Light receiving/emitting element, solar cell, optical sensor, light emitting diode, and surface emitting laser element

Patent metadata

Field	Value
Publication number	US-10903376-B2
Application number	US-201816102115-A
Country	US
Kind code	B2
Filing date	Aug 13, 2018
Priority date	Aug 9, 2012
Publication date	Jan 26, 2021
Grant date	Jan 26, 2021

Abstract

A light receiving/emitting element 11 includes: a light receiving/emitting layer 21 in which a plurality of compound semiconductor layers are stacked; and an electrode 30 having a first surface 30A and a second surface 30B and made of a transparent conductive material, in which the second surface faces the first surface 30A, and the electrode is in contact, at the first surface 30A, with the light receiving/emitting layer 21. The transparent conductive material contains an additive made of one or more metals, or a compound thereof, selected from the group consisting of molybdenum, tungsten, chromium, ruthenium, titanium, nickel, zinc, iron, and copper, and concentration of the additive contained in the transparent conductive material near an interface to the first surface 30A of the electrode 30 is higher than concentration of the additive contained in the transparent conductive material near the second surface 30B of the electrode 30.

First claim

The application is claimed as follows:

1. A solar cell, comprising:
a light receiving layer in which a plurality of compound semiconductor layers are stacked; and
an electrode having a first surface and a second surface and made of a transparent conductive material, the second surface facing the first surface, and the electrode being in contact, at the first surface, with the light receiving layer,
wherein the transparent conductive material contains an additive including one or more metals, or a compound thereof, selected from the group consisting of molybdenum, tungsten, chromium, ruthenium, titanium, nickel, iron, and copper,
a concentration of the additive contained in the transparent conductive material near an interface to the first surface of the electrode is higher than a concentration of the additive contained in the transparent conductive material near the second surface of the electrode, and
auxiliary electrodes are formed on the second surface of the electrode, a contact layer is formed between the light-receiving layer and the first surface of the electrode, and a portion of the second surface of the electrode, exposed between the auxiliary electrodes, is provided with recesses and projections,
wherein the electrode includes a first layer adjacent to the light receiving layer and a second layer provided on the first layer, and wherein a mean concentration of the additive in the first layer from 5×10 16 cm −3 to 1×10 18 cm −3 .

2. The solar cell according to claim 1 , wherein a reflection prevention film is formed on the second surface of the electrode.

3. The solar cell according to claim 2 , wherein a width of a portion of the second surface of the electrode, exposed between the auxiliary electrodes, is from 145 μm to 285 μm, a thickness of the electrode is from 10 nm to 30 nm, and the reflection prevention film has a stacked structure including a zinc sulfide layer having a thickness from 17 nm to 36 nm and a magnesium fluoride layer having a thickness from 85 nm to 93 nm.

4. The solar cell according to claim 2 , wherein a width of a portion of the second surface of the electrode, exposed between the auxiliary electrodes, is from 145 μm to 285 μm, a thickness of the electrode is from 10 nm to 30 nm, and the reflection prevention film has a stacked structure including a tantalum oxide layer having a thickness from 18 nm to 32 nm and a silicon oxide layer having a thickness from 71 nm to 76 nm.

5. The solar cell according to claim 2 , wherein a width of a portion of the second surface of the electrode, exposed between the auxiliary electrodes, is from 145 μm to 285 μm, a thickness of the electrode is from 10 nm to 25 nm, and the reflection prevention film has a stacked structure including a titanium oxide layer having a thickness from 7 nm to 15 nm, a tantalum oxide layer having a thickness from 14 nm to 34 nm, and a silicon oxide layer having a thickness from 81 nm to 86 nm.

Assignees

• Sony Corp
• Suzhou Inst Nano Tech & Nano Bionics Cas
• Suzhou Inst Of Nano Tech And Nano Bionics

Inventors

• Watanabe Tomomasa
• Yoshida Hiroshi
• Ikeda Masao
• Uchida Shiro
• Nomachi Ichiro
• Arimochi Masayuki
• Yang Hui
• Lu Shulong
• Zheng Xinhe

Classifications

• H10H20/833 Primary

  Transparent materials · CPC title

• H10H20/831

  characterised by their shape · CPC title

• H10H20/825

  containing nitrogen, e.g. GaN · CPC title

• H10H20/824

  comprising only Group III-V materials, e.g. GaP · CPC title

• H10H20/811

  having quantum effect structures or superlattices, e.g. tunnel junctions · CPC title