Hybrid silicon lasers on bulk silicon substrates

Patent metadata

Field	Value
Publication number	US-10910792-B2
Application number	US-201916431344-A
Country	US
Kind code	B2
Filing date	Jun 4, 2019
Priority date	Sep 30, 2014
Publication date	Feb 2, 2021
Grant date	Feb 2, 2021

Abstract

Hybrid silicon lasers are provided including a bulk silicon substrate, a localized insulating layer that extends on at least a portion of the bulk silicon substrate, an optical waveguide structure on an upper surface of the localized insulating layer. The optical waveguide structure includes an optical waveguide including a silicon layer. A lasing structure is provided on the optical waveguide structure.

First claim

What is claimed is:

1. A method of manufacturing a hybrid silicon laser, the method comprising:
forming a first trench in a part of a bulk silicon substrate;
forming an insulating material layer on an entire surface of the bulk silicon substrate while filling the first trench;
forming a localized insulating layer buried in the first trench by polishing the insulating material layer;
forming a silicon layer on the localized insulating layer and the bulk silicon substrate;
etching the silicon layer to form second trenches spaced apart from each other on the silicon layer remaining on the bulk silicon substrate, and to form a portion of the silicon layer located between the second trenches;
forming an optical waveguide structure including an optical waveguide formed as the silicon layer remaining on the localized insulating layer and an optical guide layer including the second trenches spaced apart from each other;
forming an electric connection layer on the optical waveguide structure;
forming a lasing structure on the electric connection layer;
forming a current injection confinement region in the lasing structure; and
forming an electric terminal that is connected to the lasing structure,
wherein the forming of the lasing structure comprises:
before forming the electric connection layer, further forming an intermediate medium layer on the optical waveguide structure;
forming a preliminary lasing structure on the electric connection layer, the preliminary lasing structure including a light-emitting composite layer including a Group III-V semiconductor gain layer, and a clad layer; and
forming the lasing structure that exposes parts of a surface of the electric connection layer, by etching the preliminary lasing structure, and
wherein the light-emitting composite layer includes a light-emitting layer capable of emitting light, and a first separate confinement heterostructure layer and a second separate confinement heterostructure layer respectively formed on lower and upper sides of the light-emitting layer.

2. The method of claim 1 ,
wherein the electric connection layer is formed of n-type semiconductor.

3. The method of claim 1 ,
wherein a depth of the first trench is less than a thickness of the bulk silicon substrate such that light is not emitted downward through the bulk silicon substrate.

4. The method of claim 1 ,
wherein the localized insulating layer is formed as a material layer having a refractive index lower than a refractive index of the silicon layer included in the optical waveguide.

5. The method of claim 4 ,
wherein the localized insulating layer is formed as a silicon oxide layer (SiO2), a silicon oxynitride layer (SiON), or a silicon nitride layer (SiN).

6. The method of claim 1 ,
wherein the forming of the silicon layer comprises:
forming an amorphous silicon layer on entire surfaces of the localized insulating layer and the bulk silicon substrate; and
forming a crystallized silicon layer by applying energy to the amorphous silicon layer.

7. The method of claim 1 ,
wherein the forming of the optical waveguide structure comprises:
forming a mask pattern on the silicon layer to expose parts of a surface of the silicon layer;
forming the second trenches, the optical waveguide, and the optical guide layer by selectively etching the silicon layer by using the mask pattern as an etch mask; and
removing the mask pattern.

8. The method of claim 7 ,
wherein, when the second trenches are formed by selectively etching the silicon layer, bottoms of the second trenches are formed to be spaced apart from an upper surface of the localized insulating layer.

9. The method of claim 1 ,
wherein a gas layer having a refractive index lower than a refractive index of the silicon layer is formed within the second trenches included in the optical guide layer.

10. The method of claim 1 ,
wherein the second trenches included in the optical guide layer are filled with a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, a polymer layer, or a spin-on-glass layer each having a refractive index lower than a refractive index of the silicon layer.

11. The method of claim 1 ,
wherein a center point of a section of the optical waveguide is deviated from a center point of a section of the localized insulating layer in a lateral direction.

12. The method of claim 1 , further comprising:
forming a current confinement layer provided between the light-emitting layer and the second separate confinement heterostructure layer.

13. A method of manufacturing a hybrid silicon laser, the method comprising:
forming a first trench in a part of a bulk silicon substrate;
forming an insulating material layer on an entire surface of the bulk silicon substrate while filling the first trench;
forming a localized insulating layer buried in the first trench by polishing the insulating material layer;
forming an optical waveguide structure on the localized insulating layer, the optical waveguide structure including an optical waveguide provided as a silicon layer and an optical guide layer located on both sides of the optical waveguide;
forming an intermediate medium layer on the optical waveguide structure;
forming an electric connection layer on the intermediate medium layer;
forming a mesa type or ridge type lasing structure on the electric connection layer, the mesa type or ridge type lasing structure including a clad layer and a light-emitting composite layer including a Group III-V semiconductor gain layer;
forming a current injection confinement region on the mesa type or ridge type lasing structure;
forming a side wall insulating layer on opposite side walls of the mesa type or ridge type lasing structure, wherein the side wall insulating layer is in contact with the electric connection layer, and
forming an electric terminal that is electrically connected to the mesa type or ridge type lasing structure,
wherein the light-emitting composite layer includes a light-emitting layer capable of emitting light, and a first separate confinement heterostructure layer and a second separate confinement heterostructure layer respectively formed on lower and upper sides of the light-emitting layer, and a current confinement layer is further provided between the light-emitting layer and the second separate confinement heterostructure layer.

14. The method of claim 13 , further comprising:
forming a surface insulating layer on the intermediate medium layer.

15. The method of claim 13 , wherein the current injection confinement region is a current confinement impurity region provided in the light-emitting composite layer and the clad layer, and the current confinement impurity region is an ion injection region into which protons are injected.

16. The method of claim 13 , wherein the light-emitting composite layer comprises one of a quantum well and a quantum dot, and a center point of a section of the optical waveguide is deviated from a center point of a section of the localized insulating layer.

17. A method of manufacturing a hybrid silicon laser, the method comprising:
forming a trench in a part of a bulk silicon substrate;
forming an insulating material layer on an entire surface of the bulk silicon substrate while filling the trench;
forming a localized insulating layer buried in the trench by polishing the insulating material layer;
forming a silicon layer on the localized insulating layer and the bulk silicon substrate;
forming an optical waveguide structure including an optical waveguide and an optical guide laye

Assignees

• Samsung Electronics Co Ltd

Inventors

• Shin Dong-Jae
• Kim Dong-Hyun
• Kim Seong-Gu
• Joe In-Sung
• Ha Kyoung-Ho

Classifications

• H01S5/1032 Primary

  Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region · CPC title

• H01S5/141

  using a wavelength selective device, e.g. a grating or etalon (H01S5/146 takes precedence) · CPC title

• H01S5/34306

  emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers · CPC title

• H01S5/227

  Buried mesa structure {; Striped active layer} · CPC title

• G02B2006/12121

  Laser · CPC title