Capacitor and manufacturing method therefor

Patent metadata

Field	Value
Publication number	US-10903004-B2
Application number	US-201815872239-A
Country	US
Kind code	B2
Filing date	Jan 16, 2018
Priority date	Jul 23, 2015
Publication date	Jan 26, 2021
Grant date	Jan 26, 2021

Abstract

The present invention provides a capacitor including a conductive porous base material with a porous part, a dielectric layer and an upper electrode. The porous part, the dielectric layer, and the upper electrode are stacked on top of one another in this order to define a capacitance formation part. The capacitance format ion part is not present at a lateral end part of the porous part.

First claim

The invention claimed is:

1. A capacitor, comprising:
(A) a supporting layer;
(h) a conductive porous base material including a central portion having a first porosity and a peripheral portion having a second porosity which is lower than the first porosity;
(c) a dielectric layer located on the central portion of the conductive porous base material;
(d) an insulating layer located on the peripheral portion of the conductive porous base material and extending onto an outer peripheral area of the central portion; and
(e) an upper electrode located on and in direct contact with the dielectric layer, the conductive porous base material, at least a portion of the dielectric layer the upper electrode cooperating to form an electrostatic capacitive part;
wherein:
the dielectric layer is not located between the peripheral portion of the conductive porous base material and the insulating layer; and
the insulating layer is located between the upper electrode and the outer peripheral area of the central portion of the conductive porous base material.

2. The capacitor according to claim 1 , wherein the gas-phase method is an atomic layer deposition method.

3. The capacitor according to claim 1 , wherein a thickness of the dielectric layer is 50 nm or less.

4. The capacitor according to claim 1 , wherein the upper electrode comprises a metal, a metal nitride, or a metal oxynitride.

5. The capacitor according to claim 1 , wherein the insulating layer extends into the outer peripheral area of the central portion by a distance of 2 μm or more and 14 μm or less from an outer peripheral end of the central portion of the conductive porous base material.

6. The capacitor according to claim 1 , wherein the central portion has an outward lateral edge and the peripheral portion extends outwardly from the outward lateral edge.

7. The capacitor according to claim 6 , wherein the peripheral portion extends around the entire outward lateral edge of the central portion.

8. The capacitor according to claim 7 , wherein the central portion has pores and the insulating layer extends into the pores of the central portion which are located adjacent to the peripheral portion.

9. The capacitor according to claim 1 , wherein the outer peripheral area of the central portion has pores and the insulating layer extends into the pores of the outer peripheral area of central portion.

10. The capacitor according to claim 1 , wherein the dielectric layer extends into pores in the central portion of the conductive porous base material.

11. The capacitor according to claim 1 , wherein an outer periphery of the electrostatic capacitive part ends at the insulating layer.

12. The capacitor according to claim 1 , wherein the insulating layer extends into pores located in the outer peripheral area of the central portion of the conductive porous base material.

13. A capacitor, comprising:
(a) a supporting layer;
(b) a conductive porous base material including a central portion having a first porosity and a peripheral portion having a second porosity which is lower than the first porosity;
(c) a dielectric layer located on the central portion of the conductive porous base material;
(d) an insulating layer located on the peripheral portion of the conductive porous base material and extending onto an outer peripheral area of the central portion, the insulating layer extending onto the outer peripheral area of the central portion of the conductive porous base material by a covering distance of between 5 μm or more and 50 μm or less; and
(e) an upper electrode located on and in direct contact with the dielectric layer, the conductive porous base material, at least a portion of the dielectric layer the upper electrode cooperating to form an electrostatic capacitive part, wherein the dielectric layer is not located between the peripheral portion of the conductive porous base material and the insulating layer;
wherein a ratio of the covering distance of the insulating layer to a thickness of the central portion of the conductive porous base material is 0.125 or more and 1.25 or less.

14. The capacitor according to claim 13 wherein the dielectric layer and the upper electrode are formed by a gas-phase method.

15. The capacitor according to claim 14 , wherein the gas-phase method is an atomic layer deposition method.

16. The capacitor according to claim 13 , wherein a thickness of the dielectric layer is 50 nm or less.

17. The capacitor according to claim 13 , wherein the upper electrode comprises a metal, a metal nitride, or a metal oxynitride.

18. The capacitor according to claim 13 , wherein the insulating layer extends into the outer peripheral area of the central portion by a distance of 2 μm or more and 14 μm or less from an outer peripheral end of the central portion of the conductive porous base material.

19. The capacitor according to claim 13 , wherein the central portion has an outward lateral edge and the peripheral portion extends outwardly from the outward lateral edge.

20. The capacitor according to claim 19 , wherein the peripheral portion extends around the entire outward lateral edge of the central portion.

21. The capacitor according to claim 20 , wherein the central portion has pores and the insulating layer extends into the pores of the central portion which are located adjacent to the peripheral portion.

22. The capacitor according to claim 13 , wherein the outer peripheral area of the central portion has pores and the insulating layer extends into the pores of the outer peripheral area of central portion.

23. The capacitor according to claim 13 , wherein the dielectric layer extends into pores in the central portion of the conductive porous base material.

24. The capacitor according to claim 13 , wherein an outer periphery of the electrostatic capacitive part ends at the insulating layer.

25. The capacitor according to claim 13 , wherein the insulating layer extends into pores located in the outer peripheral area of the central portion of the conductive porous base material.

26. A capacitor, comprising:
(a) a supporting layer;
(b) a conductive porous base material including a central portion having a first porosity and a peripheral portion having a second porosity which is lower than the first porosity;
(c) a dielectric layer located on the central portion of the conductive porous base material;
(d) an insulating layer located on the peripheral portion of the conductive porous base material and extending onto an outer peripheral area of the central portion by a distance of between 5 μm or more and 50 μm or less, wherein a ratio of the distance that the insulating layer extends into the outer peripheral area of the central portion to a thickness of the central portion of the conductive porous base material is 0.125 or more and 1.25 or less; and
(e) an upper electrode located on and in direct contact with the dielectric layer but not being present between the conductive porous base material and the insulating layer, the conductive porous base material, the dielectric layer and the upper electrode cooperating to form an electrostatic capacitive part.

Assignees

• Murata Manufacturing Co

Inventors

• Aoki Kensuke

Classifications

• H01G4/33 Primary

  Thin- or thick-film capacitors {(thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)} · CPC title

• H01G9/032

  Inorganic semiconducting electrolytes, e.g. MnO2 · CPC title

• H01G4/085

  Vapour deposited · CPC title

• H01G4/10

  Metal-oxide dielectrics {(H01G4/085 takes precedence)} · CPC title

• H01G4/01

  Form of self-supporting electrodes · CPC title