Light emitting display device and method for fabricating the same

Patent metadata

Field	Value
Publication number	US-10910582-B2
Application number	US-201815962088-A
Country	US
Kind code	B2
Filing date	Apr 25, 2018
Priority date	Sep 29, 2017
Publication date	Feb 2, 2021
Grant date	Feb 2, 2021

Abstract

A light emitting display device and a method of manufacturing a light emitting display device, the device including a substrate; a switching element on the substrate; a first electrode connected to the switching element; a second electrode on the first electrode; a light emitting element between the first electrode and the second electrode; and a non-conductive oxide film between the first electrode and the light emitting element.

First claim

What is claimed is:

1. A light emitting display device, comprising:
a substrate;
a switching element on the substrate;
a first electrode connected to the switching element through a contact hole;
a second electrode on the first electrode;
a light emitting element between the first electrode and the second electrode; and
a non-conductive oxide film between the first electrode and the light emitting element, a portion of the non-conductive oxide film being disposed in the contact hole, wherein
an interface between the first electrode and the non-conductive oxide film that is disposed in the contact hole has a concave-convex shape.

2. The light emitting display device as claimed in claim 1 , wherein the non-conductive oxide film contacts an entire surface of the light emitting element that faces the substrate.

3. The light emitting display device as claimed in claim 1 , further comprising a light blocking layer on the substrate, the light blocking layer defining a light emission area of the substrate.

4. The light emitting display device as claimed in claim 3 , wherein the non-conductive oxide film is between the light blocking layer and the substrate.

5. A light emitting display device, comprising:
a substrate;
a switching element on the substrate;
a first electrode connected to the switching element through a contact hole;
a second electrode on the first electrode;
a light emitting element between the first electrode and the second electrode;
a non-conductive oxide film between the first electrode and the light emitting element, a portion of the non-conductive oxide film being disposed in the contact hole; and
a light blocking layer on the substrate, the light blocking layer defining a light emission area of the substrate, wherein
the non-conductive oxide film is between the light blocking layer and the substrate, and
the non-conductive oxide film overlaps an entire surface of the substrate.

6. The light emitting display device as claimed in claim 3 , wherein the non-conductive oxide film has a thickness that is less than a thickness of the light blocking layer.

7. The light emitting display device as claimed in claim 6 , wherein the thickness of the non-conductive oxide film is 0.5 nm to 10 nm.

8. The light emitting display device as claimed in claim 6 , wherein the thickness of the light blocking layer is 0.1 μm to 4 μm.

9. The light emitting display device as claimed in claim 1 , wherein the non-conductive oxide film has a thickness that is less than a thickness of the first electrode.

10. The light emitting display device as claimed in claim 1 , wherein the non-conductive oxide film includes a silicon oxide, an aluminum oxide, a molybdenum oxide, a tungsten oxide, or a siloxane.

11. A method of manufacturing a light emitting display device, the method comprising:
forming a switching element on a substrate;
forming a first electrode connected to the switching element through a contact hole;
forming a non-conductive oxide film on the first electrode, a portion of the non-conductive oxide film being disposed in the contact hole;
forming an insulating layer on the non-conductive oxide film;
forming a photoresist pattern on the insulating layer;
forming a light blocking layer such that the light blocking exposes a portion of the non-conductive oxide film by removing a portion of the insulating layer using the photoresist pattern as a mask;
forming a light emitting element on the portion of the non-conductive oxide film exposed through the light blocking layer; and
forming a second electrode on the light emitting element, wherein
an interface between the first electrode and the non-conductive oxide film that is disposed in the contact hole has a concave-convex shape.

12. The method as claimed in claim 11 , wherein the non-conductive oxide film contacts an entire surface of the light emitting element that faces the substrate.

13. The method as claimed in claim 11 , wherein the non-conductive oxide film overlaps an entire surface of the substrate.

14. The method as claimed in claim 11 , wherein the non-conductive oxide film has a thickness that is less than a thickness of the light blocking layer.

15. The method as claimed in claim 11 , wherein the non-conductive oxide film includes a silicon oxide, an aluminum oxide, a molybdenum oxide, a tungsten oxide, or a siloxane.

16. The method as claimed in claim 11 , wherein:
the non-conductive oxide film has a thickness of 0.5 nm to 10 nm, and
the light blocking layer has a thickness of 0.1 μm to 4 μm.

17. A light emitting display device, comprising:
a substrate;
a switching element on the substrate;
a first electrode connected to the switching element;
a second electrode on the first electrode;
a light emitting element between the first electrode and the second electrode; and
a non-conductive oxide film between the first electrode and the light emitting element, the non-conductive oxide film including:
a first side facing the first electrode; and
a second side facing the light emitting element, wherein
the second side has different shape from the first side, and
a length of the first side is greater than a length of the second side.

18. The light emitting display device as claimed in claim 17 , wherein the first side has a concave-convex shape, and the second side has a planar shape.

Assignees

• Samsung Display Co Ltd

Inventors

• Park Gwuihyun
• Hong Pilsoon
• PARK Chulwon
• JEON Bogeon

Classifications

• H10K50/181

  Electron blocking layers · CPC title

• H10K50/17

  Carrier injection layers · CPC title

• H10D86/423 Primary

  comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO · CPC title

• H10D86/441

  Interconnections, e.g. scanning lines · CPC title

• H10D86/481

  integrated with passive devices, e.g. auxiliary capacitors · CPC title