Infrared sensor, near-infrared absorbing composition, cured film, near-infrared absorbing filter, image sensor, camera module, and compound
US-2017012072-A1 · Jan 12, 2017 · US
US10908335B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10908335-B2 |
| Application number | US-201715785925-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 17, 2017 |
| Priority date | May 1, 2015 |
| Publication date | Feb 2, 2021 |
| Grant date | Feb 2, 2021 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A film has a maximum light transmittance value of 20% or lower in a wavelength range of 450 to 650 nm in a film thickness direction, a light transmittance of 20% or lower at a wavelength of 835 nm in the film thickness direction, and a minimum light transmittance value of 70% or higher in a wavelength range of 1000 to 1300 nm in the film thickness direction. A method of forming the film includes forming a first spectrally selective layer and forming a second spectrally selective layer. A kit for forming the film includes a first composition and a second composition.
Opening claim text (preview).
What is claimed is: 1. A film comprising a first spectrally selective layer and a second spectrally selective layer, wherein the first spectrally selective layer and the second spectrally selective layer are directly contacted with each other in the thickness direction of the film, and wherein a maximum value of a light transmittance of the film in a thickness direction in a wavelength range of 450 to 650 nm is 20% or lower, a light transmittance of the film in the thickness direction at a wavelength of 835 nm is 20% or lower, and a minimum value of a light transmittance of the film in the thickness direction in a wavelength range of 1000 to 1300 nm is 70% or higher, and wherein a maximum value of a light transmittance of the first spectrally selective layer in the thickness direction in a wavelength range of 450 to 650 nm is 20% or lower, a minimum value of a light transmittance of the first spectrally selective layer in the thickness direction in a wavelength range of 1000 to 1300 nm is 70% or higher, the second spectrally selective layer includes an infrared absorber having a maximal absorption in a wavelength range of 750 to 950 nm and a resin, a light transmittance of the second spectrally selective layer in the thickness direction at a wavelength of 835 nm is 20% or lower, and a minimum value of a light transmittance of the second spectrally selective layer in the thickness direction in a wavelength range of 1000 to 1300 nm is 70% or higher. 2. The film according to claim 1 , wherein the first spectrally selective layer includes a visible light absorbing coloring material. 3. The film according to claim 2 , wherein the visible light absorbing coloring material includes two or more chromatic colorants. 4. The film according to claim 2 , wherein the visible light absorbing coloring material includes a black colorant. 5. The film according to claim 1 , wherein the first spectrally selective layer includes two or more sublayers. 6. The film according to claim 5 , wherein each of the sublayers includes one or more chromatic colorants, and the first spectrally selective layer includes two or more chromatic colorants as a whole. 7. The film according to claim 5 , wherein at least one of the sublayers includes a black colorant. 8. The film according to claim 1 , wherein the second spectrally selective layer includes a pyrrolopyrrole compound. 9. The film according to claim 8 , wherein the pyrrolopyrrole compound is represented by the following Formula (1), in Formula (1), R 1a and R 1b each independently represent an alkyl group, an aryl group, or a heteroaryl group, R 2 and R 3 each independently represent a hydrogen atom or a substituent, R 2 and R 3 may be bonded to each other to form a ring, R 4 's each independently represent a hydrogen atom, an alkyl group, an aryl group, a heteroaryl group, —BR 4A R 4B , or a metal atom, R 4 may form a covalent bond or a coordinate bond with at least one selected from the group consisting of R 1a , R 1b , and R 3 , and R 4A and R 4B each independently represent a hydrogen atom or a substituent. 10. The film according to claim 1 , which is an infrared transmitting filter. 11. A film forming method for forming the film according to claim 1 , comprising: forming a first spectrally selective layer in which a maximum value of a light transmittance in the thickness direction in a wavelength range of 450 to 650 nm is 20% or lower and in which a minimum value of a light transmittance in the thickness direction in a wavelength range of 1000 to 1300 nm is 70% or higher; and forming a second spectrally selective layer in which a light transmittance in the thickness direction at a wavelength of 835 nm is 20% or lower and in which a minimum value of a light transmittance in the thickness direction in a wavelength range of 1000 to 1300 nm is 70% or higher, wherein the second spectrally selective layer includes an infrared absorber having a maximal absorption in a wavelength range of 750 to 950 nm. 12. The film forming method according to claim 11 , further comprising a patterning, wherein a patterning on the first spectrally selective layer and a patterning on the second spectrally selective layer are separately performed, or a patterning on a laminate of the first spectrally selective layer and the second spectrally selective layer is performed. 13. The film forming method according to claim 12 , wherein the patterning is performed using at least one selected from the group consisting of a pattern forming method using photolithography and a pattern forming method using dry etching. 14. The film forming method according to claim 12 , wherein the patterning is performed at a temperature of 150° C. or lower. 15. A solid image pickup element comprising the film according to claim 1 . 16. An infrared sensor comprising the film according to claim 1 . 17. A solid image pickup element comprising the film according to claim 1 , and a color filter. 18. A solid image pickup element comprising the film according to claim 1 , a color filter, and a microlens disposed on an incidence light side of the film. 19. A solid image pickup element comprising the film according to claim 1 , a color filter, a microlens disposed on an incidence light side of the film, and a planarizing layer. 20. A solid image pickup element comprising the film according to claim 1 , and a color filter disposed on an incidence light side of the film. 21. The film according to claim 1 , wherein the thickness of the first spectrally selective layer is 0.2 to 5 μm, and the thickness of the second spectrally selective layer is 0.2 to 5 μm. 22. A kit for forming a film including a first spectrally selective layer and a second spectrally selective layer, in which the first spectrally selective layer and the second spectrally selective layer are directly contacted with each other in the thickness direction of the film, a maximum value of a light transmittance of the film in a thickness direction in a wavelength range of 450 to 650 nm is 20% or lower, a light transmittance of the film in the thickness direction at a wavelength of 835 nm is 20% or lower, a minimum value of a light transmittance of the film in the thickness direction in a wavelength range of 1000 to 1300 nm is 70% or higher, a maximum value of a light transmittance of the first spectrally selective layer in the thickness direction in a wavelength range of 450 to 650 nm is 20% or lower, a minimum value of a light transmittance of the first spectrally selective layer in the thickness direction in a wavelength range of 1000 to 1300 nm is 70% or higher, the second spectrally selective layer includes an infrared absorber having a maximal absorption in a wavelength range of 750 to 950 nm and a resin, a light transmittance of the second spectrally selective layer in the thickness direction at a wavelength of 835 nm is 20% or lower, and a minimum value of a light transmittance of the second spectrally selective layer in the thickness direction in a wavelength range of 1000 to 1300 nm is 70% or higher, the kit comprising: a first composition for forming the first spectrally selective layer in which a ratio AB of a minimum value A of an absorbance in a wavelength range of 450 to 650 nm to a maximum value B of an absorbance in a wavelength
Related publications grouped by family.
Answers are generated from the same data shown on this page.