Gate drive circuit

Patent metadata

Field	Value
Publication number	US-10917080-B2
Application number	US-201715474223-A
Country	US
Kind code	B2
Filing date	Mar 30, 2017
Priority date	Mar 30, 2016
Publication date	Feb 9, 2021
Grant date	Feb 9, 2021

Abstract

A gate drive circuit has a capacitor and a gate drive voltage source connected in series with a gate terminal of a voltage-driven switching device. The gate drive source voltage feeds, as a gate drive voltage, a voltage higher than the sum of the voltage applied to a gate-source parasitic capacitance of the switching device when the switching device is in a steady ON state and the voltage applied to, of any circuit component interposed between the gate drive voltage source and the gate terminal of the switching device, a circuit component other than the capacitor (such as an upper transistor forming the output stage of the driver). No other circuit component (such as a resistor connected in parallel with the capacitor) is essential but the capacitor as the sole circuit component to be directly connected to the gate terminal of the switching device.

First claim

What is claimed is:

1. A gate drive circuit, comprising:
a first capacitor and a first gate drive voltage source connected in series with a gate terminal of a switching device of a voltage-driven type, and
a first resistor connected in parallel with the first capacitor, the first resistor being configured to discharge the first capacitor when the switching device is OFF as a first discharger, wherein
the switching device includes a gate-source (emitter) parasitic capacitance and an inner gate resistance,
the first gate drive voltage source is configured to feed, as a first gate drive voltage, a voltage higher than a sum of a power supply voltage applied to the gate-source (emitter) parasitic capacitance of the switching device when the switching device is in a steady ON state and a voltage applied to, of any circuit component interposed between the first gate drive voltage source and the gate terminal of the switching device, a circuit component other than the first capacitor, and wherein
the gate drive circuit further comprises a second resistor connected between a gate and a source (emitter) of the switching device, and wherein
for a resistance value Rg of the first resistor and a resistance value Rgs of the second resistor, a relationship of Rg<Rgs holds, and
right after the switching device turns ON, the first gate drive voltage is applied as a gate-source (emitter) voltage of the switching device, and a voltage across the gate-source (emitter) parasitic capacitance of the switching device rises from a zero value, and
when the switching device reaches the steady ON state, both of the gate-source (emitter) voltage of the switching device and the voltage across the gate-source (emitter) parasitic capacitance of the switching device settle at the power supply voltage.

2. The gate drive circuit of claim 1 , wherein for a capacitance value Cg of the first capacitor, a capacitance value Cgs of the gate-source (emitter) parasitic capacitance observed when the switching device is in the steady ON state, and a resistance value Rgs of the second resistor, a relationship of Cg:(Cg+Cgs)=(Rg∥Rgs):Rg holds.

3. The gate drive circuit of claim 1 , further comprising:
a second gate drive voltage source connected to a first gate drive voltage source side of the first discharger.

4. The gate drive circuit of claim 1 , further comprising:
a second discharger of which a first terminal is connected to the gate terminal of the switching device; and
a second gate drive voltage source connected to a second terminal side of the second discharger.

5. The gate drive circuit of claim 4 , wherein the second discharger includes a second capacitor.

6. The gate drive circuit of claim 4 , wherein the second discharger includes a third resistor.

7. The gate drive circuit of claim 1 , wherein the switching device is a SiC-MOSFET.

Assignees

• Rohm Co Ltd

Inventors

• Yanagi Tatsuya
• Otake Hirotaka
• Sawada Takashi
• Kitagawa Seiya

Classifications

• H03K17/04123 Primary

  in field-effect transistor switches · CPC title

• H10D62/8325

  Silicon carbide · CPC title

• H10D84/144

  in antiparallel diode configurations · CPC title

• H10D30/66

  Vertical DMOS [VDMOS] FETs · CPC title

• H03K17/04 Primary

  Modifications for accelerating switching · CPC title