Power conversion device
US-2017012521-A1 · Jan 12, 2017 · US
US10903757B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10903757-B2 |
| Application number | US-201716637838-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 9, 2017 |
| Priority date | Aug 9, 2017 |
| Publication date | Jan 26, 2021 |
| Grant date | Jan 26, 2021 |
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A power module for a converter, in particular for a multilevel converter. The power module includes a link circuit capacitor, two connection terminals, at least one half-bridge connected in parallel with the link circuit capacitor and having two semiconductor switches, and, for each half-bridge, a bypass diode connected in parallel with a first semiconductor switch of the half-bridge and a load-relief circuit group connected in parallel with the first semiconductor switch. The load-relief circuit group has a load-relief thyristor and a load-relief diode connected in series with the load-relief thyristor.
Opening claim text (preview).
The invention claimed is: 1. A power module for a converter, the power module comprising: an intermediate circuit capacitor; two connection terminals; one half-bridge connected in parallel with said intermediate circuit capacitor and having two semiconductor switches; said two semiconductor switches including a first semiconductor switch having an input side and an output side, each directly electrically connected to a respective one of said connection terminals; a bypass diode connected in parallel with said first semiconductor switch of said half-bridge and a load-relief circuit unit connected in parallel with said first semiconductor switch; and said load-relief circuit unit including a load-relief thyristor, a load-relief diode connected in series with said load-relief thyristor, and a smoothing capacitor connected in parallel with said load-relief thyristor. 2. The power module according to claim 1 , configured for integration in a multi-level converter. 3. The power module according to claim 1 , wherein said bypass diode is a disk diode. 4. The power module according to claim 1 , wherein an anode of said load-relief diode and a cathode of said bypass diode are directly electrically connected to a center tap of said at least one half-bridge, and a cathode of said load-relief diode is directly electrically connected to an anode of said load-relief thyristor. 5. The power module according to claim 4 , wherein the cathode of said load-relief diode is electrically connected, via a connecting resistor, to one electrode of said intermediate circuit capacitor, and the one electrode is connected to said second semiconductor switch. 6. The power module according to claim 1 , wherein said load-relief diode has a cathode that is electrically connected, via a connecting resistor, to one electrode of said intermediate circuit capacitor, and the one electrode is connected to said second semiconductor switch. 7. The power module according to claim 1 , wherein each of said two semiconductor switches comprises a bipolar transistor having an insulated gate electrode and a freewheeling diode connected in an antiparallel arrangement to said bipolar transistor. 8. The power module according to claim 1 , wherein said load-relief diode is a disk diode. 9. The power module according to claim 1 , wherein said load-relief thyristor is a disk thyristor. 10. A modular multi-level converter, comprising a plurality of power modules each according to claim 1 . 11. A power module for a converter, the power module comprising: an intermediate circuit capacitor having first and second electrodes; two connection terminals; at least one half-bridge connected in parallel with said intermediate circuit capacitor and having two semiconductor switches; and for each of said at least one half-bridge, a bypass diode connected in parallel with a first semiconductor switch of said two semiconductor switches of said half-bridge and a load-relief circuit unit connected in parallel with said first semiconductor switch; said load-relief circuit unit including a load-relief thyristor and a load-relief diode connected in series with said load-relief thyristor, said load-relief diode having a cathode that is electrically connected, via a connecting resistor, to said second electrode of said intermediate circuit capacitor, and said second electrode being connected to said second semiconductor switch. 12. The power module according to claim 11 , configured for integration in a multi-level converter. 13. The power module according to claim 11 , wherein: said at least one half-bride is exactly one half-bridge connected in parallel with said intermediate circuit capacitor; said first semiconductor switch has an input side and an output side, each directly electrically connected to a respective one of said connection terminals; and said load-relief circuit unit includes a smoothing capacitor connected in parallel with said load-relief thyristor. 14. The power module according to claim 11 , wherein said bypass diode is a disk diode. 15. The power module according to claim 11 , wherein an anode of said load-relief diode and a cathode of said bypass diode are directly electrically connected to a center tap of said at least one half-bridge, and a cathode of said load-relief diode is directly electrically connected to an anode of said load-relief thyristor. 16. The power module according to claim 11 , wherein each of said two semiconductor switches comprises a bipolar transistor having an insulated gate electrode and a freewheeling diode connected in an antiparallel arrangement to said bipolar transistor. 17. The power module according to claim 11 , wherein said load-relief diode is a disk diode. 18. The power module according to claim 11 , wherein said load-relief thyristor is a disk thyristor. 19. A modular multi-level converter, comprising a plurality of power modules each according to claim 11 .
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