Ramp signal generation device and CMOS image sensor including the same

Patent metadata

Field	Value
Publication number	US-10904470-B2
Application number	US-201816189832-A
Country	US
Kind code	B2
Filing date	Nov 13, 2018
Priority date	Mar 13, 2018
Publication date	Jan 26, 2021
Grant date	Jan 26, 2021

Abstract

A ramp signal generation device includes a sampling circuit suitable for sampling a ramp current, which flows on a plurality of ramp current paths, and storing a voltage corresponding to the sampled ramp current; a current maintaining circuit suitable for maintaining the ramp current; a current maintaining/transferring circuit suitable for maintaining and transferring a current corresponding to the voltage stored by the sampling circuit; a selection circuit suitable for selecting a ramp current path of the sampling block and the current maintaining/transferring circuit; and a current-to-voltage converter suitable for converting the current transferred from the current maintaining/transferring circuit and generating therefrom a ramp voltage.

First claim

What is claimed is:

1. A ramp signal generation device, comprising:
a sampling circuit configured to sample a ramp current, which flows on a plurality of ramp current paths, and store a voltage corresponding to the sampled ramp current;
a current maintaining circuit configured to maintain the ramp current;
a current maintaining/transferring circuit configured to maintain and transfer a current corresponding to the voltage stored by the sampling circuit;
a selection circuit configured to select a ramp current path of the sampling block and the current maintaining/transferring circuit; and
a current-to-voltage converter configured to convert the current transferred from the current maintaining/transferring circuit and generating therefrom a ramp voltage.

2. The ramp signal generation device of claim 1 , further comprising:
an output circuit configured to stabilize and output the ramp voltage.

3. The ramp signal generation device of claim 2 , wherein the output circuit includes:
a switch coupled between the current-to-voltage converter and an output node; and
a capacitor coupled between the output node and a ground voltage terminal.

4. The ramp signal generation device of claim 1 , wherein the sampling circuit includes:
a plurality of sampling elements, each configured to sample the ramp current flowing on a corresponding one of the plurality of ramp current paths, and store the voltage corresponding to the sampled ramp current.

5. The ramp signal generation device of claim 4 , wherein each of the plurality of sampling elements includes:
a first PMOS transistor having a source terminal coupled to a power supply voltage terminal, and having a diode-connection structure such that a gate terminal and a drain terminal are coupled to each other;
a capacitor having a first terminal coupled to the power supply voltage terminal and a second terminal coupled to the gate terminal of the first PMOS transistor, and configured to sample the ramp current, which flows on the corresponding ramp current path, and store the voltage corresponding to the sampled ramp current; and
a switch coupled between the drain terminal of the first PMOS transistor and the current maintaining circuit, and configured to switch on or off the ramp current, which flows on the corresponding ramp current path.

6. The ramp signal generation device of claim 5 , wherein the current maintaining/transferring circuit includes
at least one current maintaining/transferring element configured to maintain the current corresponding to the voltage stored in a corresponding sampling block of the sampling circuit; and
a current transferring element configured to transfer the current corresponding to the voltage stored in the corresponding sampling block of the sampling circuit.

7. The ramp signal generation device of claim 6 , wherein the at least one current transferring element includes
a second PMOS transistor having a source terminal coupled to the power supply voltage terminal, a gate terminal coupled to the gate terminal of the first PMOS transistor of the sampling circuit, and a drain terminal coupled to the current-to-voltage converter.

8. The ramp signal generation device of claim 6 , wherein the at least one current transferring element includes
a third PMOS transistor having a source terminal coupled to the power supply voltage terminal, a gate terminal coupled to the selection circuit and the gate terminal of the first PMOS transistor of the sampling circuit, and a drain terminal coupled to the current-to-voltage converter.

9. The ramp signal generation device of claim 8 , wherein the selection circuit includes
a plurality of switches, each having a first terminal coupled to the power supply voltage terminal, and a second terminal coupled between the gate terminal of the first PMOS transistor of the sampling circuit and the gate terminal of the second PMOS transistor of the current maintaining/transferring circuit, and configured to switch on the corresponding ramp current path such that the ramp current flows through the plurality of ramp current paths.

10. A complementary metal-oxide-semiconductor (CMOS) image sensor, comprising:
a pixel array, including pixels, configured to generate a pixel signal corresponding to incident light received at each pixel;
a row decoder coupled to the pixel array and configured to select and control the pixels of the pixel array row by row;
a ramp signal generation device configured to generate a ramp voltage by adjusting an output ratio of a ramp voltage with respect to variation of a ramp current;
a comparison circuit configured to compare the ramp voltage from the ramp signal generation device with the pixel signal received from the pixel array;
a counting circuit configured to perform a counting operation based on the comparison signal;
a memory circuit configured to store information outputted from the counting circuit;
a column read-out circuit configured to output the information stored in the memory circuit; and
a controller configured to control the row decoder, the ramp signal generation device, the comparison circuit, the counting circuit, the memory circuit, and the column read-out circuit.

11. The CMOS image sensor of claim 10 , wherein the ramp signal generation device includes:
a sampling circuit configured to sample a ramp current, which flows on a plurality of ramp current paths, and store a voltage corresponding to the sampled ramp current;
a current maintaining circuit configured to maintain the ramp current;
a current maintaining/transferring circuit configured to maintain and transfer a current corresponding to the voltage stored by the sampling circuit;
a selection circuit configured to select a ramp current path of the sampling block and the current maintaining/transferring circuit; and
a current-to-voltage converter configured to convert the current transferred from the current maintaining/transferring circuit and generate therefrom a ramp voltage.

12. The CMOS image sensor of claim 11 , further comprising:
an output circuit configured to stabilize and output the ramp voltage.

13. The CMOS image sensor of claim 12 , wherein the output circuit includes:
a switch coupled between the current-to-voltage converter and an output node; and
a capacitor coupled between the output node and a ground voltage terminal.

14. The CMOS image sensor of claim 11 , wherein the sampling circuit includes:
a plurality of sampling elements, each configured to sample the ramp current flowing on a corresponding one of the plurality of ramp current paths, and store the voltage corresponding to the sampled ramp current.

15. The CMOS image sensor of claim 14 , wherein each of the plurality of sampling elements includes:
a first PMOS transistor having a source terminal coupled to a power supply voltage terminal, and having a diode-connection structure such that a gate terminal and a drain terminal are coupled to each other;
a capacitor having a first terminal coupled to a power supply voltage terminal and a second terminal coupled to the gate terminal of the first PMOS transistor, and configured to sample the ramp current, which flows on the corresponding ramp current path, and store the voltage corresponding to the sampled ramp current; and
a switch coupled between the drain terminal of the first PMOS transistor and the current maintaining circuit, and configured to switch on or off the ramp current, which flows on the corresponding ramp current path.

16. The CMOS image sensor of claim 15 , wherein the current maintaining/transferring circuit includes
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Assignees

• Sk Hynix Inc

Inventors

• Kim Tae-Gyu

Classifications

• H03K4/02 Primary

  having stepped portions, e.g. staircase waveform · CPC title

• H03K4/023 Primary

  by repetitive charge or discharge of a capacitor, analogue generators · CPC title

• H04N25/78

  Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters · CPC title

• H10F39/8037

  the integrated elements comprising a transistor · CPC title

• H10F39/18

  Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors · CPC title