Flattening method and flattening apparatus

Patent metadata

Field	Value
Publication number	US-10916455-B2
Application number	US-201916371796-A
Country	US
Kind code	B2
Filing date	Apr 1, 2019
Priority date	Oct 15, 2007
Publication date	Feb 9, 2021
Grant date	Feb 9, 2021

Abstract

A flattening method, by utilizing the advantages of the CARE method and making up for the disadvantages, can perform removal processing of a surface of a workpiece at a sufficient processing rate and can provide a processed surface having enhanced flatness without leaving damage in the processed surface. A flattening method comprises at least two surface removal steps and at least two cleaning steps, the final surface removal step being a catalyst-referred etching step comprising immersing a workpiece in a processing solution containing at least one of hydrohalic acid, hydrogen peroxide water and ozone water, and bringing a surface of a catalyst platen into contact with or close proximity to a surface to be processed of the workpiece to process the surface, said catalyst platen having in a surface a catalyst selected from the group consisting of platinum, gold, a ceramic solid catalyst, a transition metal, glass, and an acidic or basic solid catalyst.

First claim

What is claimed is:

1. A catalyst-referred etching apparatus for processing a surface of a substrate by bringing the substrate and a catalyst into contact with each other in the presence of a processing solution, the catalyst-referred etching apparatus comprising:
a substrate holder configured to hold the substrate;
a catalyst holder holding the catalyst, the catalyst having at least one through-hole,
the substrate holder and the catalyst holder being configured to be relatively moved while the surface of the substrate and the catalyst are in contact with each other, the at least one through-hole being located at an area where the surface of the substrate and the catalyst are in contact with each other; and
a processing solution supply nozzle coupled to the at least one through-hole to supply the processing solution onto the surface of the substrate through the at least one through-hole of the catalyst.

2. The catalyst-referred etching apparatus according to claim 1 , wherein the at least one through-hole comprises a plurality of through-holes located at equally-spaced lattice positions in the catalyst.

3. The catalyst-referred etching apparatus according to claim 1 , wherein the catalyst comprises a catalyst selected from a group consisting of platinum, gold, a ceramic solid catalyst, a transition metal, glass, and an acidic or basic solid catalyst.

4. The catalyst-referred etching apparatus according to claim 1 , further comprising a rotary joint mounted to the catalyst, the processing solution supply nozzle being coupled to the at least one through-hole of the catalyst via the rotary joint.

5. The catalyst-referred etching apparatus according to claim 1 , wherein the catalyst has a processing solution reservoir formed therein, the processing solution reservoir being in fluid communication with both the at least one through-hole and the processing solution supply nozzle.

Assignees

• Ebara Corp

Inventors

• Yamauchi Kazuto
• Sano Yasuhisa
• Hara Hideyuki
• Murata Junji
• Yagi Keita

Classifications

• H10P95/04

  Planarisation of conductive or resistive materials · CPC title

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P52/402

  of semiconductor materials · CPC title

• H10P90/126 Primary

  by chemical etching · CPC title

• H10P72/0472

  comprising at least one polishing chamber · CPC title