor to be subjected to a rapid thermal annealing (RTA) process in the oxygen-containing environment at a second temperature interval to form an active material coating layer with uniformly distributed fine microcrystal grains;
wherein the temperature range of the second temperature interval is greater than the temperature range of the first temperature interval.

14. The manufacturing method of claim 13 , wherein the first temperature interval is ranged between 300° C. and 500° C.

15. The manufacturing method of claim 13 , wherein the second temperature interval is ranged between 500° C. and 900° C.

Assignees

• Iner Aec Executive Yuan

Inventors

• Hsueh Tien-Hsiang
• Yu Yuh-Jenq
• Su Chi-Hung
• Jan Der-Jun

Classifications

• H01M10/0486 Primary

  Frames for plates or membranes · CPC title

• H01M50/11

  having a chip structure, e.g. micro-sized batteries integrated on chips · CPC title

• Y02P70/50

  Manufacturing or production processes characterised by the final manufactured product · CPC title

• H01M4/0471

  involving thermal treatment, e.g. firing, sintering, backing particulate active material, thermal decomposition, pyrolysis · CPC title

• H01M10/0436

  Small-sized flat cells or batteries for portable equipment · CPC title