Germanium photodetector coupled to a waveguide

Patent metadata

Field	Value
Publication number	US-10914892-B2
Application number	US-201816164695-A
Country	US
Kind code	B2
Filing date	Oct 18, 2018
Priority date	Oct 18, 2018
Publication date	Feb 9, 2021
Grant date	Feb 9, 2021

Abstract

A photonic device can include an optical detector (e.g., a photodetector) coupled to silicon waveguides. Unlike silicon, germanium is an efficient detector at the wavelength of optical signals typically used for data communication. Instead of directly coupling the waveguide to the germanium, in one embodiment, the waveguide extends below the germanium but is spaced sufficiently away from the germanium so that the optical signal is not transferred. Instead, an optical transfer structure (e.g., a tapered waveguide or an optical grating) is disposed between the germanium and the waveguide. The waveguide first transfers the optical signal into the optical transfer structure which then transfers the optical signal into the germanium.

First claim

We claim:

1. An optical detector, comprising:
a substrate;
germanium disposed on the substrate;
a first waveguide disposed in the substrate and extending underneath the germanium; and
an optical transfer structure disposed between the first waveguide and the germanium, wherein the first waveguide is spaced apart from the optical transfer structure, wherein the optical transfer structure is arranged to transfer an optical signal propagating in the first waveguide into the germanium by redirecting propagation of the optical signal from a first direction of propagation when in the first waveguide to a second direction of propagation towards the germanium, and wherein the germanium is configured to convert the optical signal into an electrical signal.

2. The optical detector of claim 1 , wherein the first waveguide is disposed a first distance from the germanium in a first direction perpendicular to a second direction which the optical signal propagates in the first waveguide and the optical transfer structure is disposed a second distance from the germanium in the first direction, wherein the first distance is greater than the second distance.

3. The optical detector of claim 1 , wherein the germanium comprises a first doped region formed in a first side of the germanium opposite a second side of the germanium facing the substrate, wherein a metal contact couples to the first doped region.

4. The optical detector of claim 3 , wherein at least a portion of the optical transfer structure is disposed underneath the first doped region, wherein the first doped region does not extend to an edge of the germanium.

5. The optical detector of claim 3 , further comprising: a crystalline silicon layer, wherein the second side of the germanium contacts the crystalline silicon layer, wherein the optical transfer structure is disposed between the crystalline silicon layer and the first waveguide.

6. The optical detector of claim 5 , wherein the crystalline silicon layer includes at least one second doped region that includes an opposite type dopant than the first doped region, wherein, when the optical detector is operational, the first and second doped regions are arranged to generate an electrical field in the germanium.

7. The optical detector of claim 1 , wherein the optical transfer structure comprises a transfer waveguide, the transfer waveguide comprising a first taper region overlaying a portion of the first waveguide.

8. The optical detector of claim 7 , wherein the transfer waveguide comprises a second taper region, wherein a dimension of the transfer waveguide increases in the first taper region as the transfer waveguide extends in a first direction while the dimension of the transfer waveguide decreases in the second taper region as the transfer waveguide extends in the first direction.

9. The optical detector of claim 8 , wherein the first and second taper regions are both contained within a boundary of the germanium.

10. The optical detector of claim 7 , wherein a dimension of the first waveguide decreases in the first taper region as the first waveguide extends in a first direction, while the dimension of the transfer waveguide increases in the first taper region as the transfer waveguide extends in the first direction, and wherein the first waveguide terminates underneath the transfer waveguide.

11. The optical detector of claim 1 , wherein the optical transfer structure comprises a grating arranged to diffract the optical signal propagating in the first waveguide towards the germanium.

12. An optical system, comprising:
a substrate;
an optical detector material disposed on the substrate;
a waveguide disposed in the substrate and extending underneath the optical detector material; and
an optical transfer structure disposed between the waveguide and the optical detector material, wherein the waveguide is spaced apart from the optical transfer structure, wherein the optical transfer structure is arranged to transfer an optical signal propagating in the waveguide into the optical detector material by redirecting propagation of the optical signal from a first direction of propagation from the first waveguide to a second direction of propagation towards the optical detector material, and wherein the optical detector material is configured to convert the optical signal into an electrical signal.

13. The optical system of claim 12 , further comprising:
a first metal contact contacting a first side of the optical detector material.

14. The optical system of claim 13 , further comprising: a silicon layer disposed between the optical detector material and the optical transfer structure; and
a second metal contact contacting the silicon layer, wherein, during operation, voltages on the first and second metal contacts generate an electrical field in the optical detector material.

15. The optical system of claim 14 , wherein the waveguide and the optical transfer structure are surrounded by an insulator, wherein the insulator separates the waveguide and the optical transfer structure from the silicon layer.

16. A method, comprising:
transmitting an optical signal in a first waveguide, wherein the first waveguide extends underneath an optical detector material;
transferring the optical signal from the first waveguide into an optical transfer structure, wherein the optical transfer structure is disposed between the first waveguide and the optical detector material;
transferring the optical signal from the optical transfer structure to the optical detector material by redirecting propagation of the optical signal from a first direction of propagation when in the first waveguide to a second direction of propagation towards the optical detector material, wherein a gap is provided between the first waveguide and the optical transfer structure; and
converting the optical signal received in the optical detector material into an electrical signal.

17. The method of claim 16 , wherein the optical transfer structure comprises one of: a tapered waveguide and a grating.

18. The method of claim 16 , wherein the first waveguide is spaced apart from the optical detector material such that the first waveguide is not optically coupled to the optical detector material.

19. The method of claim 16 , wherein the first waveguide terminates within a boundary of the optical detector material.

20. The method of claim 16 , wherein converting the optical signal into the electrical signal comprises:
generating an electrical field in the optical detector material using a first metal contact contacting the optical detector material and a second metal contact contacting a semiconductor layer disposed between the optical detector material and the optical transfer structure.

Assignees

• Cisco Tech Inc

Inventors

• Bayn Igal I
• Patel Vipulkumar
• Gothoskar Prakash B
• Anderson Sean P

Classifications

• H10F77/413

  directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42) · CPC title

• H10F77/122

  comprising only Group IV materials · CPC title

• H10F30/223

  the potential barrier being a PIN barrier · CPC title

• H10F30/2235

  the devices comprising Group IV amorphous materials · CPC title

• G02B2006/12123

  Diode · CPC title