Microelectronic device substrate formed by additive process
US-2020176251-A1 · Jun 4, 2020 · US
US10916536B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10916536-B2 |
| Application number | US-201916549379-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 23, 2019 |
| Priority date | Aug 27, 2018 |
| Publication date | Feb 9, 2021 |
| Grant date | Feb 9, 2021 |
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An ESD protective device for a MEMS element is described as having at least one first line; at least one n-region connected to the first line; at least one insulating region connected to the n-region; at least one p-region connected to the insulating region; at least one second line connected to the p-region; the n-region, the insulating region, and the p-region being situated on a substrate.
Opening claim text (preview).
What is claimed is: 1. An ESD protective device for an MEMS element, comprising: at least one first line; at least one n-region connected to the first line; at least one insulating region connected to the n-region; at least one p-region connected to the insulating region; at least one second line connected to the p-region, wherein the n-region, the insulating region, and the p-region are on a substrate; wherein a line is connectable to a circuit that is to be protected, as a part of the MEMS element, wherein the p-region is connected to another line via an electrical contact, and wherein the another line is connectable to the circuit, wherein a protective diode is formed below the n-region, and wherein the protective diode is connected in series with an electrical resistor, and wherein the protective diode is connected in a blocking direction between a terminal and the substrate, so that there is essentially no flow of current through the protective diode except for a leakage current. 2. The ESD protective device as recited in claim 1 , wherein a defined number of first lines, n-regions connected to the first lines, insulating regions connected to the n-regions, p-regions connected to the insulating regions, and second lines connected to the p-regions are situated on the substrate. 3. The ESD protective device as recited in claim 1 , wherein the ESD protective device is produced using a MEMS process. 4. A method for producing an ESD protective device for a MEMS element, comprising: providing a first line; providing an n-region connected to the first line; providing an insulating region connected to the n-region; providing a p-region connected to the insulating region; providing a second line connected to the p-region, wherein the n-region, the insulating region, and the p-region are on a substrate; wherein a line is connectable to a circuit that is to be protected, as a part of the MEMS element, wherein the p-region is connected to another line via an electrical contact, and wherein the another line is connectable to the circuit, wherein a protective diode is formed below the n-region, and wherein the protective diode is connected in series with an electrical resistor, and wherein the protective diode is connected in a blocking direction between a terminal and the substrate, so that there is essentially no flow of current through the protective diode except for a leakage current.
Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] · CPC title
Electricity · mapped topic
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