Doping control of metal nitride films

Patent metadata

Field	Value
Publication number	US-10910263-B2
Application number	US-201916545340-A
Country	US
Kind code	B2
Filing date	Aug 20, 2019
Priority date	Feb 1, 2013
Publication date	Feb 2, 2021
Grant date	Feb 2, 2021

Abstract

Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping.

First claim

What is claimed is:

1. A method for depositing a barrier film, the method comprising:
depositing a metal nitride film on a dielectric film on a substrate surface, wherein the temperature during deposition of the metal nitride film is controlled to control the density of the metal nitride film;
doping the metal nitride film with one or more dopants; and
diffusing one or more of the dopants through the metal nitride film to the dielectric film.

2. The method of claim 1 , wherein the one or more dopants and the dielectric film react to provide a metal oxide film or a metal silicate film.

3. The method of claim 2 , wherein the one or more dopants comprises one or more of Al and Mn and the metal oxide film or metal silicate film comprises one or more of Al 2 O 3 , MnO and MnSiO x .

4. The method of claim 1 , wherein temperature during deposition of the metal nitride film is selected to provide a desired amount of doping for the metal nitride film.

5. The method of claim 1 , wherein the one or more dopants has a concentration in a range of 0.01 to 30 wt. %.

6. The method of claim 1 , wherein the metal nitride film comprises one or more of TaN, TiN and MnN.

7. The method of claim 1 , wherein the metal nitride film is doped with one or more of Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V.

8. The method of claim 1 , wherein the metal nitride film is deposited at a temperature less than or equal to about 350° C.

9. The method of claim 1 , wherein the metal nitride film comprises one or more of MnN doped with Ru, TaN doped with Mn, MnN doped with Cu or combinations thereof.

10. The method of claim 1 , wherein the predetermined film density is less than or equal to about 8.5 g/cm 3 .

11. The method of claim 1 , further comprising exposing the metal nitride film to plasma treatment after doping the metal nitride film.

12. The method of claim 1 , wherein the metal nitride film is deposited via atomic layer deposition.

Assignees

• Applied Materials Inc

Inventors

• Lakshmanan Annamalai
• Sheu Ben-Li
• Wei Guodan
• Lundy Nicole
• Ma Paul F

Classifications

• H10W20/0552

  by diffusing metallic dopants to react with dielectrics · CPC title

• H10P14/432

  using selective deposition · CPC title

• H10W20/0523

  by irradiating with ultraviolet or particle radiation · CPC title

• H10W20/425

  Barrier, adhesion or liner layers · CPC title

• H10W20/076

  in via holes or trenches · CPC title