Wafer-based charged particle accelerator, wafer components, methods, and applications

Patent metadata

Field	Value
Publication number	US-10912184-B2
Application number	US-201916538563-A
Country	US
Kind code	B2
Filing date	Aug 12, 2019
Priority date	May 4, 2016
Publication date	Feb 2, 2021
Grant date	Feb 2, 2021

Abstract

A wafer-based charged particle accelerator includes a charged particle source and at least one RF charged particle accelerator wafer sub-assembly and a power supply coupled to the at least one RF charged particle accelerator wafer sub-assembly. The wafer-based charged particle accelerator may further include a beam current-sensor. The wafer-based charged particle accelerator may further include at least a second RF charged particle accelerator wafer sub-assembly and at least one ESQ charged particle focusing wafer. Fabrication methods are disclosed for RF charged particle accelerator wafer sub-assemblies, ESQ charged particle focusing wafers, and the wafer-based charged particle accelerator.

First claim

We claim:

1. A wafer-based charged particle accelerator, comprising:
a first RF charged particle accelerator wafer sub-assembly comprising a wafer, the wafer defining an orifice through which a charged particle beam can travel, the wafer further having electrical isolation between a first electrically conductive electrode disposed on a first side of the wafer and a second electrically conductive electrode disposed on an opposing second side of the wafer to form an electric field interacting with the orifice so that a charged particle beam traveling through the orifice will encounter an electric field generated by the first electrode and second electrode; and
RF voltage-generating electronics disposed on the wafer.

2. The wafer-based charged particle accelerator of claim 1 , further comprising:
a power supply operatively coupled to the first RF charged particle accelerator wafer sub-assembly.

3. The wafer-based charged particle accelerator of claim 1 , wherein the second electrode is in the form of an RF resonator configured as either a) a thin film inductor in series with an air gap capacitor, or b) a coplanar waveguide resonator, so as to transform a low voltage on the wafer to a high voltage on the second side of the wafer.

4. The wafer-based charged particle accelerator of claim 3 , further comprising a beam current-sensor.

5. The wafer-based charged particle accelerator of claim 4 , wherein the beam current-sensor is disposed in the wafer.

6. The wafer-based charged particle accelerator of claim 4 , wherein the beam current-sensor is disposed on another wafer disposed in a drift space.

7. The wafer-based charged particle accelerator of claim 6 , further comprising:
a second RF charged particle accelerator wafer sub-assembly comprising a wafer, the wafer defining an orifice through which a charged particle beam can travel, the wafer further having electrical isolation between a first electrically conductive electrode disposed on a first side of the wafer and a second electrically conductive electrode disposed on an opposing second side of the wafer to form an electric field interacting with the orifice so that a charged particle beam traveling through the orifice will encounter an electric field generated by the first electrode and second electrode; and
at least one ESQ charged particle focusing wafer.

8. The wafer-based charged particle accelerator of claim 7 , wherein the at least one ESQ charged particle focusing wafer comprises an electrically insulative wafer or planar wafer having at least one through-hole, each through-hole providing a beam path to focus the charged particle beam, each through-hole having at least four electrodes disposed at the inner perimeter of the through-hole, where each electrode further comprises one of a) exposed areas of the wafer covered by a conductive material in selected areas to form an electric field distribution to focus the charged particle beam, and b) conductive pillar-like structures coupled to insulating connectors, connected to the wafer, linearly aligned with the RF charged particle accelerator wafer sub-assemblies.

9. The wafer-based charged particle accelerator of claim 8 , wherein the conductive pillar-like structures comprise a solid rod or a hollow cylinder.

10. The wafer-based charged particle accelerator of claim 9 , further comprising a feedback circuit to receive an output from the beam current-sensor and to modify control voltages of the first electrode and the second electrode to focus the charged particle beam.

11. A wafer-based charged particle accelerator for use with a charged particle source, comprising:
at least one RF charged particle accelerator wafer sub-assembly comprising a wafer having electrical isolation between at least a first and a second electrically conductive electrode; and
a RF voltage-generating electronics disposed on the wafer;
wherein at least the first and the second electrode are disposed on respective and opposing first and second sides of the wafer to create an electric field,
wherein the wafer has one or more orifices through which a charged particle beam can travel, encountering the electric field generated by the at least first and second electrode, and
wherein the second electrode is in the form of an RF resonator.

12. The wafer-based charged particle accelerator of claim 11 , further comprising:
a power supply operatively coupled to the at least one RF charged particle accelerator wafer sub-assembly.

13. The wafer-based charged particle accelerator of claim 11 , wherein the RF resonator is configured as a thin film inductor in series with an air gap capacitor to transform a low voltage on the wafer to a high voltage on the second side of the wafer.

14. The wafer-based charged particle accelerator of claim 11 , wherein the RF resonator is configured as a coplanar waveguide resonator to transform a low voltage on the wafer to a high voltage on the second side of the wafer.

15. The wafer-based charged particle accelerator of claim 11 , further comprising a beam current-sensor.

16. The wafer-based charged particle accelerator of claim 15 , further comprising a feedback circuit to receive an output from the beam current-sensor and to modify control voltages of the first electrode and the second electrode to focus the charged particle beam.

17. A RF charged particle accelerator wafer sub-assembly comprising a wafer defining an orifice through which a charged particle beam can travel, the wafer further electrical isolating a first electrode disposed on a first side of the wafer and a second electrode disposed on an opposing second side of the wafer, the first electrode and the second electrode operatively forming an electric field interacting with the orifice so that a charged particle beam traveling through the orifice will encounter an electric field generated by the first electrode and second electrode.

18. The RF charged particle accelerator of claim 17 , further comprising a beam current-sensor.

19. The RF charged particle accelerator of claim 18 , further comprising a feedback circuit to receive an output from the beam current-sensor and to modify control voltages of the first electrode and the second electrode to focus the charged particle beam.

Assignees

• Univ Cornell

Inventors

• Lal Amit
• Schenkel Thomas
• Persaud Arun
• Ji Qing
• Seidl Peter
• Waldron Will
• Ardanuc Serhan
• Kadayra Basavarajappa Vinaya Kumar

Classifications

• H05H13/00 Primary

  Magnetic resonance accelerators; Cyclotrons {(strophotrons, turbine tubes H01J25/62)} · CPC title

• H05H7/02

  Circuits or systems for supplying or feeding radio-frequency energy · CPC title

• H05H7/08

  Arrangements for injecting particles into orbits · CPC title

• H05H2007/025

  Radiofrequency systems · CPC title

• H05H2007/045

  for beam bending · CPC title