Optical modulator using phase change material and device including the same

Patent metadata

Field	Value
Publication number	US-10908437-B2
Application number	US-201715674103-A
Country	US
Kind code	B2
Filing date	Aug 10, 2017
Priority date	Aug 10, 2016
Publication date	Feb 2, 2021
Grant date	Feb 2, 2021

Abstract

Provided are optical modulators and devices including the optical modulators. The optical modulator may include an optical modulation layer that includes a phase change material. A first electrode may be provided on a first surface of the optical modulation layer. A second electrode may be provided on a second surface of the optical modulation layer. A first phase controlling layer may be provided, the first electrode being disposed between the first phase controlling layer and the optical modulation layer. A second phase controlling layer may be provided, the second electrode being disposed between the second phase controlling layer and the optical modulation layer. Each of the first and the second phase controlling layers may have an optical thickness corresponding to an odd multiple of λ/4, where λ is a wavelength of incident light to be modulated by the optical modulator. The optical modulator may further include at least one reflective layer. The optical modulation layer may have a thickness of about 10 nm or less. An operating voltage of the optical modulator may be about 10 V or less.

First claim

What is claimed is:

1. An optical modulator comprising:
an optical modulation layer comprising a phase change material;
a first electrode disposed on a first surface of the optical modulation layer;
a second electrode disposed on a second surface of the optical modulation layer;
a first phase controlling layer, the first electrode being disposed between the first phase controlling layer and the optical modulation layer;
a second phase controlling layer, the second electrode being disposed between the second phase controlling layer and the optical modulation layer; and
a first reflective layer, the first phase controlling layer being disposed between the first reflective layer and the first electrode,
wherein a center wavelength of incident light to be modulated by the optical modulator is λ,
wherein each of the first and the second phase controlling layers has an optical thickness corresponding to an odd multiple of λ/4, and
wherein the optical modulator is configured to modulate the incident light by a change in optical properties of the optical modulation layer based on a phase change of the phase change material.

2. The optical modulator of claim 1 , wherein the optical modulation layer has a thickness of 10 nm or less.

3. The optical modulator of claim 1 , wherein the optical modulator is configured to operate at an operating voltage of 10 V or less.

4. The optical modulator of claim 1 , wherein the optical modulator is configured to operate at an operating voltage of 5 V or less.

5. The optical modulator of claim 1 , wherein the phase change material comprises Ge 40 Sb 10 Te 50 .

6. The optical modulator of claim 1 , wherein at least one from among the first and the second electrodes comprises a transparent conductive oxide (TCO).

7. The optical modulator of claim 1 , wherein an overall optical thickness of the optical modulation layer and the first and the second electrodes satisfies a condition of an integer multiple of λ/2.

8. The optical modulator of claim 1 , wherein at least one from among the first and the second phase controlling layers comprises one from among TiO 2 , SiO 2 , SiNx, Al 2 O 3 , AlN, HfO 2 , SiC, and MgO.

9. The optical modulator of claim 1 , further comprising a second reflective layer, the second phase controlling layer being disposed between the second reflective layer and the second electrode,
wherein the first reflective layer comprises a first distributed Bragg reflector (DBR) and the second reflective layer comprises a second DBR.

10. The optical modulator of claim 9 , wherein at least one from among the first DBR and the second DBR has a stacked structure in which a first material layer, which has a first refractive index, and a second material layer, which has a second refractive index that is different from the first refractive index, are alternatingly stacked.

11. The optical modulator of claim 1 , further comprising a substrate that is transparent to incident light,
wherein the first phase controlling layer, the first electrode, the optical modulation layer, the second electrode, and the second phase controlling layer are sequentially stacked on the substrate.

12. The optical modulator of claim 1 , wherein the optical modulator is a transmissive optical modulator using a transmittance change according to the phase change of the phase change material.

13. The optical modulator of claim 1 , wherein a transmittance change amount of the optical modulator is 40% or more.

14. The optical modulator of claim 1 , wherein a demodulation contrast (D.C.) of the optical modulator is 70% or more.

15. An optical apparatus comprising the optical modulator defined in claim 1 .

16. A three-dimensional (3D) image acquiring device comprising:
a light source unit configured to emit light to an object;
an optical modulation unit configured to modulate light reflected from the object and comprising the optical modulator defined in claim 1 ; and
a light detection unit configured to detect light modulated by the optical modulation unit.

17. The optical modulator of claim 1 , wherein the phase change material of the optical modulation layer is a Ge—Sb—Te-based material.

18. The optical modulator of claim 17 , wherein the Ge—Sb—Te-based material is expressed as Ge x Sb y Te z , where x, y, and z are positive integers and x>y, y<z, and x<z.

19. The optical modulator of claim 1 , wherein the first phase controlling layer and the second phase controlling layer are configured to match phases of the incident light.

20. The optical modulator of claim 1 , wherein at least one from among the first phase controlling layer and the second phase controlling layer is a dielectric layer.

21. The optical modulator of claim 1 , wherein the first reflective layer comprises a distributed Bragg reflector (DBR) structure, in which two material layers, which have different refractive indexes from each other, are alternatingly stacked, and
wherein the two material layers comprise different dielectrics selected from a group consisting of TiO2, SiO2, SiNx, Al 2 O 3 , AlN, HfO2, SiC, and MgO.

22. The optical modulator of claim 21 , wherein each of the two material layers has an optical thickness corresponding to an integer multiple of λ/4.

23. An optical modulator comprising:
an optical modulation layer including a phase change material;
a first electrode disposed on a first surface of the optical modulation layer;
a second electrode disposed on a second surface of the optical modulation layer;
a first phase controlling layer, the first electrode being disposed between the first phase controlling layer and the optical modulation layer;
a second phase controlling layer, the second electrode being disposed between the second phase controlling layer and the optical modulation layer; and
a first reflective layer, the first phase controlling layer being disposed between the first reflective layer and the first electrode,
wherein a center wavelength of incident light to be modulated by the optical modulator is λ,
wherein each of the first and the second phase controlling layers has an optical thickness corresponding to an odd multiple of λ/4, and an overall optical thickness of the optical modulation layer and the first and the second electrodes is an integer multiple of λ/2, and
wherein the optical modulator is configured to modulate the incident light by a change in optical properties of the optical modulation layer based on a phase change of the phase change material.

24. The optical modulator of claim 23 , wherein a thickness of the optical modulation layer ranges from 10 nm to 40 nm.

25. The optical modulator of claim 23 , wherein the phase change material comprises Ge 40 Sb 10 Te 50 .

26. The optical modulator of claim 23 , wherein at least one from among the first and the second electrodes comprises a transparent conductive oxide (TCO).

27. The optical modulator of claim 23 , wherein at least one from among the first and the second phase controlling layers comprises one from among TiO 2 , SiO 2 , SiNx, Al 2 O 3 , AlN, HfO 2 , SiC, and MgO.

28. The optical modulator of claim 23 , further comprising a second reflective layer, the second phase controlling layer being disposed between the second reflective layer and the second electrode,
wherein the first reflective layer is a first distributed Bragg reflector (DBR), and
wherein the secon

Assignees

• Samsung Electronics Co Ltd

Inventors

• Na Byunghoon
• Park Yonghwa

Classifications

• G02F2201/346

  distributed (Bragg) reflector · CPC title

• H04B10/548

  Phase or frequency modulation · CPC title

• G02F1/0553

  specially adapted for gating or modulating in optical waveguides · CPC title

• G02F2203/50

  Phase-only modulation · CPC title

• G02F2202/00

  Materials and properties · CPC title